A Novel Junction Profiling Methodology

2010 ◽  
Author(s):  
Tomokazu Nakai
Keyword(s):  
Failure Analysis ◽  
Profile Analysis ◽  
Semiconductor Devices ◽  
Wet Etching ◽  
Two Dimensional ◽  
Electrical Characteristics ◽  
Conventional Methods

Abstract Currently many methods are available to obtain a junction profile of semiconductor devices, but the conventional methods have drawbacks, and they could be obstacles for junction profile analysis. This paper introduces an anodic wet etching-based two-dimensional junction profiling method, which is practical, efficient, and reliable for failure analysis and electrical characteristics evaluation.

Failure Analysis of Single Shared Column Fail in DRAM Using Nano-Probing Technique

2008 ◽  
Author(s):  
Suk Min Kim ◽  
Jung Ho Lee ◽  
Jong Hak Lee ◽  
Hyung Ki Kim ◽  
Myung Sick Chang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mechanisms ◽  
Electrical Characteristics ◽  
The Future ◽  
Electrical Analysis

Abstract We report an analysis of a single shared column fail on DRAM technology using a nano-probing technique in this work. The electrical characteristics of the failed transistors show that the column fails were caused by two different failure mechanisms: abnormal contact and implant profiles. We believe that electrical analysis using nano-probing will be a powerful tool for non-visible failure analysis in the future because it is impossible to clearly reveal these two different failure mechanisms solely using physical failure methods.

A Review of Wet Etch Formulas for Silicon Semiconductor Failure Analysis

1996 ◽  
Author(s):  
T.W. Lee
Keyword(s):  
Failure Analysis ◽  
Literature Search ◽  
Wet Etching ◽  
Second Step ◽  
Environmental Concerns ◽  
Acid System ◽  
Graphical Data ◽  
Selective Etch ◽  
Chromium Compounds ◽  
Wet Etch

Abstract WET ETCHING is an important part of the failure analysis of semiconductor devices. Analysis requires etches for the removal, delineation by decoration or differential etching, and study of defects in layers of various materials. Each lab usually has a collection of favored etch recipes. Some of these etches are available premixed from the fab chemical supply. Some of these etches may be unique, or even proprietary, to your company. Additionally, the lab etch recipe list will usually contain a variety of classical "named etches". These recipes, such as Dash Etch, have persisted over time. Although well-reported in the literature, lab lists may not accurately represent these recipes, or contain complete and accurate instructions for their use. Time seems to have erased the understanding of the purpose of additives such as iodine, in some of these formulas. To identify the best etches and techniques for a failure analysis operations, a targeted literature review of articles and patents was undertaken. It was a surprise to find that much of the work was quite old, and originally done with germanium. Later some of these etches were modified for silicon. Much of this work is still applicable today. Two main etch types were found. One is concerned with the thinning and chemical polishing of silicon. The other type is concerned with identifying defects in silicon. Many of the named etches were found to consist of variations in a specific acid system. The acid system has been well characterized with ternary diagrams and 3-D surfaces. The named etches were plotted on this diagram. The original formulas and applications of the named etches were traced to assure accuracy, so that the results claimed by the original authors, may be reproduced in today's lab. The purpose of this paper is to share the condensed information obtained during this literature search. Graphical data has been corrected for modem dimensions. Selectivities have been located and discussed. The contents of more than 25 named etches were spreadsheeted. It was concluded that the best approach to delineation is a two-step etch, using uncomplicated and well-characterized standard formulas. The first step uses a decoration or differential etch technique to define the junctions. Formulations for effective decoration etches were found to be surprisingly simple. The second step uses a selective etch to define the various interconnections and dielectric layers. Chromium compounds can be completely eliminated from these formulas, to meet environmental concerns. This work, originally consisting of 30 pages with 106 references, has been condensed to conform with the formatting requirements of this publication.

Process Induced Defects in the Silicon Substrate: Approaches for Successful Failure Analysis

2010 ◽  
Author(s):  
J.G. van Hassel ◽  
Xiao-Mei Zhang
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Silicon Substrate ◽  
Processing Technique ◽  
Electrical Characteristics ◽  
Localization Method ◽  
The Right ◽  
Induced Defects

Abstract Failures induced in the silicon substrate by process marginalities or process mistakes need continuous attention in new as well as established technologies. Several case studies showing implant related defects and dislocations in silicon will be discussed. Depending on the electrical characteristics of the failure the localization method has to be chosen. The emphasis of the discussion will be on the importance of the right choice for further physical de-processing to reveal the defect. This paper focuses on the localization method, the de- processing technique and the use of Wright etch for subsequent TEM preparation.

