Package Thickness - Ultrathin WLFO (Wafer-Level Fan-Out)

2016 ◽  
Vol 2016 (1) ◽  
pp. 000305-000308
Author(s):  
Eoin O'Toole ◽  
Steffen Kroehnert ◽  
José Campos ◽  
Virgilio Barbosa ◽  
Leonor Dias

Abstract NANIUM's Fan-Out Wafer-Level Packaging technology WLFO (Wafer-Level Fan-Out) is based on embedded Wafer-Level Ball Grid Array technology eWLB of Infineon Technologies [1]. Since it′s invention almost 10 years ago, it became the leading technology for Fan-Out Wafer-Level packages. The WLFO technology is based upon the reconstitution of KGD (known good die) from incoming device wafer, independent of wafer diameter and material, to recon wafer format of active semiconductor dies or other active/passive components separated by mold compound applied through compression molding on a temporary mold carrier. The resulting recon wafer can be processed in standard wafer processing equipment. One of the challenges for the future of semiconductor packaging is reduction of the board level volume real estate occupied by each component. With the drive towards lower profile end user devices incorporating large display area and battery life the three dimensional space available for semiconductor packages is diminishing. It is well known that WLFO single die packaging but even more significant system integration enables the shrinkage of the XY footprint of the package through flexible very dense heterogeneous system-in-package integration [2]. But one of the disruptive advantages of the substrate-less WLFO technology is to also permit significant reduction of the overall package height (Z). A total package height for a BGA package including solder balls <500um and for a LGA package with solder land pads only <300um is achievable today, and further development towards even thinner packages is on the way.

2006 ◽  
Vol 970 ◽  
Author(s):  
Shi-Wei Ricky Lee ◽  
Ronald Hon

ABSTRACTThe study is a prototype design and fabrication of multi-stacked flip chip three dimensional packaging (3DP) with TSVs for interconnection. Three chips are stacked together to make a 3DP with solder bumped flip chips. TSVs are fabricated and distributed along the periphery of the middle chip. The TSVs are formed by dry etching, deep reactive ions etching (DRIE), with dimensions of 150 × 100 microns. The TSVs are plugged by copper plating. The filled TSVs are connected to the solder pads by extended pad patterns surrounding the top and the bottom of TSVs on both sides of the wafer for the middle chip. After pad patterning passivation and solder bumping, the wafer is sawed into chips for subsequent 3D stacked die assembly. Because the TSVs are located at the periphery of the middle chips and stretch across the saw street between adjacent chips, they will be sawed through their center to form two open TSVs (with half of the original size) for electrical interconnection between the front side and the back side of the middle chip. The top chip is made by the conventional solder bumped flip chip processes and the bottom chip is a carrier with some routing patterns. The three middle chips and top chip are stacked by a flip chip bonder and the solder balls are reflowed to form the 3DP structure. Lead-free soldering and wafer thinning are also implemented in this prototype. In addition to the conceptual design, all wafer level fabrication processes are described and the subsequent die stacking assembly is also presented.


2015 ◽  
Vol 2015 (DPC) ◽  
pp. 000143-000181
Author(s):  
Pascal COUDERC ◽  
Jérôme NOIRAY

Based on Wire free Die on Die disruptive technology (WDoDTM), complex SiPs can be manufactured in a small factor package size. Stacking known good rebuilt wafers allows high yields while integrating high performance devices (1). Wafer processing is done with e-WLB technology and a specific redistribution layer (RDL) is designed to match with 3D PLUS bus metal edge interconnect technology. 300 mm rebuilt wafers are processed and thinned down to 200 μm before stacking and polymer bonding. Bonding alignment is within ±5 μm allowing small lateral pitches demonstrating WDoDTM versatility with denser IO products such as FPGA. Besides, this new process integration scheme allows the stacking of both conventional boards with SMDs not available at wafer level together with rebuilt wafers made of known good dies. WDoDTM technology has been successfully used with different kind of products in the defense and medical markets. A calculator node including a 484 I/O FPGA with 2 mDDR and an EEPROM in addition to more than 150 decoupling capacitors was manufactured and is exhibiting better electrical performance when compared to the 2 dimensions version. Moreover, a medical implant has been successfully developed embedding 2 ASICS and several PICS capacitors allowing an 8 times shrink of the electronics compared to advance lead based pacemakers.. With this new technology, 3D PLUS is highlighting the way to highly integrated System in Package (SiP) and demonstrates its know-how in the three dimensional integration.


Author(s):  
David A. Agard ◽  
Yasushi Hiraoka ◽  
John W. Sedat

In an effort to understand the complex relationship between structure and biological function within the nucleus, we have embarked on a program to examine the three-dimensional structure and organization of Drosophila melanogaster embryonic chromosomes. Our overall goal is to determine how DNA and proteins are organized into complex and highly dynamic structures (chromosomes) and how these chromosomes are arranged in three dimensional space within the cell nucleus. Futher, we hope to be able to correlate structual data with such fundamental biological properties as stage in the mitotic cell cycle, developmental state and transcription at specific gene loci.Towards this end, we have been developing methodologies for the three-dimensional analysis of non-crystalline biological specimens using optical and electron microscopy. We feel that the combination of these two complementary techniques allows an unprecedented look at the structural organization of cellular components ranging in size from 100A to 100 microns.


