Realisation of High Temperature Electronics Packaging Technology for Sensor Conditioning and Processing Applications

2012 ◽  
Vol 2012 (1) ◽  
pp. 000192-000199
Author(s):  
S T Riches ◽  
C Johnston ◽  
A Lui
Keyword(s):  
High Temperature ◽  
High Pressures ◽  
Silicon On Insulator ◽  
Electrical Performance ◽  
Operating Life ◽  
Reliability Data ◽  
High Temperature Electronics ◽  
Aero Engine ◽  
Operating Temperatures

The requirement to install electronic power and control systems in high temperature environments in aero-engines and in down-well exploration has posed a challenge to the traditional limit of 125°C of electronics systems. The leap in operating temperature to above 200°C in combination with high pressures, vibrations and potentially corrosive environments means that different semiconductors, passives, circuit boards and assembly processes will be needed to fulfil target performance specifications. Silicon on Insulator (SOI) device technology has been shown to be capable of functioning satisfactorily at operating temperatures of >200°C. Most of the applications to date have required performance for short times (<2,000 hours) at the highest operating temperatures of up to 225°C in down-well drilling applications. There is interest in extending the endurance of high temperature electronics into aero-engine and other applications where a minimum 20 year operating life is stipulated. Most of the reliability data on the high temperature endurance of the integrated circuit is generated with little consideration of the packaging technologies, whilst most of the reliability data pertinent to high temperature packaging technologies uses test pieces, which limits any conclusions relating to long term electrical performance. This paper will present results of studies on high temperature packaging technologies relevant to signal conditioning and processing functions for sensors in down-well and aero-engine applications. Different die attach and wire bond options have been included in the study and the performance of several functional blocks on a high temperature SOI device has been tracked over the endurance tests which have lasted for >11,000 hours at 250°C. Degradation phenomena such as thermal migration and material deterioration due to high temperature exposure in air and inert atmospheres will be described. An assessment of the availability of high temperature materials and components to meet long term requirements for operation at 250°C will be presented.

End of Life Failure Modes for Packaged SOI Devices for Signal Conditioning and Processing Applications

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000327-000334
Author(s):  
S T Riches ◽  
C Johnston ◽  
A Crossley ◽  
P Grant
Keyword(s):  
High Temperature ◽  
End Of Life ◽  
Failure Modes ◽  
Reliability Data ◽  
High Temperature Electronics ◽  
Die Attach ◽  
Aero Engine ◽  
Endurance Tests ◽  
Soi Devices

Silicon on Insulator (SOI) device technology has been shown to be capable of functioning satisfactorily at operating temperatures of >200°C. Most of the applications to date have required performance for short times (<2,000 hours) at the highest operating temperatures of up to 225°C in down-well drilling applications. There is interest in extending the endurance of high temperature electronics into aero-engine and other applications where a minimum 20 year operating life is stipulated. In order to gain confidence in high temperature electronics that can meet this requirement, accurate reliability data are needed and end of life failure modes need to be identified. Most of the reliability data on the high temperature endurance of the integrated circuit is generated with little consideration of the packaging technologies, whilst most of the reliability data pertinent to high temperature packaging technologies uses test pieces rather than devices, which limits any conclusions relating to long term electrical performance. This paper presents results of temperature storage and cycling endurance studies on SOI devices combined with high temperature packaging technologies relevant to signal conditioning and processing functions for sensors in down-well and aero-engine applications. The endurance studies have been carried out for up to 11,088 hours at 250°C, with functioning devices being tested periodically at room temperature, 125°C and 250°C and rapid thermal cycling from −40°C to +225°C. Different die attach and wire bond options have been included in the study and the performance of several functional blocks on the SOI device has been tracked over the endurance tests. The failure modes observed on completion of the endurance tests include die cracking and deterioration of the device bond pads accelerated due to degradation of some die attach materials. The routes to achieving stable long term performance of packaged devices at temperatures of 250°C will be outlined.