Reballing/Rebumping Ultra-Fine Pitch Packages Less Than 0.5 mm Pitch for FA

2014 ◽  
Author(s):  
Bob Wettermann
Keyword(s):  
Solder Joint ◽  
Failure Analysis ◽  
Joint Strength ◽  
Semiconductor Devices ◽  
X Ray ◽  
Fine Pitch ◽  
Manual Methods

Abstract As the pitch and package sizes of semiconductor devices have shrunk and their complexity has increased, the manual methods by which the packages can be re-bumped or reballed for failure analysis have not kept up with this miniaturization. There are some changes in the types of reballing preforms used in these manual methods along with solder excavation techniques required for packages with pitches as fine as 0.3mm. This paper will describe the shortcomings of the previous methods, explain the newer methods and materials and demonstrate their robustness through yield, mechanical solder joint strength and x-ray analysis.

A Study of the Photoelectric Effect Caused by a Laser Beam Used in a Beam Bounce Technique in a C-AFM System

2008 ◽  
Author(s):  
Hung-Sung Lin ◽  
Mong-Sheng Wu
Keyword(s):  
Laser Beam ◽  
Failure Analysis ◽  
Atomic Force Microscope ◽  
Photoelectric Effect ◽  
Scanning Probe ◽  
Nanometer Scale ◽  
Electrical Characteristics ◽  
Atomic Force ◽  
Probe Microscope ◽  
Probe Head

Abstract The use of a scanning probe microscope (SPM), such as a conductive atomic force microscope (C-AFM) has been widely reported as a method of failure analysis in nanometer scale science and technology [1-6]. A beam bounce technique is usually used to enable the probe head to measure extremely small movements of the cantilever as it is moved across the surface of the sample. However, the laser beam used for a beam bounce also gives rise to the photoelectric effect while we are measuring the electrical characteristics of a device, such as a pn junction. In this paper, the photocurrent for a device caused by photon illumination was quantitatively evaluated. In addition, this paper also presents an example of an application of the C-AFM as a tool for the failure analysis of trap defects by taking advantage of the photoelectric effect.

The Influence of Optical Beams on Semiconductor Devices During Failure Analysis

2002 ◽  
Author(s):  
Charles Zhang ◽  
Matt Thayer ◽  
Lowell Herlinger ◽  
Greg Dabney ◽  
Manuel Gonzalez
Keyword(s):  
Failure Analysis ◽  
Semiconductor Devices ◽  
Laser Wavelength ◽  
Fault Isolation ◽  
Analysis Techniques ◽  
Cmos Transistor ◽  
Optical Beams

Abstract A number of backside analysis techniques rely on the successful use of optical beams in performing backside fault isolation. In this paper, the authors have investigated the influence of the 1340 nm and 1064 nm laser wavelength on advanced CMOS transistor performance.

Precise Localization of 28 nm via Chain Resistive Defect Using EBAC and Nanoprobing

2012 ◽  
Author(s):  
P. Larré ◽  
H. Tupin ◽  
C. Charles ◽  
R.H. Newton ◽  
A. Reverdy
Keyword(s):  
Electron Beam ◽  
Failure Analysis ◽  
Test Structure ◽  
Precise Localization ◽  
Isolation Method ◽  
Accurate Detection ◽  
Conventional Methods ◽  
Technology Nodes ◽  
Tem Lamella

Abstract As technology nodes continue to shrink, resistive opens have become increasingly difficult to detect using conventional methods such as AVC and PVC. The failure isolation method, Electron Beam Absorbed Current (EBAC) Imaging has recently become the preferred method in failure analysis labs for fast and highly accurate detection of resistive opens and shorts on a number of structures. This paper presents a case study using a two nanoprobe EBAC technique on a 28nm node test structure. This technique pinpointed the fail and allowed direct TEM lamella.

Application of Tem on Sub-Half Micron Semiconductor Devices

1998 ◽  
Vol 523 ◽  
Author(s):  
Hong Zhang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Failure Analysis ◽  
Process Evaluation ◽  
Semiconductor Devices ◽  
Single Source ◽  
Process Step ◽  
Transmission Electron ◽  
Single Process ◽  
Single Process Step

AbstractApplication of transmission electron microscopy on sub-half micron devices has been illustrated in terms of process evaluation and failure analysis. For process evaluation, it is emphasized that a large number of features need to be examined in order to have reliable conclusions about the processes, while for failure analysis, the goal is to pin-point a single process step causing failure or a single source introducing the particle defect.

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