Flexible Thin Film Coating by Photo-assisted Chemical Solution Process

Abstract Printed electronics is creating many new products given the benefits of the technology compared to conventional electronics, such as thinness, flexibility, cost, ease of manufacture, fast production turn around, “green” technology, power efficiency and more. For this purpose, we have developed the photo reaction of nano-particle method (PRNP) for the preparation of the patterned metal oxide thin film on organic and glass substrates. In this paper, we demonstrate the preparation of transparent conducting thin film or resister film by the PRNP process, and their properties of the obtained films. By using the combination of the two procedures, the resistivity of the film was 5.94×10−4 Ωcm. The resulting ITO film showed mobility as high as 9.99 cm2 V−1 s−1at the carrier density of 1.05 ×1021 cm−3.Also, flexible resistor thin film(RuO2) on PI substrate was prepared by ELAMOD.

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Low Temperature Growth of Oxide Thin Films by Photo Reaction of Nanoparticles

Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) ◽

10.4071/cicmt-2012-tp56 ◽

2012 ◽

Vol 2012 (CICMT) ◽

pp. 000235-000237

Author(s):

Tetsuo Tsuchiya ◽

T. Nakajima ◽

K. Shinoda

Keyword(s):

Thin Film ◽

Power Efficiency ◽

Printed Electronics ◽

Particle Method ◽

Green Technology ◽

Oxide Thin Film ◽

Temperature Growth ◽

Glass Substrates ◽

Ito Film ◽

Metal Oxide Thin Film

Printed electronics is creating many new products given the benefits of the technology compared to conventional electronics, such as thinness, flexibility, cost, ease of manufacture, fast production turn around, “green” technology, power efficiency and more. For this purpose, we have developed the photo reaction of nano-particle method (PRNP) for the preparation of the patterned metal oxide thin film on organic and glass substrates. In this paper, we demonstrate the preparation of transparent conducting thin film by the PRNP process, and their properties of the obtained film. By using the combination of the two procedures, the resistivity of the film was 5.94×10−4 Ωcm. The resulting ITO film showed mobility as high as 9.99 cm2 V−1 s−1 at the carrier density of 1.05 ×1021 cm−3.

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Soluble oxide gate dielectrics prepared using the self-combustion reaction for high-performance thin-film transistors

Journal of Materials Chemistry C ◽

10.1039/c4tc00874j ◽

2014 ◽

Vol 2 (28) ◽

pp. 5695-5703 ◽

Cited By ~ 39

Author(s):

Eun Jin Bae ◽

Young Hun Kang ◽

Mijeong Han ◽

Changjin Lee ◽

Song Yun Cho

Keyword(s):

Thin Film ◽

Low Temperatures ◽

Thin Film Transistors ◽

High Performance ◽

Gate Dielectrics ◽

Solution Process ◽

The Self ◽

Oxide Thin Film ◽

Combustion Chemistry ◽

Metal Oxide Thin Film

We report the fabrication of high-performance metal oxide thin-film transistors (TFTs) with AlOx gate dielectrics using combustion chemistry in a solution process to provide energy to convert oxide precursors into oxides at low temperatures.

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