On the Influence of Illumination During Ion Damage Defect Anneal of Silicon

1995 ◽  
Vol 396 ◽  
Author(s):  
A. Tanabe ◽  
S. Ashok
Keyword(s):  
Electron Cyclotron Resonance ◽  
Deep Level ◽  
Hydrogen Plasma ◽  
Minor Role ◽  
Extended Defects ◽  
Rapid Thermal Anneal ◽  
Thermal Generation ◽  
Ion Damage ◽  
Transient Spectroscopy ◽  
A Minor

AbstractAn exploratory deep level transient spectroscopy (DLTS) study on the possible role of illumination during thermal annealing has been carried out on Si with extended defects generated by Ar implantation and electron cyclotron resonance (ECR) hydrogen plasma. Experiments with rapid thermal anneal (RTA) using quartz-halogen lamps show only a minor role for illumination on anneal of defects generated by Ar ion damage as well as thermal generation of defects under post-hydrogenation anneal. However, significant differences are evident relative to conventional furnace anneal and it appears likely that recombination-assisted defect reactions may be quite significant in Si processing when high intensity sources such as arc lamps are adapted in RTA systems.

scholarly journals Impact of Hydrogenation on Electrical Properties of NiSi2 Precipitates in Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 279-284 ◽  
Author(s):  
O.F. Vyvenko ◽  
N.V. Bazlov ◽  
M.V. Trushin ◽  
A.A. Nadolinski ◽  
Michael Seibt ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Hydrogen ◽  
Deep Level ◽  
Hydrogen Plasma ◽  
Extended Defects ◽  
Transient Spectroscopy ◽  
P Type ◽  
Plasma Hydrogenation ◽  
Type Sample

Influence of annealing in molecular hydrogen as well as of treatment in hydrogen plasma (hydrogenation) on the electrical properties of NiSi2 precipitates in n- and p-type silicon has been studied by means of deep level transient spectroscopy (DLTS). Both annealing and hydrogenation gave rise to noticeable changes of the shape of the DLTS-peak and of the character of its dependence on the refilling pulse duration that according to [1] allows one to classify the electronic states of extended defects as “band-like” or “localized”. In both n- and p-type samples DLTS-peak in the initial as quenched samples showed bandlike behaviour. Annealing or hydrogenation of n-type samples converted the band-like states to the localised ones but differently shifted the DLTS-peak to higher temperatures. In p-type samples, the initial “band-like” behaviour of DLTS peak remained qualitatively unchanged after annealing or hydrogenation. A decrease of the DLTS-peak due to precipitates and the appearance of the peaks due to substitutional nickel and its complexes were found in hydrogenated p-type sample after removal of a surface layer of 10-20µm.

ECR Hydrogen Plasma Treatment of Si: Defect Activation Under Thermal Anneal

1995 ◽  
Vol 378 ◽  
Author(s):  
C. W. Nam ◽  
S. Ashok
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Electron Cyclotron Resonance ◽  
Deep Level ◽  
Hydrogen Plasma ◽  
Schottky Diodes ◽  
Plasma System ◽  
Carrier Trap ◽  
Transient Spectroscopy ◽  
Short Time ◽  
Trap Levels

AbstractSi wafers subject to short-time (4–12 min.), low-temperature atomic hydrogen cleaning in an electron cyclotron resonance (ESR) plasma system have been annealed subsequently in the temperature range 300–750 °C for 20 mins. While only a small broad peak is seen immediately after hydrogenation, several pronounced and distinct majority carrier trap levels show up in deep level transient spectroscopy (DLTS) measurements of subsequently fabricated Schottky diodes on samples annealed at 450 °C and above. The concentrations of these deep levels reach a maximum at anneal temperatures around 500 °C and drop substantially beyond 750 °C. This phenomenon appears to be unrelated to the presence of oxygen in Si and is of potential importance in silicon processing technology.

scholarly journals Radiation-produced defects in germanium: experimental data and models of defects

2017 ◽  
Vol 51 (12) ◽  
pp. 1632
Author(s):  
V.V. Emtsev ◽  
D.S. Poloskin ◽  
G.A. Oganesyan ◽  
V.V. Kozlovski
Keyword(s):  
Experimental Data ◽  
Defect Formation ◽  
Deep Level ◽  
Minor Role ◽  
Radiation Defects ◽  
Electrical Measurements ◽  
Group V ◽  
Before And After ◽  
Transient Spectroscopy ◽  
A Minor

