scholarly journals Crystal Growth of the Quasi-2D Quarternary Compound AgCrP2S6 by Chemical Vapor Transport

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 500
Author(s):  
Sebastian Selter ◽  
Yuliia Shemerliuk ◽  
Bernd Büchner ◽  
Saicharan Aswartham
Keyword(s):  
Crystal Growth ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
X Ray Diffraction ◽  
Monoclinic Symmetry ◽  
X Ray ◽  
Low Dimensional

We report optimized crystal growth conditions for the quarternary compound AgCrP2S6 by chemical vapor transport. Compositional and structural characterization of the obtained crystals were carried out by means of energy-dispersive X-ray spectroscopy and powder X-ray diffraction. AgCrP2S6 is structurally closely related to the M2P2S6 family, which contains several compounds that are under investigation as 2D magnets. As-grown crystals exhibit a plate-like, layered morphology as well as a hexagonal habitus. AgCrP2S6 crystallizes in monoclinic symmetry in the space group P2/a (No. 13). The successful growth of large high-quality single crystals paves the way for further investigations of low dimensional magnetism and its anisotropies in the future and may further allow for the manufacturing of few-layer (or even monolayer) samples by exfoliation.

Synthesis and Characterization of FeO+ Nanosheets

2013 ◽  
Vol 544 ◽  
pp. 148-151 ◽  
Author(s):  
Jun Guo ◽  
Cai Xia Li ◽  
Lin Zhang ◽  
Jin Feng Xia ◽  
Danyu Jiang ◽  
...  
Keyword(s):  
Colloidal Suspension ◽  
Chemical Vapor ◽  
Butyl Alcohol ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
X Ray Diffraction ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron

The layered FeOCl has been synthesized from Fe2O3 and FeCl3 by chemical vapor transport technique at 380°C., and an intercalation of sodium benzoate into as-synthesized FeOCl was conduct. After the intercalation composites were sonicated for 4 h in butyl alcohol, the colloidal suspension of layered iron oxide nanosheets was obtained. The FeOCl and the intercalation composites were analyzed by powder X-ray diffraction (XRD). Transmission Electron Microscopy (TEM) was also used to characterize the morphologies of the FeO+ Nanosheets. Except to this, the selected area electron diffraction was also performed to examine the iron nanosheets.

scholarly journals Surface Morphology Study of Chemical Vapor Transport of ZnO Crystals

Scanning ◽  
2018 ◽  
Vol 2018 ◽  
pp. 1-7 ◽  
Author(s):  
Long Fan ◽  
Jia Li ◽  
Dawei Yan ◽  
Liping Peng ◽  
Tao Jiang ◽  
...  
Keyword(s):  
Grown Crystal ◽  
Chemical Vapor ◽  
Optical Microscope ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
X Ray Diffraction ◽  
Vapor Interface ◽  
X Ray ◽  
Thermal Etching ◽  
Scanning Electron

A chemical vapor transport (CVT) method was implemented to grow bulk ZnO crystals. X-ray diffraction (XRD), field emission scanning electron microscopy (SEM), and optical microscope (OM) studies were carried out to characterize the surface properties of the grown crystal. The XRD result indicated the exposed solid-vapor interface of the as-grown crystal was composed of (0001) and {101-1} faces. Using SEM and OM, we observed small hexagonal pyramids and microstructures formed of crosslines on the as-grown crystal and found hexagonal thermal etching pits on the surfaces of seed crystals. The formation, evolution, and distribution mechanisms of the microstructures were investigated.

Chemical Vapor Transport, Crystal Growth, Thermodynamic and Fluid Dynamic Analysis of the Hgl−xCdxTe System

1981 ◽  
Vol 9 ◽  
Author(s):  
Heribert Wiedemeier ◽  
Dipankar Chandra
Keyword(s):  
Crystal Growth ◽  
Fluid Dynamic ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
Phase System ◽  
X Ray Diffraction ◽  
Gaseous Species ◽  
Partial Pressures ◽  
Growth Properties

EXTENDED ABSTRACTThe chemical vapor transport and crystal growth properties of the Hgl−xCdxTe iodine system (x=0.2, 0.5 and 0.7) are investigated as a function of transport agent pressure and orientation of the density gradient with respect to the gravity vector to understand the effects of convection on mass transfer and crystal morphology. A thermodynamic analysis of the solid-gas phase system yielded the composition of the vapor and the partial pressures of the gaseous species as a function of temperature and total pressure to assist in the elucidation of the dominant transport mode. Optical and scanning electron microscopy, electron microprobe, chemical etching, X-ray diffraction and energy dispersive spectroscopy techniques were employed to examine the surface and bulk morphology and compositional homogeneity of single crystals obtained under different conditions.

