A High Temperature, Fast Switching SiC Multi-chip Power Module (MCPM) for High Frequency (> 500 kHz) Power Conversion Applications

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000056-000060 ◽  
Author(s):  
Z. Cole ◽  
B. S. Passmore ◽  
B. Whitaker ◽  
A. Barkley ◽  
T. McNutt ◽  
...  
Keyword(s):  
High Temperature ◽  
High Frequency ◽  
Power Conversion ◽  
Three Dimensional ◽  
Boost Converter ◽  
Switching Frequency ◽  
Power Module ◽  
Element Analysis ◽  
Switching Characteristics ◽  
Three Dimensional Finite Element

In high frequency power conversion applications, the dominant mechanism attributed to power loss is the turn-on and -off transition times. To this end, a full-bridge silicon carbide (SiC) multi-chip power module (MCPM) was designed to minimize parasitics in order to reduce over-voltage/current spikes as well as resistance in the power path. The MCPM was designed and packaged using high temperature (> 200 °C) materials and processes. Using these advanced packaging materials and devices, the SiC MCPM was designed to exhibit low thermal resistance which was modeled using three-dimensional finite-element analysis and experimentally verified to be 0.18 °C/W. A good agreement between the model and experiment was achieved. MCPMs were assembled and the gate leakage, drain leakage, on-state characteristics, and on-resistance were measured over temperature. To verify low parasitic design, the SiC MCPM was inserted into a boost converter configuration and the switching characteristics were investigated. Extremely low rise and fall times of 16.1 and 7.5 ns were observed, respectively. The boost converter demonstrated an efficiency of > 98.6% at 4.8 kW operating at a switching frequency of 250 kHz. In addition, a peak efficiency of 96.5% was achieved for a switching frequency of 1.2 MHz and output power of 3 kW.

A High Temperature, High Power Density Package for SiC and GaN Power Devices

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000208-000213 ◽  
Author(s):  
Z. Cole ◽  
B. McGee ◽  
J. Stabach ◽  
C. B. O'Neal ◽  
B. Passmore
Keyword(s):  
High Temperature ◽  
Power Density ◽  
High Power ◽  
Mechanical Design ◽  
Three Dimensional ◽  
High Power Density ◽  
Power Module ◽  
Modeling And Analysis ◽  
Low Profile ◽  
Three Dimensional Finite Element

In this work, a compact 600 – 1700 V high current power package housing either silicon carbide (SiC) or gallium nitride (GaN) power die was designed and developed. Several notable configurations of the package include diode half-bridges, co-packed MOSFET-diode pairs, and cascode configured GaN devices. In order to avoid a significant redesign effort for each new application or improvement in device technology, a device-neutral design strategy enables the use of a variety of die types from any manufacturer depending on the end-use application's requirements. The basic SOT-227 is a widely used package type found in everything from electronic welders and power supplies to motor controls and inverters. This module is a variant of that style of package which also addresses some issues that a standard SOT-227 package has when used in higher voltage applications; it has increased creepage and clearance distances which meet IPC, UL, and IEC standards up to 1700 volts while retaining an isolated substrate. It also has low parasitic values in comparison to the SOT-227. One of the key elements of this design is the removal of the baseplate. This allows for far lower weight, volume, and cost as well as reduced manufacturing complexity. The wide bandgap power package is composed of high temperature capable materials, which allow for the high junction temperatures inherent in these high power density devices. This paves the way for the design of a small, low-profile package with low parasitic inductances and a small junction-to-case thermal resistance. This paper will discuss the mechanical design of the power package as well as the three-dimensional finite-element modeling and analysis of the thermal, electrical, and mechanical characteristics. In addition, the electrical characteristics as a function of temperature of the power module up to 225 °C will be presented.

The Reliability Prediction of HTR’s Graphite Component in Various Temperature and Neutron Dose Levels

2013 ◽  
Author(s):  
Xiang Fang ◽  
Haitao Wang ◽  
Xingtuan Yang ◽  
Suyuan Yu
Keyword(s):  
High Temperature ◽  
Neutron Irradiation ◽  
Three Dimensional ◽  
Reactor Core ◽  
Neutron Dose ◽  
Element Analysis ◽  
The Core ◽  
Three Dimensional Finite Element ◽  
Dose Levels ◽  
The Impact

In high temperature gas-cooled reactors (HTRs), graphite is used as the main structure material. The side reflecter of the reactor core is composed by a pile of graphite bricks. In real operational condition of the reactor, both high temperature and fast neutron irradiation have great effect on the behavior of graphite components. The non-uniform distribution of temperature and neutron dose cause obvious stress accumulation, which greatly affects the security and reliability of the graphite components. In addition, high temperature and neutron irradiation make the properties of graphite change in evidence, and the changes are not linear. Such changes must be considered and simulated in the calculation, in order to predict the stress concentration condition and the reliability of the graphite brick correctly. A FORTRAN code based on user subroutines of MSC.MARC is developed in INET in order to perform three-dimensional finite element analysis of irradiated behavior of the graphite components for the HTRs. In this paper, the stress level and failure probability of graphite components are calculated and obtained under different in-core temperatures and neutron dose levels of the core side of brick. 400°C, 500°C, 600°C and 700°C are selected as the core side temperature, while the range of neutron dose is 0 to 1022n cm-2 (EDN). Different constitutive laws are used in stress analysis procedure. The impact of different temperature and neutron dose levels are discussed.

Development of a Wire-Bonding-Less SiC Power Module Operating over a Wide Temperature Range

2016 ◽  
Vol 858 ◽  
pp. 1066-1069 ◽  
Author(s):  
Shinya Sato ◽  
Hidekazu Tanisawa ◽  
Takeshi Anzai ◽  
Hiroki Takahashi ◽  
Yoshinori Murakami ◽  
...  
Keyword(s):  
High Temperature ◽  
Wide Temperature Range ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Power Module ◽  
Active Metal ◽  
Switching Characteristics

In this paper, we describe a power module fabricated using SiC metal–oxide–semiconductor field-effect transistors (MOSFETs). A C-R snubber is integrated into this power module for reduction of the surge voltage and dumping of the voltage ringing. The four SiC MOSFETs are sandwiched between active metal copper (AMC) substrates. The surfaces of the SiC MOSFETs are attached to AMC substrates by Al bumps, owing to which the power module shows low inductance. Moreover, this power module ensures credibility and reliability at higher operating temperatures beyond 200 °C. The switching characteristics of the module are studied experimentally for high-temperature and high-frequency operations.

Finite Element Analysis of Nonuniformity of Tires with Imperfections5

2007 ◽  
Vol 35 (3) ◽  
pp. 226-238 ◽  
Author(s):  
K. M. Jeong ◽  
K. W. Kim ◽  
H. G. Beom ◽  
J. U. Park
Keyword(s):  
Finite Element Analysis ◽  
Finite Element ◽  
Three Dimensional ◽  
Element Model ◽  
Radial Force ◽  
Element Analysis ◽  
The Finite Element Analysis ◽  
Dimensional Finite Element ◽  
Force Variation ◽  
Three Dimensional Finite Element

Abstract The effects of variations in stiffness and geometry on the nonuniformity of tires are investigated by using the finite element analysis. In order to evaluate tire uniformity, a three-dimensional finite element model of the tire with imperfections is developed. This paper considers how imperfections, such as variations in stiffness or geometry and run-out, contribute to detrimental effects on tire nonuniformity. It is found that the radial force variation of a tire with imperfections depends strongly on the geometrical variations of the tire.

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