Author(s):  
K. Urban ◽  
Z. Zhang ◽  
M. Wollgarten ◽  
D. Gratias

Recently dislocations have been observed by electron microscopy in the icosahedral quasicrystalline (IQ) phase of Al65Cu20Fe15. These dislocations exhibit diffraction contrast similar to that known for dislocations in conventional crystals. The contrast becomes extinct for certain diffraction vectors g. In the following the basis of electron diffraction contrast of dislocations in the IQ phase is described. Taking account of the six-dimensional nature of the Burgers vector a “strong” and a “weak” extinction condition are found.Dislocations in quasicrystals canot be described on the basis of simple shear or insertion of a lattice plane only. In order to achieve a complete characterization of these dislocations it is advantageous to make use of the one to one correspondence of the lattice geometry in our three-dimensional space (R3) and that in the six-dimensional reference space (R6) where full periodicity is recovered . Therefore the contrast extinction condition has to be written as gpbp + gobo = 0 (1). The diffraction vector g and the Burgers vector b decompose into two vectors gp, bp and go, bo in, respectively, the physical and the orthogonal three-dimensional sub-spaces of R6.


2004 ◽  
Vol 71 ◽  
pp. 1-14
Author(s):  
David Leys ◽  
Jaswir Basran ◽  
François Talfournier ◽  
Kamaldeep K. Chohan ◽  
Andrew W. Munro ◽  
...  

TMADH (trimethylamine dehydrogenase) is a complex iron-sulphur flavoprotein that forms a soluble electron-transfer complex with ETF (electron-transferring flavoprotein). The mechanism of electron transfer between TMADH and ETF has been studied using stopped-flow kinetic and mutagenesis methods, and more recently by X-ray crystallography. Potentiometric methods have also been used to identify key residues involved in the stabilization of the flavin radical semiquinone species in ETF. These studies have demonstrated a key role for 'conformational sampling' in the electron-transfer complex, facilitated by two-site contact of ETF with TMADH. Exploration of three-dimensional space in the complex allows the FAD of ETF to find conformations compatible with enhanced electronic coupling with the 4Fe-4S centre of TMADH. This mechanism of electron transfer provides for a more robust and accessible design principle for interprotein electron transfer compared with simpler models that invoke the collision of redox partners followed by electron transfer. The structure of the TMADH-ETF complex confirms the role of key residues in electron transfer and molecular assembly, originally suggested from detailed kinetic studies in wild-type and mutant complexes, and from molecular modelling.


Author(s):  
Leiba Rodman

Quaternions are a number system that has become increasingly useful for representing the rotations of objects in three-dimensional space and has important applications in theoretical and applied mathematics, physics, computer science, and engineering. This is the first book to provide a systematic, accessible, and self-contained exposition of quaternion linear algebra. It features previously unpublished research results with complete proofs and many open problems at various levels, as well as more than 200 exercises to facilitate use by students and instructors. Applications presented in the book include numerical ranges, invariant semidefinite subspaces, differential equations with symmetries, and matrix equations. Designed for researchers and students across a variety of disciplines, the book can be read by anyone with a background in linear algebra, rudimentary complex analysis, and some multivariable calculus. Instructors will find it useful as a complementary text for undergraduate linear algebra courses or as a basis for a graduate course in linear algebra. The open problems can serve as research projects for undergraduates, topics for graduate students, or problems to be tackled by professional research mathematicians. The book is also an invaluable reference tool for researchers in fields where techniques based on quaternion analysis are used.


1997 ◽  
Vol 84 (1) ◽  
pp. 176-178
Author(s):  
Frank O'Brien

The author's population density index ( PDI) model is extended to three-dimensional distributions. A derived formula is presented that allows for the calculation of the lower and upper bounds of density in three-dimensional space for any finite lattice.


2019 ◽  
Author(s):  
Jumpei Morimoto ◽  
Yasuhiro Fukuda ◽  
Takumu Watanabe ◽  
Daisuke Kuroda ◽  
Kouhei Tsumoto ◽  
...  

<div> <div> <div> <p>“Peptoids” was proposed, over decades ago, as a term describing analogs of peptides that exhibit better physicochemical and pharmacokinetic properties than peptides. Oligo-(N-substituted glycines) (oligo-NSG) was previously proposed as a peptoid due to its high proteolytic resistance and membrane permeability. However, oligo-NSG is conformationally flexible and is difficult to achieve a defined shape in water. This conformational flexibility is severely limiting biological application of oligo-NSG. Here, we propose oligo-(N-substituted alanines) (oligo-NSA) as a new peptoid that forms a defined shape in water. A synthetic method established in this study enabled the first isolation and conformational study of optically pure oligo-NSA. Computational simulations, crystallographic studies and spectroscopic analysis demonstrated the well-defined extended shape of oligo-NSA realized by backbone steric effects. The new class of peptoid achieves the constrained conformation without any assistance of N-substituents and serves as an ideal scaffold for displaying functional groups in well-defined three-dimensional space, which leads to effective biomolecular recognition. </p> </div> </div> </div>


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