Impact of Electrostatic Effects on Wet Etching Phenomenon in Nanoscale Region

The microminiaturization of semiconductor devices has made it necessary to control the wet etching process on the nanometer order. It is therefore extremely important to understand wet etching reactions in the nanoscale region of solid-liquid interfaces, in order to assist in optimizing process conditions to satisfy the severe demand for semiconductor devices. Simulations performed to analyze the behavior of liquid molecules in the nanoscale region have been reported [1], but there have been few reports of detailed experimental results. We here report detailed experimental results on the wet etching behavior of SiO2 film in the nanoscale region between Si materials.