scholarly journals Room Temperature Aging Effects on Porous Silicon Layer Chemical Bonds.

1998 ◽  
Vol 49 (1) ◽  
pp. 63-67 ◽  
Author(s):  
Yoshio FUKUDA ◽  
Kazuo FURUYA
2015 ◽  
Vol 515 ◽  
pp. 54-61 ◽  
Author(s):  
А.V. Fetisov ◽  
G.А. Kozhina ◽  
S.Kh. Estemirova ◽  
V.Ya. Mitrofanov

Author(s):  
Hongtao Ma ◽  
Jeffrey C. Suhling ◽  
Pradeep Lall ◽  
Michael J. Bozack

Solder materials demonstrate evolving microstructure and mechanical behavior that changes significantly with environmental exposures such as isothermal aging and thermal cycling. These aging effects are greatly exacerbated at higher temperatures typical of thermal cycling qualification tests for harsh environment electronic packaging. In the current study, mechanical measurements of thermal aging effects and material behavior evolution of lead free solders have been performed. Extreme care has been taken so that the fabricated solder uniaxial test specimens accurately reflect the solder materials present in actual lead free solder joints. A novel specimen preparation procedure has been developed where the solder uniaxial test specimens are formed in high precision rectangular cross-section glass tubes using a vacuum suction process. The tubes are then sent through a SMT reflow to re-melt the solder in the tubes and subject them to any desired temperature profile (i.e. same as actual solder joints). Using specimens fabricated with the developed procedure, isothermal aging effects and viscoplastic material behavior evolution have been characterized for 95.5Sn4.0Ag-0.5Cu (SAC405) and 96.5Sn-3.0Ag-0.5Cu (SAC305) lead free solders, which are commonly used as the solder ball alloy in lead free BGAs and other components. Analogous tests were performed with 63Sn-37Pb eutectic solder samples for comparison purposes. In our total experimental program, samples have been solidified with both reflowed and water quenching temperature profiles, and isothermal aging has been performed at room temperature (25 °C) and elevated temperatures (100 °C, 125 °C and 150 °C). In this paper, we have concentrated on reporting the results of the room temperature aging experiments. Variations of the temperature dependent mechanical properties (elastic modulus, yield stress, ultimate strength, creep compliance, etc.) were observed and modeled as a function of room temperature aging time. Microstructural changes during. room temperature aging have also been recorded for the solder alloys and correlated with the observed mechanical behavior changes.


2012 ◽  
Vol 512-515 ◽  
pp. 43-46
Author(s):  
Guo Feng Ma ◽  
Hong Ling Zhang ◽  
Xue Fei Yang

The Ag-assisted electroless etching of p-type silicon substrate in HF/H2O2solution at room temperature was investigated. The porous silicon layer was formed in a mixed solution of H2O2and HF by using screen-printed Ag front electrodes as the catalyst. And influence of the different concentration etching solution (HF and AgNO3) on the porous silicon layer was study by scanning electron microscopy (SEM). Through investigation of the track of catalyst particles, it was shown that Ag really catalyses the etching of silicon underneath Ag particle.


2020 ◽  
Vol 12 (4) ◽  
pp. 04020-1-04020-5
Author(s):  
A. P. Oksanich ◽  
◽  
S. E. Pritchin ◽  
M. A. Mashchenko ◽  
A. Yu. Bobryshev ◽  
...  

2017 ◽  
Vol 68 (7) ◽  
pp. 53-57 ◽  
Author(s):  
Martin Kopani ◽  
Milan Mikula ◽  
Daniel Kosnac ◽  
Jan Gregus ◽  
Emil Pincik

AbstractThe morphology and chemical bods of p-type and n-type porous Si was compared. The surface of n-type sample is smooth, homogenous without any features. The surface of p-type sample reveals micrometer-sized islands. FTIR investigation reveals various distribution of SiOxHycomplexes in both p-and n-type samples. From the conditions leading to porous silicon layer formation (the presence of holes) we suggest both SiOxHyand SiFxHycomplexes in the layer.


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