Composition Dependent Band Gaps of Single Crystal Cu2ZnSn(SxSe1-x)4 Solid Solutions

2012 ◽  
Vol 194 ◽  
pp. 139-143 ◽  
Author(s):  
Yi Ping Wang ◽  
Sergiu Levcenco ◽  
Dumitru O. Dumcenco ◽  
Ying Sheng Huang ◽  
Ching Hwa Ho ◽  
...  
Keyword(s):  
Solid Solutions ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Band Gaps ◽  
Chemical Vapor Transport ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vegard’S Law ◽  
Diffraction Patterns ◽  
Transport Technique

Single crystals of Cu2ZnSn(SxSe1-x)4(CZTSSe) solid solutions have deen grown by chemical vapor transport technique using ICl3as a transport agent. Analyzing the X-ray diffraction patterns reveal that the as-grown CZTSSe solid solutions are crystallized in kesterite structure and the lattice parameters are determined. The S contents of the obtained crystals are estimated by Vegard’s law. The composition dependent band gaps of CZTSSe solid solutions are studied by electrolyte electroreflectance (EER) techniques. The band gaps of CZTSSe are evaluated by a lineshape fit of the EER spectra and are found to increase almost linearly with the increase of S content.

Synthesis and Characterization of FeO+ Nanosheets

2013 ◽  
Vol 544 ◽  
pp. 148-151 ◽  
Author(s):  
Jun Guo ◽  
Cai Xia Li ◽  
Lin Zhang ◽  
Jin Feng Xia ◽  
Danyu Jiang ◽  
...  
Keyword(s):  
Colloidal Suspension ◽  
Chemical Vapor ◽  
Butyl Alcohol ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
X Ray Diffraction ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron

The layered FeOCl has been synthesized from Fe2O3 and FeCl3 by chemical vapor transport technique at 380°C., and an intercalation of sodium benzoate into as-synthesized FeOCl was conduct. After the intercalation composites were sonicated for 4 h in butyl alcohol, the colloidal suspension of layered iron oxide nanosheets was obtained. The FeOCl and the intercalation composites were analyzed by powder X-ray diffraction (XRD). Transmission Electron Microscopy (TEM) was also used to characterize the morphologies of the FeO+ Nanosheets. Except to this, the selected area electron diffraction was also performed to examine the iron nanosheets.

scholarly journals Surface Morphology Study of Chemical Vapor Transport of ZnO Crystals

Scanning ◽  
2018 ◽  
Vol 2018 ◽  
pp. 1-7 ◽  
Author(s):  
Long Fan ◽  
Jia Li ◽  
Dawei Yan ◽  
Liping Peng ◽  
Tao Jiang ◽  
...  
Keyword(s):  
Grown Crystal ◽  
Chemical Vapor ◽  
Optical Microscope ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
X Ray Diffraction ◽  
Vapor Interface ◽  
X Ray ◽  
Thermal Etching ◽  
Scanning Electron

A chemical vapor transport (CVT) method was implemented to grow bulk ZnO crystals. X-ray diffraction (XRD), field emission scanning electron microscopy (SEM), and optical microscope (OM) studies were carried out to characterize the surface properties of the grown crystal. The XRD result indicated the exposed solid-vapor interface of the as-grown crystal was composed of (0001) and {101-1} faces. Using SEM and OM, we observed small hexagonal pyramids and microstructures formed of crosslines on the as-grown crystal and found hexagonal thermal etching pits on the surfaces of seed crystals. The formation, evolution, and distribution mechanisms of the microstructures were investigated.

scholarly journals Crystal Growth of the Quasi-2D Quarternary Compound AgCrP2S6 by Chemical Vapor Transport

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 500
Author(s):  
Sebastian Selter ◽  
Yuliia Shemerliuk ◽  
Bernd Büchner ◽  
Saicharan Aswartham
Keyword(s):  
Crystal Growth ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
X Ray Diffraction ◽  
Monoclinic Symmetry ◽  
X Ray ◽  
Low Dimensional

We report optimized crystal growth conditions for the quarternary compound AgCrP2S6 by chemical vapor transport. Compositional and structural characterization of the obtained crystals were carried out by means of energy-dispersive X-ray spectroscopy and powder X-ray diffraction. AgCrP2S6 is structurally closely related to the M2P2S6 family, which contains several compounds that are under investigation as 2D magnets. As-grown crystals exhibit a plate-like, layered morphology as well as a hexagonal habitus. AgCrP2S6 crystallizes in monoclinic symmetry in the space group P2/a (No. 13). The successful growth of large high-quality single crystals paves the way for further investigations of low dimensional magnetism and its anisotropies in the future and may further allow for the manufacturing of few-layer (or even monolayer) samples by exfoliation.