High Temperature Endurance of Packaged SOI Devices for Signal Conditioning and Processing Applications

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000251-000254
Author(s):  
S T Riches ◽  
C Johnston ◽  
M Sousa ◽  
P Grant
Keyword(s):  
High Temperature ◽  
Electronic Materials ◽  
Silicon On Insulator ◽  
Electrical Performance ◽  
Research Centre ◽  
Signal Conditioning ◽  
Reliability Data ◽  
Die Attach ◽  
Soi Devices ◽  
Formed Part

Silicon on Insulator (SOI) device technology is fulfilling a niche requirement for electronics that functions satisfactorily at operating temperatures of >200°C. Most of the reliability data on the high temperature endurance of the devices is generated on the device itself with little attention being paid to the packaging technology around the device. Similarly, most of the reliability data generated on high temperature packaging technologies uses testpieces rather than real devices, which restricts any conclusions on long term electrical performance. This paper presents results of high temperature endurance studies on SOI devices combined with high temperature packaging technologies relevant to signal conditioning and processing functions for sensors in down-well and aero-engine applications. The endurance studies have been carried out for up to 7,056 hours at 250°C, with functioning devices being tested periodically at room temperature, 125°C and 250°C. Different die attach and wire bond options have been included in the study and the performance of multiplexers, transistors, bandgap voltage, oscillators and voltage regulators functional blocks have been characterised. This work formed part of the UPTEMP project which was set-up with support from UK Technology Strategy Board and the EPSRC. The project brought together a consortium of end-users (Sondex Wireline and Vibro-Meter UK), electronic module manufacturers (GE Aviation Systems Newmarket) and material suppliers (Gwent Electronic Materials and Thermastrate Ltd) with Oxford University-Materials Department, the leading UK high temperature electronics research centre.

Application of High Temperature Electronics Packaging Technology to Signal Conditioning and Processing Circuits

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000089-000096 ◽  
Author(s):  
S T Riches ◽  
K Cannon ◽  
C Johnston ◽  
M Sousa ◽  
P Grant ◽  
...  
Keyword(s):  
High Temperature ◽  
Printed Circuit Boards ◽  
High Pressures ◽  
Electronic Materials ◽  
Silicon On Insulator ◽  
Research Centre ◽  
Circuit Boards ◽  
Signal Conditioning ◽  
Metal Substrates ◽  
High Temperature Electronics

The requirement to install electronic power and control systems in high temperature environments has posed a challenge to the traditional limit of 125°C for high temperature exposure of electronics systems. The leap in operating temperature to above 200°C in combination with high pressures, vibrations and potentially corrosive environments means that different semiconductors, passives, circuit boards and assembly processes will be needed to fulfil the target performance specifications. Bare die mounted onto ceramic and insulated metal substrates can withstand higher temperatures than soldered surface mount devices on printed circuit boards. The results of the evaluation of electronic interconnect and substrate materials that have been submitted to temperatures of 250°C for up to 2000 hours will be presented, including details on novel adhesive formulations and high temperature insulated metal substrates. The materials and processes developed have been applied to the manufacture of high temperature circuits representative of analogue signal conditioning and processing, using silicon on insulator devices and passive components mounted into HTCC packages and onto thick film on ceramic substrates. Results of the characterisation of these devices and circuits at temperatures of 250°C for up to 2000 hours will be presented. This work forms part of the UPTEMP project has been set-up with support from UK Technology Strategy Board and the EPSRC, which started in March 2007 with 3 years duration. The project brings together a consortium of end-users (Sondex Wireline and Vibro-Meter UK), electronic module manufacturers (GE Aviation Systems Newmarket) and material suppliers (Gwent Electronic Materials and Thermastrate Ltd) with Oxford University-Materials Department, the leading UK high temperature electronics research centre.

