Operation of Silicon Carbide Integrated Circuits under High Temperature and Pressure

Abstract Silicon carbide integrated circuits have demonstrated the ability to function at temperatures as high as 600 °C for extended periods of time. Many environments where high temperature in-situ electronics are desired also have large pressures as well. While some validation has been done for high pressure environments, limited information on the parametric impact of pressure on SiC integrated circuits is available. This paper takes two leading-edge SiC integrated circuit processes using two different classes of devices (JFET and CMOS), and measures the performance through temperature and pressure variation. Circuit functionality was verified at high temperature (475 °C) as well as high pressure (1700 psig).

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In situ neutron diffraction study of the formation of Ho2Ge2O7 pyrochlore at high temperature and pressure

Dalton Transactions ◽

10.1039/c7dt03370b ◽

2017 ◽

Vol 46 (44) ◽

pp. 15415-15423 ◽

Cited By ~ 5

Author(s):

Helen Y. Playford ◽

Craig L. Bull ◽

Matthew G. Tucker ◽

Nicholas P. Funnell ◽

Christopher J. Ridley ◽

...

Keyword(s):

High Pressure ◽

High Temperature ◽

Neutron Diffraction ◽

Diffraction Study ◽

Neutron Diffraction Study ◽

High Temperature And Pressure ◽

Temperature And Pressure ◽

In Situ Neutron Diffraction ◽

High Temperature High Pressure

The formation of the spin-ice pyrochlore Ho2Ge2O7 by two different high temperature, high pressure routes has been explored using in situ neutron diffraction.

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High Temperature and High Pressure ESP Performance Testing System Design

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.457-458.423 ◽

2013 ◽

Vol 457-458 ◽

pp. 423-427

Author(s):

Xiao Qing Li ◽

Xiao Yan Liu

Keyword(s):

High Pressure ◽

High Temperature ◽

Heat Exchange ◽

Liquid State ◽

Constant Pressure ◽

Hot Water ◽

Testing System ◽

Friction Resistance ◽

High Temperature And Pressure ◽

Temperature And Pressure

With the development of oilfield exploration, the performance of electric submersible pump (ESP) has been enhanced very fast. It requires testing techniques develop at the same time. The most outstanding question is the testing of high temperature and pressure ESP. A testing well was drilled in Daqing in 1992. It keeps the water liquid state on 150 centigrade by high pressure. This system can simulate operational mode 3000 meters under the ground. But many new ESPs have been produced these years. The quondam testing system couldnt meet the testing requirement. A new testing system is desiderated eagerly. This paper developed a high temperature and pressure ESP testing experimentation system. Hydraulic/thermodynamic analysis calculation has been carried on. Friction resistance from constant pressure point to the suction inlet of hot water pump and the ESP in heating-forced cycle and experimentation primary cycle are calculated respectively. Keeping the water liquid state on 180 centigrade, constant pressure value was fixed on 2.5 MPa. The heat load is calculated including the heat that the water in the system and the equipment need and the heat loss. In order to protect ESP from emanating too much heat to keep the temperature and pressure of the system steady, heat exchange system has been designed. Cold load and heat exchange square have been calculated. Friction resistance and the size of the cold water cistern have been calculated. These provide necessary academic foundation for the testing experimentation of high temperature and pressure ESP.

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Lightning-induced high temperature and pressure microstructures in surface and subsurface fulgurites

Scientific Reports ◽

10.1038/s41598-021-01559-x ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

Li-Wei Kuo ◽

Steven A. F. Smith ◽

Chien-Chih Chen ◽

Ching-Shun Ku ◽

Ching-Yu Chiang ◽

...

Keyword(s):

High Pressure ◽

High Temperature ◽

Reference Sample ◽

Near Surface ◽

Landing Point ◽

High Pressure Metamorphism ◽

High Temperature And Pressure ◽

Cloud To Ground Lightning ◽

Temperature And Pressure ◽

First Time

AbstractCloud-to-ground lightning causes both high-temperature and high-pressure metamorphism of rocks, forming rock fulgurite. We demonstrate that a range of microstructural features indicative of high temperatures and pressures can form in fulgurites at the surface and in fractures up to several meters below the surface. In comparison to a granite reference sample collected from a borehole at a depth of 138 m, microstructures in both the surface and fracture fulgurite are characterized by: (i) the presence of glass, (ii) a phase transformation in K-feldspar with the presence of exsolution lamellae of plagioclase, and (iii) high residual stresses up to 1.5 GPa. Since this is the first time that fracture-related fulgurite has been described, we also carried out a 1-D numerical model to investigate the processes by which these can form. The model shows that the electric current density in fractures up to 40 m from the landing point can be as high as that on the surface, providing an explanation for the occurrence of fracture-related fulgurites. Our work broadens the near-surface environments in which rock fulgurite has been reported, and provides a detailed description of microstructures that can be compared to those formed during other types of extreme metamorphic events.

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Digital and Analogue Integrated Circuits in Silicon Carbide for High Temperature Operation

Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) ◽

10.4071/hitec-thp11 ◽

2012 ◽

Vol 2012 (HITEC) ◽

pp. 000373-000377 ◽

Cited By ~ 5

Author(s):

E.P Ramsay ◽

D.T. Clark ◽

J.D. Cormack ◽

A.E. Murphy ◽

D.A Smith ◽

...

Keyword(s):

Silicon Carbide ◽

High Temperature ◽

Integrated Circuits ◽

Integrated Circuit ◽

Nand Gate ◽

Cmos Process ◽

Flip Flop ◽

Aero Engines ◽

Simple Logic ◽

High Temperature Operation

A need for high temperature integrated circuits is emerging in a number of application areas. As Silicon Carbide power discrete devices become more widely available, there is a growing need for control ICs capable of operating at the same temperatures and mounted on the same modules. Also, the use of high temperature sensors, in, for example, aero engines and in deep hydrocarbon and geothermal drilling applications results in a demand for high temperature sensor interface ICs. This paper presents new results on a range of simple logic and analogue circuits fabricated on a developing Silicon Carbide CMOS process which is intended for mixed signal integrated circuit applications such as those above. A small family of logic circuits, pin compatible with the 74xx series TTL logic parts, has been designed, fabricated and tested and includes, for example, a Quad Nand gate and a Dual D-type flip-flop. These have been found to be functional from room temperature up to 400°C. Analogue blocks have been investigated with a view to using switched capacitor or autozero techniques to compensate for temperature and time induced drifts, allowing very high temperature operation.

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