Growing Features and Luminescence of Bi3+ Ions in Gd3Ga5O12 Epitaxial Films

2013 ◽  
Vol 200 ◽  
pp. 215-219 ◽  
Author(s):  
Andriy P. Luchechko ◽  
Igor I. Syvorotka ◽  
Yaroslav Zakharko ◽  
I.M. Syvorotka

Abstract. Excitation and emission spectra under UV and X-ray excitations, as well as the luminescence decay kinetics of Gd3Ga5O12: Bi single crystalline films were studied. The emission spectra observed in the spectral region 350-700 nm at room temperature consist two elementary bands peaked at 446 and 521 nm. The influence of growth conditions on the luminescent properties of Gd3Ga5O12: Bi3+ garnet have been revealed. The integral and relative intensities of the luminescence bands depend on the excitation wavelength. The Bi3+ decay curves of all investigated films show non-single exponential behavior at room temperature.

2015 ◽  
Vol 230 ◽  
pp. 166-171
Author(s):  
Andriy Luchechko ◽  
I.I. Syvorotka ◽  
Yaroslav Zakharko ◽  
Igor M. Syvorotka

High quality thin epitaxial films of Lu3(Ga,In)5O12:Eu3+ were grown by liquid phase epitaxy (LPE) method from Bi2O3-based flux. Excitation and emission spectra as well as luminescence decay kinetics of Lu3(Ga,In)5O12:Eu3+ epitaxial films were studied under UV excitation. The photoluminescence spectra of Eu3+ ions in Lu3(Ga,In)5O12:Eu3+ are characteristic to the f→f transition in the Eu3+ ions that occupied dodecahedral sites in the garnet structure. The efficient energy transfer between Bi3+→Eu3+ is observed at the excitation of Lu3(Ga,In)5O12:Eu3+ films in Bi3+ excitation band with maximum at 288 nm. The Eu3+ decay curves of all investigated films show non-single exponential behavior at room temperature.


Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 788
Author(s):  
Vitalii Gorbenko ◽  
Tetiana Zorenko ◽  
Sandra Witkiewicz-Łukaszek ◽  
Anna Shakhno ◽  
Andres Osvet ◽  
...  

This work is devoted to the crystallization and investigation of the optical properties of single crystalline films (SCFs) of Ce3+-doped Y3−xCaxAl5−ySiyO12 garnet, where the content of Ca2+ and Si4+ cations varied in the x = 0.13–0.52 and y = 0.065–0.5 ranges, respectively. The SCF samples were grown using the liquid phase epitaxy technique onto Y3Al5O12 substrates from the melt solution with equimolar Ca and Si content using PbO-B2O3 flux. However, the Ca and Si concentration in Y3−xCax Al5−ySiyO12:Ce SCFs is not equal: the Ca2+ content was systematically larger than that of Si4+, and the Ca2+ excess is compensated for by the Ce4+ ion formation. The absorption, scintillation, and luminescent properties of Y3−xCaxAl5−ySiyO12:Ce SCFs with different Ca/Si concentrations were investigated and compared with the sample of YAG:Ce SCF. Due to the creation of Ce4+ ions, the as-grown Y3−xCaxAl5−ySiyO12:Ce SCFs show relatively low light yield (LY) under α–particle excitation but a fast scintillation response with a decay time in the ns range. After SCF annealing in the reducing (N2 + H2) atmosphere at T > 1000 °C, the recharging of Ce4+→Ce3+ ions occurs. Furthermore, the samples annealed at 1300 °C SCF possess an LY of about 40% in comparison with the reference YAG:Ce SCF and scintillation decay kinetics much closer to that of the SCF counterpart. Due to Ca2+ and Si4+ alloying, the Ce3+ emission spectra in Y3−xCaxAl5−ySiyO12 SCFs are extended to the red range in comparison with the spectra of YAG:Ce SCF. Such an extension is caused by the Ce3+ multicenter formation at the substitutions of both Y3+ and Ca2+ dodecahedral positions in the hosts of these mixed garnets.


2020 ◽  
Vol 128 (1) ◽  
pp. 122
Author(s):  
А.С. Кулагина ◽  
А.И. Хребтов ◽  
Р.Р. Резник ◽  
Е.В. Убыйвовк ◽  
А.П. Литвин ◽  
...  

On the example of InP/InAsP/InP nanowires, the role of theoretical models in the photodynamics study of hybrid semiconductor structures is considered. The photodynamics of luminescence of an array of InP/InAsP/InP nanowires formed by molecular beam epitaxy on a Si (III) substrate was studied. Based on a comparison of several kinetic models, including the use of poly-exponential and stretched-exponential functions, the analysis of experimental data is carried out. Experiments were performed by excitation with laser radiation of 633 nm at room temperature. It has been shown that the luminescence decay kinetics of the InAsP nanoinsert is best described in terms of the contact quenching model. The total decay time of the excited state (radiation lifetime) of the InAsP insert was estimated at τ ~ 40 ns. The reasons for the unusually long duration of transfer of excitation from InP have been suggested.


2016 ◽  
Vol 675-676 ◽  
pp. 376-379 ◽  
Author(s):  
Narun Luewarasirikul ◽  
Piyachat Meejitpaisan ◽  
Jakrapong Kaewkhao

Lanthanum calcium phosphate glasses doped with Eu3+ ions in compositions 20La2O3:10CaO:(70-x)P2O5:xEu2O3 (where x = 0.05, 0.10, 0.50 and 1.50 mol%) were prepared by melt-quenching technique. The density and molar volume measurements were carried out at room temperature. The absorption spectra were investigated in the UV-Vis-NIR region from 200 to 2500 nm. The emission spectra of Eu3+-doped glasses centered at 590 nm (5D0→7F1), 612 nm (5D0→7F2), 652 nm (5D0→7F3) and 699 nm (5D0→7F4) have been observed with 393 nm excitation wavelength.


