Successive Magnetic Transitions on Single Crystal Cu3(OH)4SO4

2011 ◽  
Vol 170 ◽  
pp. 194-197
Author(s):  
Shigeo Hara ◽  
Hirohiko Sato

Cu3(OH)4SO4, a parallel Cu (S = 1/2) triple chain system, is an interesting magnet because an idle-spin state is expected on the central chain. We have succeeded in growing high-quality single crystals of Cu3SO4(OH)4 by a hydrothermal method from copper sulfate and copper hydroxide. We measured field dependence of the magnetization on a single crystal under various directions of magnetic field up to 7 T. We found a clear magnetic anisotropy and confirmed that the existence of the easy axis lies in the ac plane. Under magnetic fields parallel to the c-axis and the a-axis at 2.5 K, we observed field-induced successive magnetic transitions. In the case of B//c, two anomalies of the magnetization are observed at 0.9 and 1.7 T, On the other hand, there are broad anomalies in the magnetization at 3.7 and 5.6 T in the case of B//a.

2008 ◽  
Vol 52 ◽  
pp. 199-203 ◽  
Author(s):  
Takashi Fukuda ◽  
Tomoyuki Kakeshita

We have investigated the martensitic transformation behavior in a single crystal of Ni2MnGa under various magnetic field. The single crystal used in the present study exhibits an intermediate phase (I-phase) transformation at TI = 250 K and a martensitic transformation at TM = 202 K. Since the martensite phase (M-phase) of Ni2MnGa has a large magnetocrystalline anisotropy, the effect of magnetic field depends significantly on the direction of magnetic field. We have measured the reverse (i.e., M-phase to I-phase) transformation start temperature As from a single variant state to examine the effect of magnetic field because the forward (I-phase to M-phase) transformation usually forms a multivariant state of the M-phase. When the magnetic field is applied parallel to the easy axis, As increases linearly with increasing magnetic field. On the other hand, when the magnetic field direction is not parallel to the easy axis, As decreases in a low field region and then increases on further increasing the magnetic field. Such behavior of magnetic field dependencies of As are quantitatively explained by the Clausius-Clapeyron equation, where we have assumed that the magnetic field dependence of As agrees with the magnetic field dependence of the equilibrium temperature.


2021 ◽  
Vol 3 (4) ◽  
Author(s):  
Yogesh Kumar ◽  
Rabia Sultana ◽  
Prince Sharma ◽  
V. P. S. Awana

AbstractWe report the magneto-conductivity analysis of Bi2Se3 single crystal at different temperatures in a magnetic field range of ± 14 T. The single crystals are grown by the self-flux method and characterized through X-ray diffraction, Scanning Electron Microscopy, and Raman Spectroscopy. The single crystals show magnetoresistance (MR%) of around 380% at a magnetic field of 14 T and a temperature of 5 K. The Hikami–Larkin–Nagaoka (HLN) equation has been used to fit the magneto-conductivity (MC) data. However, the HLN fitted curve deviates at higher magnetic fields above 1 T, suggesting that the role of surface-driven conductivity suppresses with an increasing magnetic field. This article proposes a speculative model comprising of surface-driven HLN and added quantum diffusive and bulk carriers-driven classical terms. The model successfully explains the MC of the Bi2Se3 single crystal at various temperatures (5–200 K) and applied magnetic fields (up to 14 T).


2019 ◽  
Vol 7 (6) ◽  
pp. 1584-1591 ◽  
Author(s):  
Yunxia Zhang ◽  
Yucheng Liu ◽  
Zhuo Xu ◽  
Haochen Ye ◽  
Qingxian Li ◽  
...  

A centimeter-sized high-quality two-dimensional (PEA)2PbBr4 single crystal was prepared, which exhibited superior UV photo-response performance.


1988 ◽  
Vol 144 ◽  
Author(s):  
K. C. Garrison ◽  
C. J. Palmstrøm ◽  
R. A. Bartynski

ABSTRACTWe have demonstrated growth of high quality single crystal CoGa films on Ga1−xAlxAs. These films were fabricated in-situ by codeposition of Co and Ga on MBE grown Ga1−xAlxAs(100) surfaces. The elemental composition of the films was determined using Rutherford Backscattering (RBS) and in-situ Auger analysis. The structural quality of the films' surfaces was studied using RHEED (during deposition) and LEED (post deposition). RBS channeling was used to determine the bulk crystalline quality of these films.For ∼500 Å CoGa films grown at ∼450°C substrate temperature, channeling data showed good quality epitaxial single crystals [χmin ∼7%] with minimal dechanneling at the interface.


1991 ◽  
Vol 180 (5-6) ◽  
pp. 394-400 ◽  
Author(s):  
M. Saint-Paul ◽  
H. Noël ◽  
J.C. Levet ◽  
M. Potel ◽  
P. Gougeon

2015 ◽  
Vol 112 (33) ◽  
pp. 10310-10315 ◽  
Author(s):  
Long You ◽  
OukJae Lee ◽  
Debanjan Bhowmik ◽  
Dominic Labanowski ◽  
Jeongmin Hong ◽  
...  

Spin orbit torque (SOT) provides an efficient way to significantly reduce the current required for switching nanomagnets. However, SOT generated by an in-plane current cannot deterministically switch a perpendicularly polarized magnet due to symmetry reasons. On the other hand, perpendicularly polarized magnets are preferred over in-plane magnets for high-density data storage applications due to their significantly larger thermal stability in ultrascaled dimensions. Here, we show that it is possible to switch a perpendicularly polarized magnet by SOT without needing an external magnetic field. This is accomplished by engineering an anisotropy in the magnets such that the magnetic easy axis slightly tilts away from the direction, normal to the film plane. Such a tilted anisotropy breaks the symmetry of the problem and makes it possible to switch the magnet deterministically. Using a simple Ta/CoFeB/MgO/Ta heterostructure, we demonstrate reversible switching of the magnetization by reversing the polarity of the applied current. This demonstration presents a previously unidentified approach for controlling nanomagnets with SOT.


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