Effectiveness of Barrier Layer Metallizations in Long Term High Temperature Endurance Tests on Wire Bond Interconnections

2013 ◽  
Vol 10 (4) ◽  
pp. 163-170
Author(s):  
S. T. Riches ◽  
C. Johnston ◽  
A. Lui
Keyword(s):  
High Temperature ◽  
Barrier Layer ◽  
Failure Modes ◽  
Critical Factor ◽  
Silicon On Insulator ◽  
Wire Bond ◽  
Soi Devices ◽  
Operating Temperatures ◽  
Temperature Storage

Silicon on insulator (SOI) device technology has been shown to be capable of functioning satisfactorily at operating temperatures of >200°C, with device lifetimes of 5 y at 225°C being declared. One of the key areas governing the lifetime of the packaged electronic devices is the reliability of the wire bond interconnection between the device and the package or substrate connection. Extended temperature storage testing at 250°C of packaged SOI devices has highlighted end of life failure modes associated with wire bond connections. SOI devices are normally supplied with an aluminum based bond pad metallization, which are not suitable for direct connection of Au wire at operating temperatures of >125°C, due to the formation of Au-Al intermetallics. It is possible to postprocess silicon wafers to deposit barrier and connection materials to create a monometallic Au-Au joint at the surface. For long term endurance at temperatures >200°C, the effectiveness of the barrier layer in preventing diffusion of the aluminum bond pad metallization to interact with the Au is a critical factor. This paper presents results of studies carried out on two postprocess metallization systems Au/TiW and Au/Pd/Ni deposited onto aluminum bond pads, which have been Au wire bonded and exposed to 250°C temperature storage for up to 13,000 h. The results have shown that the barrier layers are not effective in preventing diffusion of the aluminum bond pad metallization to create Au-Al based intermetallics. The results are compared with Al-1%Si wire bonding to the aluminum bond pad, where the second wedge bond is attached to a Au/Ni plated metallization, where the degradation appears to be less severe. Recommendations for designing stable wire bond interconnection systems for extended high temperature operation will be presented.

Implementation of Silicon-on-Insulator (SOI) Control Electronics to Accelerometers for High Temperature Applications

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000233-000237
Author(s):  
S T Riches ◽  
I White ◽  
G Rickard ◽  
G Chadwick
Keyword(s):  
High Temperature ◽  
High Pressures ◽  
Silicon On Insulator ◽  
Signal Conditioning ◽  
Well Drilling ◽  
Sensing Applications ◽  
Wide Range ◽  
Aero Engine ◽  
Transducer Output ◽  
Piezo Electric

The requirement to install control systems integrated with sensors in high temperature environments has posed a challenge to the traditional limit of 125°C for conventional electronics. There is a need to operate at temperatures of 200°C and above in restricted space for example in down-well, aero-engine or geothermal applications in combination with high pressures, vibrations and potentially corrosive environments. Piezo-electric accelerometers based on ferro-electric ceramics have been used in a wide range of applications for measuring vibrations, fluid flow and turbulence and are capable of operating as a transducer alone at temperatures up to 250°C, which has made them attractive in sensing applications for down-well drilling and aero-engine health and usage monitoring. However, the electronics traditionally used to carry out the signal conditioning and processing (e.g. charge to voltage conversion, filtering) has been limited to a qualification limit of 125°C, which results in a reduced sensitivity of the transducer output as the signal conditioning and processing cannot be performed close to the sensor. With the development of Silicon-On-Insulator (SOI) semiconductor technology, which can operate at temperatures of up to 250°C, many of the signal conditioning and processing operations can be carried out in-situ with the accelerometers to create a new generation of high temperature products. In addition, the integration of many of the functions that used to require discrete components into one SOI based device has led to further miniaturisation opportunities and a protection against obsolescence of specialist analogue devices. This paper will describe the migration of the traditional low temperature electronics to a high temperature SOI based ASIC device and the implementation of high temperature electronics packaging technology to instrumentation for piezo-electric accelerometers, leading to products that are suitable for high temperature monitoring in restricted spaces in down-well drilling and aero-engine applications.

