A Theoretical Study of Dislocation Formation at Surfaces in Covalent Materials: Effect of Step Geometry and Reactivity
2005 ◽
Vol 108-109
◽
pp. 193-198
Keyword(s):
Atomistic simulations using both semi-empirical potential and first principles calculation have been performed to study the initiation of plasticity near surface steps in silicon. A comparison of both techniques on a prototypic case shows qualitative and quantitative agreement. Then each method has been used to analyze in detail some characteristics of the surface step: the step geometry thanks to semi-empirical potential calculations, and the step reactivity with ab initio techniques.
2020 ◽
Vol 1445
◽
pp. 012008
Keyword(s):
2013 ◽
Vol 740-742
◽
pp. 455-458
◽
2017 ◽
Vol 31
(09)
◽
pp. 1750080
◽
2001 ◽
Vol 15
(28n30)
◽
pp. 3821-3824
1981 ◽
Vol 42
(C6)
◽
pp. C6-625-C6-627
◽