SYSTEMATIC FEEDBACK LOOP FOR SILICON DIE PICK&PLACE PROCESS IN RECONSTITUTED FAN-OUT EWLB WAFERS IN HIGH VOLUME PRODUCTION

2012 ◽  
Vol 2012 (1) ◽  
pp. 000201-000208 ◽  
Author(s):  
Alberto Martins ◽  
Nelson Pinho ◽  
Harald Meixner
Keyword(s):  
Feedback Loop ◽  
High Volume ◽  
Data Availability ◽  
Wafer Level ◽  
Wafer Level Packaging ◽  
Wafer Thickness ◽  
High Volume Production ◽  
Cte Mismatch ◽  
Volume Production ◽  
The Impact

NANIUM S.A. Portugal recently started producing eWLB fan-out [1][2] wafer level packaging technology on 300mm reconstituted wafers. Initial setup of this process demonstrated that the stable die Pick&Place accuracy plays a key role for product feasibility. In the subsequent volume production ramp-up it became apparent that the dynamic expansion of molded eWLB wafers, caused by thermal stress and CTE mismatch throughout the thin film redistribution and passivation layer up to bumping and reflow manufacturing processes requires a very tight die position monitoring over the complete wafer diameter. Feedback loop to the initial die placement and implementation of correction measures is essential to meet the quality and yield targets of different product configurations (die sizes, distance between dies, die thickness, wafer thickness, single die or system-inpackage) in high volume manufacturing. Stability and repeatability is of outermost importance. The paper will discuss the effects seen on the wafer, the monitoring and the strategies for feedback loop process enabling implementation of corrections into the reconstituted wafer before forming the artificial backend wafer by compression molding. The setup of adequate metrology steps throughout the process line supports the control of the various interlayer alignments. The end result is a centered process in the initial Pick&Place and various subsequent lithography steps (Stepper and Mask Aligner). Sustained data availability and processed data visualization made possible the development of an elaborate theoretical model enabling systematic optimizations of machine parameters and material expansion/compression correction factors. The model also permits the immediate visualization of the impact of each machine parameter on the global result.

High Volume Production Growth of GaAs on Silicon Substrates

1986 ◽  
Vol 67 ◽  
Author(s):  
Chris R. Ito ◽  
M. Feng ◽  
V. K. Eu ◽  
H. B. Kim
Keyword(s):  
Schottky Diodes ◽  
High Volume ◽  
Wafer Surface ◽  
Silicon Substrates ◽  
Growth Technique ◽  
Wafer Thickness ◽  
Production Growth ◽  
High Volume Production ◽  
Volume Production ◽  
P Type

ABSTRACTA high-volume epitaxial reactor has been used to investigate the feasibility for the production growth of GaAs on silicon substrates. The reactor is a customized system which has a maximum capacity of 39 three-inch diameter wafers and can accommodate substrates as large as eight inches in diameter. The MOCVD material growth technique was used to grow GaAs directly on p-type, (100) silicon substrates, three and five inches in diameter. The GaAs surfaces were textured with antiphase boundaries. Double-cyrstal rocking curve measurements showed single-cyrstal GaAs with an average FWHMof 520 arc seconds measured at four points over the wafer surface. Within-wafer thickness uniformity was ± 4% with a wafer-to-wafer uniformity of ± 2%. Photoluminescence spectra showed Tour peaks at 1.500, 1.483, 1.464, and 1.440 ev. Schottky diodes were fabricated on the GaAs on silicon material.

Advanced warpage characterization for FOWLP

2013 ◽  
Vol 2013 (1) ◽  
pp. 000641-000646
Author(s):  
Jorge Teixeira ◽  
Mário Ribeiro ◽  
Nélson Pinho
Keyword(s):  
Three Dimensional ◽  
High Volume ◽  
Thermomechanical Properties ◽  
Silicon Wafers ◽  
Wafer Level ◽  
Height Range ◽  
High Volume Production ◽  
Volume Production ◽  
The Mean ◽  
Processing Steps