Effectiveness of Barrier Layer Metallisations in Long Term High Temperature Endurance Tests on Wire Bond Interconnections

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000229-000236
Author(s):  
S T Riches ◽  
C Johnston ◽  
A Lui
Keyword(s):  
High Temperature ◽  
Barrier Layer ◽  
Failure Modes ◽  
Silicon On Insulator ◽  
Post Process ◽  
Wire Bond ◽  
Soi Devices ◽  
Operating Temperatures ◽  
Temperature Storage

Silicon on Insulator (SOI) device technology has been shown to be capable of functioning satisfactorily at operating temperatures of >200°C, with device lifetimes of 5 years at 225°C being declared. One of the key areas governing the lifetime of the packaged electronic devices is the reliability of the wire bond interconnection between the device and the package or substrate connection. Extended temperature storage testing at 250°C of packaged SOI devices has highlighted end of life failure modes associated with wire bond connections. SOI devices are normally supplied with an aluminium based bond pad metallisation, which are not suitable for direct connection of Au wire at operating temperatures of >125°C, due to the formation of Au-Al intermetallics. It is possible to post-process silicon wafers to deposit barrier and connection materials to create a mono-metallic Au-Au joint at the surface. For long term endurance at temperatures >200°C, the effectiveness of the barrier layer in preventing diffusion of the aluminium bond pad metallisation to interact with the Au is a critical factor. This paper presents results of studies carried out on two post-process metallisation systems Au/TiW and Au/Pd/Ni deposited onto aluminium bond pads, which have been Au wire bonded and exposed to 250°C temperature storage for up to 13,000 hours. The results have shown that the barrier layers are not effective in preventing diffusion of the aluminium bond pad metallisation to create Au-Al based intermetallics. The results are compared with Al-1%Si wire bonding to the aluminium bond pad, where the 2nd wedge bond is attached to a Au/Ni plated metallisation, where the degradation appears to be less severe. Recommendations for designing stable wire bond interconnection systems for extended high temperature operation will be presented.

Assessment of MEMS Vibration Energy Harvesting for High Temperature Sensing Applications

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000261-000265
Author(s):  
S T Riches ◽  
K Doyle ◽  
N Tebbit ◽  
Y Jia ◽  
A Seshia
Keyword(s):  
High Temperature ◽  
Energy Harvesting ◽  
Temperature Sensing ◽  
Vibration Energy ◽  
Mems Devices ◽  
Vibration Energy Harvesting ◽  
High Temperature Electronics ◽  
Sensing Applications ◽  
Aero Engine ◽  
Energy Harvesting Devices

Distributed electronics for improving the accuracy of sensing in harsh high temperature environments, such as aero-engine and down-well is a growing field, where reduced power input requirements in cabling and batteries is viewed a key enabler for accelerating the adoption of high temperature electronics. Although batteries are available that can operate up to 200°C, they offer limited life at high temperatures and are bulky, increasing the costs of deployment and maintenance. Cabling also adds weight and takes up space in limited access applications. Energy harvesting in-situ offers the opportunity to make a step change in the design of high temperature electronics modules and in expanding their possible range of applications; for example, in sensor systems for combustor and turbine monitoring in aero-engines. This paper covers an assessment of MEMS vibration energy harvesting technology for high temperature sensing applications. MEMS devices based on the principle of parametric resonance, using AlN on Silicon have been designed and fabricated, along with sourcing of high temperature components for rectification, impedance matching and energy storage. The MEMS devices have been packaged into ceramic chip carriers and measured for energy output from a random vibration profile representative of an aerospace application. The measured output from the MEMS vibration energy harvester is capable of providing sufficient power to be of interest for autonomous sensing applications. This paper reports on the performance of the MEMS vibration energy harvesting devices and their associated circuitry at room temperature and at temperatures of up to 150°C. The challenges remaining to develop robust energy harvesting devices that could be applied in aero-engine, down-well and other high temperature applications are described. This work has been carried out under the Innovate UK supported project HI-VIBE, in a collaboration between GE Aviation Systems – Newmarket and the University of Cambridge.