Multiple Donors in Zinc Oxide Substrates

2002 ◽  
Vol 719 ◽  
Author(s):  
K. Thonke ◽  
N. Kerwien ◽  
A. Wysmolek ◽  
M. Potemski ◽  
A. Waag ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Chemical Vapor ◽  
Binding Energies ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
Oxide Substrates ◽  
Multiple Donors ◽  
Major Donors ◽  
Available Zinc ◽  
Transport Technique

AbstractWe investigate by photoluminescence (PL) nominally undoped, commercially available Zinc Oxide substrates (from Eagle Picher) grown by seeded chemical vapor transport technique in order to identify residual donors and acceptors. In low temperature PL spectra the dominant emission comes from the decay of bound exciton lines at around 3.36 eV. Zeeman measurements allow the identification of the two strongest lines and some weaker lines in-between as donorrelated. From the associated two-electron satellite lines binding energies of the major donors of 48 meV and 55 meV, respectively, can be deduced.

Growth and Characterization of bulk GaN by Ga Vapor Transport

2004 ◽  
Vol 831 ◽  
Author(s):  
Phanikumar Konkapaka ◽  
Huaqiang Wu ◽  
Yuri Makarov ◽  
Michael G. Spencer
Keyword(s):  
Growth Rates ◽  
Vapor Transport ◽  
Spiral Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Bulk Gan ◽  
Diffraction Patterns

ABSTRACTBulk GaN crystals of dimensions 8.5 mm × 8.5 mm were grown at growth rates greater than 200μm/hr using Gallium Vapor Transport technique. GaN powder and Ammonia were used as the precursors for growing bulk GaN. Nitrogen is used as the carrier gas to transport the Ga vapor that was obtained from the decomposition of GaN powder. During the process, the source GaN powder was kept at 1155°C and the seed at 1180°C. Using this process, it was possible to achieve growth rates of above 200 microns/hr. The GaN layers thus obtained were characterized using X-Ray diffraction [XRD], scanning electron microscopy [SEM], and atomic force microscopy [AFM]. X-ray diffraction patterns showed that the grown GaN layers are single crystals oriented along c direction. AFM studies indicated that the dominant growth mode was dislocation mediated spiral growth. Electrical and Optical characterization were also performed on these samples. Hall mobility measurements indicated a mobility of 550 cm2/V.s and a carrier concentration of 6.67 × 1018/cm3

Preparation of Plate-Like Bulk Beta Iron-Disilicide Crystals Using Metal to Semiconductor Phase Transition by Heat Treatment

2002 ◽  
Vol 749 ◽  
Author(s):  
Masato Osamura ◽  
Hidetaka Ishihara ◽  
Zhengxin Liu ◽  
Hisao Tanoue ◽  
Shirou. Sakuragi ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Chemical Vapor Transport ◽  
Annealing Duration ◽  
Bulk Crystals ◽  
X Ray Diffraction ◽  
X Ray ◽  
Flat Surfaces ◽  
The Matrix ◽  
The Mean ◽  
Micro Analysis

ABSTRACTPlate-like β-FeSi2 bulk crystals with size of 10×10 mm2 and thickness of 1 mm were fabricated by annealing CVT (chemical vapor transport)-grown plate-like α-Fe2Si5 at 800°C in Ar atmosphere. Before annealing, α-Fe2Si5 crystals were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM) to be single crystals with flat surfaces. XRD measurements of β-FeSi2 crystals subjected to annealing showed that they had a po lycrystalline structure. The mean Fe/Si co mposit ion rat io of β-FeSi2 crystal measured by energy dispersive x-ray spectroscopy (EDX) was 31/69 and it was the same as that of α-Fe2Si5 bulk crystal before annealing. SEM, Raman scattering and electron probe micro-analysis (EPMA) measurements identified that there existed small Si precipitates mixed in the matrix of β-FeSi2 crystals. At annealing temperature of 800°C, the plate-like β-FeSi2 bulk was obtained even the annealing duration time was as short as 5 hours.

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