1994 ◽  
Vol 348 ◽  
Author(s):  
M. Nikl ◽  
K. Nitsch ◽  
I. Dafinei ◽  
P. Lecoq ◽  
G.P. Pazzi ◽  
...  

ABSTRACTThe spectral and kinetic properties of photoluminescence of Pb2+ aggregated phase in CsC1 host, together with scintillation characteristics of CsCI:Pb crystals, are reported in the 10 - 300 K temperature range. Absorption, steady-state excitation and emission spectra of Pb2+ phase in CsCI host are similar to those of CsPbCl3 bulk crystal (emission peak at 419 nm at 10 K). The decay of the 421 nm luminescence of the Pb2+ phase in CsCl shows single exponential behavior with extremely short decay time of 40 ps at 421 nm and 10 K,which is considerably shorter than the decay times found in the decay of CsPbCl3 bulk emission (0.45, 2.8 and 12 ns at 418 nm and 10 K). In the scintillation decay of CsCI:Pb, two components with 0.95-1 ns and 2-3 ns decay times were found and no slower component is present at room temperature.


2020 ◽  
Vol 11 (9) ◽  
pp. 3672-3680
Author(s):  
Jintao Kong ◽  
Xiaoying Shang ◽  
Wei Zheng ◽  
Xueyuan Chen ◽  
Datao Tu ◽  
...  

2005 ◽  
Vol 866 ◽  
Author(s):  
Ei Ei Nyein ◽  
Uwe Hömmerich ◽  
Chanaka Munasinghe ◽  
Andrew J. Steckl ◽  
John M. Zavada

AbstractThe emission properties of Eu doped GaN thin films prepared by interrupted growth epitaxy (IGE) were investigated through excitation-wavelength dependent and time-resolved photoluminescence (PL) studies. Under above-gap excitation (333-363 nm) large differences were observed in the Eu3+ PL intensity and spectral features as a function of Ga shutter cycling time. The overall strongest red Eu3+ PL intensity was obtained from a sample grown with a Gashutter cycling time of 20 minutes. The main Eu3+ emission line originating from 5D0→ 7F2 transition was composed of two peaks located at 620 nm and 622 nm, which varied in relative intensity depending on the growth conditions. The room-temperature emission lifetimes of the samples were non-exponential and varied from ∼50 νs to ∼200 νs (1/e lifetimes). Under resonant excitation at 471 nm (7F0→5D2) all samples exhibited nearly identical PL spectra independent of Ga shutter cycling time. Moreover, the Eu3+ PL intensities and lifetimes varied significantly less compared to above-gap excitation. The excitation wavelengths dependent PL results indicate the existence of different Eu3+ centers in GaN: Eu, which can be controlled by the Ga shutter cycling time.


2012 ◽  
Vol 490-495 ◽  
pp. 3145-3149
Author(s):  
Li Lv ◽  
Yu Zhe Xie ◽  
Xiao Qing Liu ◽  
Yi Guo Su ◽  
Xiao Jing Wang

CaMoO4 microcrystals with controllable morphologies and luminescent properties were successfully synthesized via hydrothermal treatment. The as-prepared samples are characterized using X-ray powder diffraction, scanning electron microscopy; Fourier transformed infrared spectra. By adjusting the fundamental experimental parameters including reaction time, temperature and the amount of organic additives, CaMoO4 exhibited various morphologies, such as particles, dumbbells as well as flowers. Moreover, it is seen that CaMoO4 can be well crystallized with tetragonal structure at room temperature. The photoluminescence spectra of CaMoO4 display a strong and broad band emission with a maximum at 550 nm under excitation wavelength of 310 nm at room temperature. The luminescent intensity of CaMoO4 varied with the reaction time and temperature and was optimized at 200 oC, 45 h. The work provides a facile synthetic route for the construction of inorganic materials with controllable morphologies and luminescent properties


2008 ◽  
Vol 8 (3) ◽  
pp. 1432-1436 ◽  
Author(s):  
Hongquan Yu ◽  
Hongwei Song ◽  
Guohui Pan ◽  
Reifei Qin ◽  
Libo Fan ◽  
...  

This paper describes a procedure based on electrospinning for generating europium-doped yttrium vanadate (YVO4:Eu3+) nanofibers with diameters ranging from 30 to 50 nm. The YVO4:Eu3+ nanofibers were obtained through calcining precursory nanofibers, which were prepared through the electrospinning method. Suitable electrospinning parameters, such as concentration of PVP in solution, spinneret tip-to-collector plate distance (TCD), and applied voltage between spinneret and collector plate, are used to obtain thinner and more uniform precursory nanofibers of YVO4:Eu3+, which is important for preparing smaller diameter pure YVO4:Eu3+ nanofibers. The luminescent properties of the YVO4:Eu3+ nanofibers including excitation and emission spectra and fluorescence lifetime were studied. The excitation spectrum shows a broad band extending from 200 to 350 nm, which corresponds to the strong vanadate absorption in YVO4:Eu3+. The emission spectrum is dominated by the red 5D0 → 7F2 hypersensitive transition of Eu3+. The fluorescence lifetime of Eu3+ 5D0 → 7F2 (619 nm) is determined to be 493 μs at room temperature, which is basically in accordance with that in the bulk (521 μs).


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