scholarly journals RNA-seq reveals the downregulated proteins related to photosynthesis in growth-inhibited rice seedlings induced by low-energy N+ beam implantation

2014 ◽  
Vol 13 (3) ◽  
pp. 7029-7036 ◽  
Author(s):  
Q.F. Chen ◽  
H.Y. Ya ◽  
W.D. Wang ◽  
Z. Jiao
Keyword(s):  
Low Energy ◽  
Rna Seq ◽  
Rice Seedlings

Pathway Analysis of the Restrictedly Expressed Genes in Oryza Sativa Implanted by the Low-Energy Nitrogen Ion

2011 ◽  
Vol 108 ◽  
pp. 176-182
Author(s):  
Hui Yuan Ya ◽  
Wei Dong Wang ◽  
Qiu Fang Chen ◽  
Guang Yong Qin ◽  
Zhen Jiao ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Molecular Mechanism ◽  
Current Knowledge ◽  
Biological Effects ◽  
Ion Beam ◽  
Low Energy ◽  
P Value ◽  
Rice Seedlings ◽  
Vigor Index ◽  
Nitrogen Ion

The current knowledge of the transcriptome is limited to understand the exact molecular mechanism of the ion-implantation biological effects on cereals. In order to investigating the overall characteristics of the transcript profiles associated with these puzzling biological effects. We used the Agilent Rice Oligo Microarray （4×44K）Genome Array to learn the molecular mechanism in rice responding to ion-implantation. Rice seeds were implanted by the Nitrogen ion beam and their vigor index was investigated at ten days after germination. Total RNAs was extracted from the rice seedlings at 96 hour after germination and hybridized by the genome genechip. The results of measuring of the vigor index showed that lower-dose implantation of the nitrogen ion beam (6×1017 N+/cm2) promoted the vigor index of the rice seedlings and the higher-dose implantation (9×1017 N+/cm2) damaged the rice seedlings because of the smaller vigor index than the control. The analysis of the genechip array showed that there were 982 transcripts expressed differentially (fold change＞2 and P value＜0.05) including 429 up-regulated transcripts and 553 down-regulated transcripts under the dose3 6×1017 N+/cm2. 30 out of the 553 down-regulated transcripts were involved in 48 pathways. 14 out of these 30 transcripts were associated with more than two interrelated pathways. Os04g0518400 (Phenylalanine ammonia-lyase 2 (PAL; EC 4.3.1.5; down-regulated 3.3 folds; p value=0.005) were involved in 7 pathways, Os07g0446800 (Hexokinase; dwon-regulated 2.8 folds; p value =0.006) were involved in 12 pathways, and Os02g0730000 (Mitochondrial aldehyde dehydrogenase ALDH2a; down-regulated 2.2 folds; p value=0.019) were involved in 13 pathways. These results revealed that down-regulated genes involving important pathways were compatible with the distinct cellular events in response to implantation of low-energy ion beam and supplied the first comprehensive and comparative molecular information for further understanding the mechanism underlying implantation of the low-energy nitrogen ion beam.

Transcriptome Profiling of Retarded-Growth Rice Seedlings Induced by Low-Energy N+ Beam Implantation

2016 ◽  
Vol 16 (7) ◽  
pp. 7024-7029
Author(s):  
Yanwei Cheng ◽  
Gaofeng Liang ◽  
Weidong Wang ◽  
Huiyuan Ya
Keyword(s):  
Transcriptome Profiling ◽  
Low Energy ◽  
Rice Seedlings ◽  
Retarded Growth

scholarly journals Silicon Modulates Molecular and Physiological Activities in Lsi1 Transgenic and Wild Rice Seedlings under Arsenic Stress

Agronomy ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1532
Author(s):  
Mohammad Reza Boorboori ◽  
Wenxiong Lin ◽  
Yanyang Jiao ◽  
Changxun Fang
Keyword(s):  
Calcium Binding ◽  
Dry Weight ◽  
Silicon Concentration ◽  
Rna Seq ◽  
Wild Type ◽  
Rice Seedlings ◽  
Rnai Line ◽  
Overexpression Line ◽  
Arsenic Stress ◽  
Hydroponic Conditions

Arsenic is one of the most dangerous metalloids, and silicon is a helpful element supporting plants to withstand stress. In this study, three factors were considered, including rice accessions with three different lines, including Lsi1-RNAi line (LE-R), Lsi1 overexpression line (LE-OE), and their wild type (LE-WT), and silicon and arsenic treatments with two different levels. Analysis of variance in dry weight biomass, protein content, arsenic, and silicon concentration has shown a significant interaction between three factors. Further analysis showed that the silicon concentration of all rice seedlings under silicon treatments increased significantly. The LE-OE line has shown a higher ability to absorb silicon in hydroponic conditions than the wild type, and when the seedlings were exposed to arsenic, the concentration of arsenic in all lines increased significantly. Adding silicon to over-expressed rice lines with the Lsi1 gene creates better arsenic resistance than their wild type. These findings confirmed antagonism between silicon and arsenic, and seedlings exposed to arsenic showed a reduction in silicon concentration in all rice lines. RNA-seq analysis showed 106 differentially expressed genes in the LE-OE line, including 75 up-regulated genes and 31 down-regulated genes. DEGs in the LE-R line were 449 genes, including 190 up-regulated and 259 down-regulated genes. Adding treatment has changed the expression of Calcium-binding EGF domain-containing, Os10g0530500, Os05g0240200 in both LE-OE and LE-R roots. They showed that transgenic cultivars were more resistant to arsenic than wild-type, especially when silicon was added to the culture medium.