The problem of radiation-produced defects in n-Ge before and after n-> p conversion is discussed in the light of electrical data obtained by means of Hall effect measurements as well as Deep Level Transient Spectroscopy. The picture of the dominant radiation defects in irradiated n-Ge before n-> p conversion appears to be complicated, since they turn out to be neutral in n-type material and unobserved in the electrical measurements. It is argued that radiation-produced acceptors at ~ EC-0.2 eV previously ascribed to vacancy-donor pairs (E-centers) play a minor role in the defect formation processes under irradiation. Acceptor defects at ~ EV+0.1 eV are absolutely dominating in irradiated n-Ge after n-> p conversion. All the radiation defects under consideration were found to be dependent on the chemical group-V impurities. Together with this, they are concluded to be vacancy-related, as evidenced positron annihilation experiments. A detailed consideration of experimental data on irradiated n-Ge shows that the present model of radiation-produced defects adopted in literature should be reconsidered. DOI: 10.21883/FTP.2017.12.45178.8599

Conductance Transients Study of Slow Traps in Al/SiNx:H/Si and Al/SiNx:H/InP Metal-Insulator-Semiconductor Structures

1997 ◽  
Vol 500 ◽  
Author(s):  
S. Dueñas ◽  
R. Peláez ◽  
E. Castán ◽  
J. Barbolla ◽  
I. Mártil ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Electron Cyclotron Resonance ◽  
Deep Level ◽  
Perfect Agreement ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Interfaces ◽  
Interfacial Defects ◽  
Transient Spectroscopy ◽  
Resonance Plasma

ABSTRACTWe have obtained Al/SiNx:H/Si and Al/SiNx:H/InP Metal-Insulator-Semiconductor devices by directly depositing silicon nitride thin films on silicon and indium phosphide wafers by the Electron Cyclotron Resonance Plasma method at 200°C. The electrical properties of the structures were first analyzed by Capacitance-Voltage measurements and Deep-Level Transient Spectroscopy (DLTS). Some discrepancies in the absolute value of the interface trap densities were found. Later on, Admittance measurements were carried out and room and low temperature conductance transients in the silicon nitride/semiconductor interfaces were found. The shape of the conductance transients varied with the frequency and temperature at which they were obtained. This behavior, as well as the previously mentioned discrepancies, are explained in terms of a disorder-induced gap-state continuum model for the interfacial defects. A perfect agreement between experiment and theory is obtained proving the validity of the model.

Electrical Properties of Clustered and Precipitated Iron in Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 109-114
Author(s):  
R. Khalil ◽  
Vitaly V. Kveder ◽  
Wolfgang Schröter ◽  
Michael Seibt
Keyword(s):  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Iron Silicide ◽  
Electronic States ◽  
Moderate Temperature ◽  
Extended Defects ◽  
Characteristic Features ◽  
Transient Spectroscopy ◽  
The Stability

Deep electronic states associated with iron silicide precipitates have been studied by means of deep-level transient spectroscopy. The observed spectra show the characteristic features of bandlike states at extended defects. From the stability of the states on annealing at moderate temperature they are tentatively attributed to precipitate-matrix interfaces.

Electrical and Structural Properties of MeV Si+ Ion Implantation in Silicon

1995 ◽  
Vol 378 ◽  
Author(s):  
Aditya Agarwal ◽  
S. Koveshnikov ◽  
K. Christensen ◽  
G. A. Rozgonyi
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Structural Defects ◽  
Extended Defects ◽  
Device Layer ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Si Ion Implantation

AbstractThe electrical properties of residual MeV ion implantation damage in Si after annealing from 600 to 1100°C for 1 hour have been investigated using Deep Level Transient Spectroscopy, Capaciatance-Voltage, and Current-Voltage measurements. These data have been correlated with structural defects imaged by Transmission Electron Microscopy. It is shown that at least 4 deep levels are associated with the buried layer of extended defects after annealing at 800, 900, 1000 and 1100°C. Additionally, for the wafer annealed at 800°C at least 5 more deep level centers are present in the device layer above the buried defects.

An Assessment of ECR Argon Plasma Etching Damage on Si and SiO2 Interfaces

1992 ◽  
Vol 279 ◽  
Author(s):  
C. W. Nam ◽  
S. Ashok ◽  
W. Tsai ◽  
M. E. Day
Keyword(s):  
Electron Cyclotron Resonance ◽  
Deep Level ◽  
Argon Plasma ◽  
Native Oxide ◽  
Mos Capacitors ◽  
Thermal Oxide ◽  
Oxide Etching ◽  
Order Of Magnitude ◽  
Low Levels ◽  
Transient Spectroscopy

ABSTRACTElectron cyclotron resonance (ECR) argon plasma has been used (to etch the native oxide on Si and thermal SiO2. The Schottky barrier height modification on both n- and p-Si has been studied as a function of substrate bias and etch time. Deep Level Transient Spectroscopy (DLTS) measurements show clear peaks on both p- and n-Si, but wish low levels of trap concentrations (1012-1013cm−3), and decreasing with depth from the surface. The effects of thermal oxide etching on the Si/SiO2 interface have been estimated with MOS capacitors. Negative flat-voltage shift is observed after argon plasma exposure, which removes the thermal oxide at a rate of over 100 Å/min at 50 V bias. C-V measurements show an order of magnitude increase in interface trap density.

