A High Performance Structure Identification Environment

Author(s):  
K.M. Bossley ◽  
M.C. Sell ◽  
N.K. Allsopp
1991 ◽  
Vol 240 ◽  
Author(s):  
Junko Asano ◽  
Yoshiaki Yazawa

ABSTRACTThe Light-emitting diode (LED) structures have been investigated to realize high-performance LEDs on Si substrates. The light intensity of the LEDs with p-GaAs / n-GaAs / Si structures, which was effected from thickness of the p-GaAs layer, was only about 55% of the homoepitaxialLED. The light intensity of the LED with an n-GaAs/p-GaAs/Si structure, however, was about four times stronger than those of p-GaAs/n-GaAs/Si structures. After continuous operation for two hours, the intensity still kept much stronger than those of the LEDs with p-GaAs / n-GaAs / Si structures, although it decreased to 15% of the homoepitaxial LED.


AIP Advances ◽  
2018 ◽  
Vol 8 (7) ◽  
pp. 075316 ◽  
Author(s):  
Hirotaka Inoue ◽  
Takayuki Yoshiyama ◽  
Masaki Hada ◽  
Daiki Chujo ◽  
Yoshitaka Saito ◽  
...  

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