High Temperature Reliability Investigations of EEPROM Memory Cells Realised in Silicon-on-Insulator (SOI) Technology

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000221-000225 ◽  
Author(s):  
K. Grella ◽  
H. Vogt ◽  
U. Paschen
Keyword(s):  
High Temperature ◽  
Data Storage ◽  
Oxide Thickness ◽  
Silicon On Insulator ◽  
Measurement Information ◽  
Cmos Process ◽  
High Temperature Electronics ◽  
Increasing Demand ◽  
Single Poly Eeprom ◽  
Application Fields

Microelectronic manufacturing progresses not only towards further miniaturisation, but also application fields tend to become more and more diverse. Recently there has been an increasing demand for electronic devices and circuits that function in harsh environments such as high temperatures. Under these conditions, reliability aspects are highly critical and testing remains a great challenge. A versatile CMOS process based on 200 mm thin film Silicon-on-Insulator (SOI) wafers is in production at Fraunhofer IMS. It features three layers of tungsten metallisation for optimum electromigration reliability, voltage independent capacitors, high resistance resistors and single-poly-EEPROM cells. Non-volatile memories such as EEPROMs are a key technology that enables flexible data storage, for example of calibration and measurement information. The reliability of these devices is especially crucial in high temperature applications since charge loss is drastically increased in this case. The behaviour of single-poly-EEPROM cells, produced in the process described before, was evaluated up to 450 °C. Data retention tests at temperatures ranging from 160 °C to 450 °C and write/erase cycling tests up to 400 °C were performed. The dependence of write/erase cycling on both temperature and tunnel oxide thickness was studied. These data provide an important foundation to extend the application of high temperature electronics to its maximum limits. The results show that EEPROM cells can be used for special applications even at temperatures higher than 250 °C.

Trends in Automotive Packaging

2014 ◽  
Vol 2014 (DPC) ◽  
pp. 001818-001850 ◽  
Author(s):  
Glenn G. Daves
Keyword(s):  
High Temperature ◽  
Aircraft Engine ◽  
Silicon On Insulator ◽  
Maximum Temperature ◽  
Automotive Electronics ◽  
Sensor Signal ◽  
Signal Conditioning ◽  
Crystal Oscillator ◽  
Term Operation ◽  
High Temperature Electronics

The long-term trend in automobiles has been increasing electronics content over time. This trend is expected to continue and drives diverse functional, form factor, and reliability requirements. These requirements, in turn, are leading to changes in the package types selected and the performance specifications of the packages used for automotive electronics. Several examples will be given. This abstract covers the development of a distributed high temperature electronics demonstrator for integration with sensor elements to provide digital outputs that can be used by the FADEC (Full Authority Digital Electronic Control) system or the EHMS (Engine Health Monitoring System) on an aircraft engine. This distributed electronics demonstrator eliminates the need for the FADEC or EHMS to process the sensor signal, which will assist in making the overall system more accurate and efficient in processing only digital signals. This will offer weight savings in cables, harnesses and connector pin reduction. The design concept was to take the output from several on-engine sensors, carry out the signal conditioning, multiplexing, analogue to digital conversion and data transmission through a serial data bus. The unit has to meet the environmental requirements of DO-160 with the need to operate at 200°C, with short term operation at temperatures up to 250°C. The work undertaken has been to design an ASIC based on 1.0 μm Silicon on Insulator (SOI) device technology incorporating sensor signal conditioning electronics for sensors including resistance temperature probes, strain gauges, thermocouples, torque and frequency inputs. The ASIC contains analogue multiplexers, temperature stable voltage band-gap reference and bias circuits, ADC, BIST, core logic, DIN inputs and two parallel ARINC 429 serial databuses. The ASIC was tested and showed to be functional up to a maximum temperature of 275°C. The ASIC has been integrated with other high temperature components including voltage regulators, a crystal oscillator, precision resistors, silicon capacitors within a hermetic hybrid package. The hybrid circuit has been assembled within a stainless steel enclosure with high temperature connectors. The high temperature electronics demonstrator has been demonstrated operating from −40°C to +250°C. This work has been carried out under the EU Clean Sky HIGHTECS project with the Project being led by Turbomeca (Fr) and carried out by GE Aviation Systems (UK), GE Research – Munich (D) and Oxford University (UK).

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