Dissociated Σ=27 boundaries in silicon

1988 ◽  
Vol 46 ◽  
pp. 624-625
Author(s):  
A. Garg ◽  
W.A.T. Clark ◽  
J.P. Hirth
Keyword(s):  
Electron Diffraction ◽  
Local Minimum ◽  
Boundary Energy ◽  
Coincidence Site Lattice ◽  
Boundary Plane ◽  
Low Energy ◽  
Theoretical Understanding ◽  
Site Lattice ◽  
Kikuchi Pattern ◽  
Analysis Techniques

In the last twenty years, a significant amount of work has been done in the theoretical understanding of grain boundaries. The various proposed grain boundary models suggest the existence of coincidence site lattice (CSL) boundaries at specific misorientations where a periodic structure representing a local minimum of energy exists between the two crystals. In general, the boundary energy depends not only upon the density of CSL sites but also upon the boundary plane, so that different facets of the same boundary have different energy. Here we describe TEM observations of the dissociation of a Σ=27 boundary in silicon in order to reduce its surface energy and attain a low energy configuration.The boundary was identified as near CSL Σ=27 {255} having a misorientation of (38.7±0.2)°/[011] by standard Kikuchi pattern, electron diffraction and trace analysis techniques. Although the boundary appeared planar, in the TEM it was found to be dissociated in some regions into a Σ=3 {111} and a Σ=9 {122} boundary, as shown in Fig. 1.

Transfer optics for high spatial resolution electron spectroscopy

1988 ◽  
Vol 46 ◽  
pp. 666-667
Author(s):  
G. G. Hembree ◽  
Luo Chuan Hong ◽  
P.A. Bennett ◽  
J.A. Venables
Keyword(s):  
Magnetic Field ◽  
Scanning Transmission Electron Microscope ◽  
Low Energy ◽  
Objective Lens ◽  
State University ◽  
Arizona State University ◽  
Initial Field ◽  
Resolution Electron ◽  
Scanning Transmission ◽  
Low Energy Electrons

A new field emission scanning transmission electron microscope has been constructed for the NSF HREM facility at Arizona State University. The microscope is to be used for studies of surfaces, and incorporates several surface-related features, including provision for analysis of secondary and Auger electrons; these electrons are collected through the objective lens from either side of the sample, using the parallelizing action of the magnetic field. This collimates all the low energy electrons, which spiral in the high magnetic field. Given an initial field Bi∼1T, and a final (parallelizing) field Bf∼0.01T, all electrons emerge into a cone of semi-angle θf≤6°. The main practical problem in the way of using this well collimated beam of low energy (0-2keV) electrons is that it is travelling along the path of the (100keV) probing electron beam. To collect and analyze them, they must be deflected off the beam path with minimal effect on the probe position.

Performance Evaluation of a Novel Type of Low-Energy Electron Microscope

1990 ◽  
Vol 48 (1) ◽  
pp. 354-355
Author(s):  
Bertholdand Senftinger ◽  
Helmut Liebl
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Field Strength ◽  
Numerical Aperture ◽  
Low Energy ◽  
Energy Electron ◽  
High Resolution Imaging ◽  
Lens System ◽  
Resolution Imaging ◽  
Low Energy Electron

During the last few years the investigation of clean and adsorbate-covered solid surfaces as well as thin-film growth and molecular dynamics have given rise to a constant demand for high-resolution imaging microscopy with reflected and diffracted low energy electrons as well as photo-electrons. A recent successful implementation of a UHV low-energy electron microscope by Bauer and Telieps encouraged us to construct such a low energy electron microscope (LEEM) for high-resolution imaging incorporating several novel design features, which is described more detailed elsewhere.The constraint of high field strength at the surface required to keep the aberrations caused by the accelerating field small and high UV photon intensity to get an improved signal-to-noise ratio for photoemission led to the design of a tetrode emission lens system capable of also focusing the UV light at the surface through an integrated Schwarzschild-type objective. Fig. 1 shows an axial section of the emission lens in the LEEM with sample (28) and part of the sample holder (29). The integrated mirror objective (50a, 50b) is used for visual in situ microscopic observation of the sample as well as for UV illumination. The electron optical components and the sample with accelerating field followed by an einzel lens form a tetrode system. In order to keep the field strength high, the sample is separated from the first element of the einzel lens by only 1.6 mm. With a numerical aperture of 0.5 for the Schwarzschild objective the orifice in the first element of the einzel lens has to be about 3.0 mm in diameter. Considering the much smaller distance to the sample one can expect intense distortions of the accelerating field in front of the sample. Because the achievable lateral resolution depends mainly on the quality of the first imaging step, careful investigation of the aberrations caused by the emission lens system had to be done in order to avoid sacrificing high lateral resolution for larger numerical aperture.

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