Current standards for silicon wafers shape characterization use simple metrics. Warpage and bow are computed as the mean surface wafer height range or the mean surface wafer center height, respectively [1]. These metrics are valid for silicon wafers because of their homogenous and linear thermomechanical properties [2]. In fan-out wafer level package (FO-WLP), embedded Wafer Level Ball Grid Array in specific (eWLB), the use of epoxy mold compound that works both as the physical carrier of the dies and as the base of second level connections has a major impact on the overall macroscopic behavior of the wafer, inducing shapes that do not follow a simple bended or bowed wafer, impacting wafer processability [3]. Warped wafers can affect device performance, reliability, and linewidth control in various processing steps [3]. Early detection will minimize cost and processing time. In our research, we present a solution for wafer characterization in FO-WLP by increasing the information vector that one obtains from standard automated non-contact scanning equipment. For this, we defined wafer shape and wafer ratio as the two new metrics besides warpage, creating a three dimensional vector that can be used to compare and evaluate wafers in high volume production or even single wafer analysis. This is a major improvement over previously used approaches, in which only the average warpage is considered. These metrics were determined by the developed numeric algorithm and their validity was demonstrated through the use of different production conditions, wafer constructions and production monitoring. The proposed approach requires no extra processing steps and time, as compared to conventional off-line methods. Experimental results demonstrate its feasibility and repeatability. This methodology was successfully used in the field and proved to be of high value when evaluating wafer geometrical requirements for both product development and process monitoring.

scholarly journals Congener-specific partition properties of chlorinated paraffins evaluated with COSMOtherm and gas chromatographic retention indices

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Jort Hammer ◽  
Hidenori Matsukami ◽  
Satoshi Endo
Keyword(s):  
Chemical Properties ◽  
High Volume ◽  
Retention Indices ◽  
Chromatographic Retention ◽  
Linear Free Energy Relationship ◽  
Linear Free Energy ◽  
Chlorinated Paraffins ◽  
Gas Chromatographic Retention Indices ◽  
High Volume Production ◽  
Volume Production

AbstractChlorinated Paraffins (CPs) are high volume production chemicals and have been found in various organisms including humans and in environmental samples from remote regions. It is thus of great importance to understand the physical–chemical properties of CPs. In this study, gas chromatographic (GC) retention indexes (RIs) of 25 CP congeners were measured on various polar and nonpolar columns to investigate the relationships between the molecular structure and the partition properties. Retention measurements show that analytical standards of individual CPs often contain several stereoisomers. RI values show that chlorination pattern have a large influence on the polarity of CPs. Single Cl substitutions (–CHCl–, –CH2Cl) generally increase polarity of CPs. However, many consecutive –CHCl– units (e.g., 1,2,3,4,5,6-C11Cl6) increase polarity less than expected from the total number of –CHCl– units. Polyparameter linear free energy relationship descriptors show that polarity difference between CP congeners can be explained by the H-bond donating properties of CPs. RI values of CP congeners were predicted using the quantum chemically based prediction tool COSMOthermX. Predicted RI values correlate well with the experimental data (R2, 0.975–0.995), indicating that COSMOthermX can be used to accurately predict the retention of CP congeners on GC columns.

Determination of transverse flexural and shear moduli of chopped carbon fiber tape-reinforced thermoplastic by vibration

2017 ◽  
Vol 52 (3) ◽  
pp. 395-404
Author(s):  
Xiuqi Lyu ◽  
Jun Takahashi ◽  
Yi Wan ◽  
Isamu Ohsawa
Keyword(s):  
Carbon Fiber ◽  
Beam Theory ◽  
Transversely Isotropic ◽  
High Volume ◽  
Bending Test ◽  
Thermoplastic Material ◽  
Shear Moduli ◽  
High Volume Production ◽  
Volume Production

Chopped carbon fiber tape-reinforced thermoplastic material is specifically developed for the high-volume production of lightweight automobiles. With excellent design processability and flexibility, the carbon fiber tape-reinforced thermoplastic material is manufactured by compressing large amounts of randomly oriented, pre-impregnated unidirectional tapes in a plane. Therefore, the carbon fiber tape-reinforced thermoplastic material presents transversely isotropic properties. Transverse shear effect along the thickness direction of carbon fiber tape-reinforced thermoplastic beam has a distinct influence on its flexural deformation. Accordingly, the Timoshenko beam theory combined with vibration frequencies was proposed to determine the set of transverse flexural and shear moduli. Meanwhile, the transverse flexural and shear moduli of carbon fiber tape-reinforced thermoplastic beam were finally determined by fitting all the first seven measured and calculated eigenfrequencies with the least squares criterion. In addition, the suggested thickness to length ratio for the 3-point bending test and Euler–Bernoulli model was given.

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