Composition Dependent Band Gaps of Single Crystal Cu2ZnSn(SxSe1-x)4 Solid Solutions

2012 ◽  
Vol 194 ◽  
pp. 139-143 ◽  
Author(s):  
Yi Ping Wang ◽  
Sergiu Levcenco ◽  
Dumitru O. Dumcenco ◽  
Ying Sheng Huang ◽  
Ching Hwa Ho ◽  
...  
Keyword(s):  
Solid Solutions ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Band Gaps ◽  
Chemical Vapor Transport ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vegard’S Law ◽  
Diffraction Patterns ◽  
Transport Technique

Single crystals of Cu2ZnSn(SxSe1-x)4(CZTSSe) solid solutions have deen grown by chemical vapor transport technique using ICl3as a transport agent. Analyzing the X-ray diffraction patterns reveal that the as-grown CZTSSe solid solutions are crystallized in kesterite structure and the lattice parameters are determined. The S contents of the obtained crystals are estimated by Vegard’s law. The composition dependent band gaps of CZTSSe solid solutions are studied by electrolyte electroreflectance (EER) techniques. The band gaps of CZTSSe are evaluated by a lineshape fit of the EER spectra and are found to increase almost linearly with the increase of S content.

AlxGa1-xN-Based Materials and Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
P. Kung ◽  
A. Saxler ◽  
D. Walker ◽  
X. Zhang ◽  
R. Lavado ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Bragg Reflectors ◽  
X Ray Diffraction ◽  
Chemical Vapor Deposition Growth ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Dimensional Electron Gas ◽  
P Type

ABSTRACTWe present the metalorganic chemical vapor deposition growth, n-type and p-type doping and characterization of AlxGa1-xN alloys on sapphire substrates. We report the fabrication of Bragg reflectors and the demonstration of two dimensional electron gas structures using AlxGa1-xN high quality films. We report the structural characterization of the AlxGa1-xN / GaN multilayer structures and superlattices through X-ray diffraction and transmission electron microscopy. A density of screw and mixed threading dislocations as low as 107 cm-2 was estimated in AlxGa1-xN / GaN structures. The realization of AlxGa1-xN based UV photodetectors with tailored cut-off wavelengths from 365 to 200 nm are presented.

Growth and Characterization of bulk GaN by Ga Vapor Transport

2004 ◽  
Vol 831 ◽  
Author(s):  
Phanikumar Konkapaka ◽  
Huaqiang Wu ◽  
Yuri Makarov ◽  
Michael G. Spencer
Keyword(s):  
Growth Rates ◽  
Vapor Transport ◽  
Spiral Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Bulk Gan ◽  
Diffraction Patterns

ABSTRACTBulk GaN crystals of dimensions 8.5 mm × 8.5 mm were grown at growth rates greater than 200μm/hr using Gallium Vapor Transport technique. GaN powder and Ammonia were used as the precursors for growing bulk GaN. Nitrogen is used as the carrier gas to transport the Ga vapor that was obtained from the decomposition of GaN powder. During the process, the source GaN powder was kept at 1155°C and the seed at 1180°C. Using this process, it was possible to achieve growth rates of above 200 microns/hr. The GaN layers thus obtained were characterized using X-Ray diffraction [XRD], scanning electron microscopy [SEM], and atomic force microscopy [AFM]. X-ray diffraction patterns showed that the grown GaN layers are single crystals oriented along c direction. AFM studies indicated that the dominant growth mode was dislocation mediated spiral growth. Electrical and Optical characterization were also performed on these samples. Hall mobility measurements indicated a mobility of 550 cm2/V.s and a carrier concentration of 6.67 × 1018/cm3

Single crystal growth of CdSiAs2 by chemical vapor transport; its structure and electrical properties

1984 ◽  
Vol 67 (2) ◽  
pp. 185-194 ◽  
Author(s):  
M. Avirović ◽  
M. Lux-Steiner ◽  
U. Elrod ◽  
J. Hönigschmid ◽  
E. Bucher
Keyword(s):  
Crystal Growth ◽  
Electrical Properties ◽  
Single Crystal ◽  
Chemical Vapor ◽  
Single Crystal Growth ◽  
Vapor Transport ◽  
Chemical Vapor Transport
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