Characterisation of the Subthreshold Damage in MeV Ion Implanted p Si

1998 ◽  
Vol 510 ◽  
Author(s):  
Shabih Fatima ◽  
Jennifer Wong-Leung ◽  
John Fitz Gerald ◽  
C. Jagadish
Keyword(s):  
Point Defects ◽  
Deep Level Transient Spectroscopy ◽  
Damage Evolution ◽  
Peak Concentration ◽  
Deep Level ◽  
Extended Defects ◽  
Transmission Electron ◽  
Transient Spectroscopy ◽  
P Type ◽  
Dlts Spectra

AbstractSubthreshold damage in p-type Si implanted and annealed at elevated temperature is characterized using deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). P-type Si is implanted with Si, Ge and Sn with energies in the range of 4 to 8.5 MeV, doses from 7 × 1012to 1×1014cm−2and all annealed at 800°C for 15 min. For each implanted specie, DLTS spectra show a transition dose called threshold dose above which point defects transform in to extended defects. DLTS measurements have shown for the doses below threshold, a sharp peak, corresponding to the signature of point defects and for doses above threshold a broad peak indicating the presence of extended defects. This is found to be consistent with TEM analyses where no defects are seen for the doses below threshold and the presence of extended defects for the doses above threshold. This suggests a defect transformation regime where point defects present below threshold are acting like nucleating sites for the extended defects. Also the mass dependence on the damage evolution has been observed, where rod-like defects are observed in the case of Si and (rod-like defects and loops) for Ge and Sn despite the fact that peak concentration of vacancies for Ge and Sn are normalized to the peak number of vacancies for Si.

Effect of Hydrogenation on the Electrical and Optical Properties of GaSb

1995 ◽  
Vol 396 ◽  
Author(s):  
P.S. Dutta ◽  
H.L. Bhat ◽  
Vikram Kumar
Keyword(s):  
Gallium Antimonide ◽  
Deep Level ◽  
Hydrogen Plasma ◽  
Defect Layer ◽  
Optical Measurements ◽  
Extended Defects ◽  
Capacitance Voltage ◽  
Bulk Single Crystals ◽  
Shallow Acceptors ◽  
Thermal Stability Of

AbstractThe effect of hydrogen plasma treatment on the optical and electrical properties of Gallium Antimonide bulk single crystals is presented. Plasma exposure gives rise to a layer of defects on the surface. These defects introduce multiple trap levels in the band gap from which a slow emission of carriers is observed during the capacitance - voltage measurements. On removal of the defect layer by controlled etching, the effects of hydrogen passivation are seen. The results of optical measurements indicate that passivation of shallow acceptors is more efficient than that of the donors and in general the passivation efficiency depends on the doping level. Passivation of deep levels and extended defects like grain boundaries and dislocations has also been observed. The thermal stability of the passivated deep level and extended defects is higher than that of the shallow level.

Electronic States of Grain Boundaries in Bicrystal Silicon

1982 ◽  
Vol 14 ◽  
Author(s):  
C. M. Shyu ◽  
L. J. Cheng ◽  
K. L. Wang
Keyword(s):  
Density Of States ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electronic States ◽  
Boundary Plane ◽  
Tilt Boundary ◽  
Electrical Measurements ◽  
Transient Spectroscopy ◽  
A Minor ◽  
P Type

ABSTRACTElectronic states at a 20° symmetrical(100) tilt boundary in p-type silicon were studied using deep level transient spectroscopy (DLTS) and other electrical measurements. The data can be explained with a model in which the local barrier height at the grain boundary varies on a scale much smaller than the boundary plane (∼I mm2) under study. Based on a relationship between the carrier capture cross section and energy level deduced from the experimental data, we have been able to calculate the distribution of the density of states in the energy bandgap at the boundary, which contains two groups of continuously distributed states; a major one whose density of states increases monotonically with the position of the state from the valance band, and a minor narrow one whose density of states is centered at Ev,+0.20 eV.

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