scholarly journals Electron Emission From Porous Poly-Silicon Nano-Device for Flat Panel Display

2009 ◽  
Vol 499 (1) ◽  
pp. 268/[590]-275/[597]
Author(s):  
Sungwook Jung ◽  
Jaehyun Jo ◽  
Kyungsoo Jang ◽  
Hyukjoo Son ◽  
Jaehong Kim ◽  
...  

2005 ◽  
Vol 475-479 ◽  
pp. 3689-3692
Author(s):  
Hui Zhong Ma ◽  
Lan Zhang ◽  
Jun Jie Zhang ◽  
Yun Hai Du ◽  
Ning Yao ◽  
...  

A flexible carbon thin film was prepared by laser induced when phase changing of polyimide thin film. There is no substrate for this thin film. It could be curved at any angle. The electron emission properties of the prepared thin film were measured by a diode mechanism; the thin film was used as a cathode and indium-tin-oxide (ITO) glass as an anode. The turn-on field of the thin film was about 2.1 V/µm. The current density of the thin film was about 150 µA/cm2 at the electric field of 4.5 V/µm. The electron emission measurements indicate that the thin film could be a good candidate electron emission material in flat panel display or be used as other electron source. The morphology and structure of the thin film were investigated by optical microscope and Raman spectroscopy.


1997 ◽  
Vol 471 ◽  
Author(s):  
R. Pethe ◽  
C. Deshpandey ◽  
S. Dixit ◽  
E. Demaray ◽  
D. Meakin ◽  
...  

Large grain poly-Silicon (p-Si) films have been evaluated for high speed TFT for flat panel displays [1,2]. It is expected that with good quality p-Si, “System on Glass” products, in which entire electronic circuitry is incorporated directly onto glass are achievable [3]. This approach therefore has the potential to fabricate Integrated AMLCD's (IAMLCD) and bypass conventional Si wafer based products and integrate CMOS circuits with direct view TFT LCD manufacturing. To realize this potential; it is necessary to develop a production process for depositing repeatable, good quality p-Si films on to large area glass substrates.


1996 ◽  
Vol 79 (9) ◽  
pp. 7401-7403 ◽  
Author(s):  
G. Rosenman ◽  
D. Shur ◽  
A. Skliar

2000 ◽  
Vol 638 ◽  
Author(s):  
Takuya Komoda ◽  
Tsutomu Ichihara ◽  
Yoshiaki Honda ◽  
Koichi Aizawa ◽  
Nobuyoshi Koshida

AbstractIt is demonstrated that a porous polycrystalline silicon (PPS) film is useful as a ballistic electron emitter for excitation source of a flat panel display. A 1.5 µ m polysilicon layer is deposited on a silicon substrate by Low Pressure Chemical Vapour Deposition (LPCVD) technique and subsequently anodised in an ethanoic HF solution and oxidised in a Rapid Thermal Oxidation (RTO) furnace. A thin Au film is deposited onto the RTO-treated PPS layer and used as a top electrode. The electron emission current Ie and the diode current Ips are measured as a function of the bias voltage Vps. Electron emission of which onset voltage is about 8 V rapidly increases with increasing Vps. The Ie value reaches about 2 mA/cm2 for Vps= 20 V at which the emission efficiency defined as Ie/Ips is about 1 %. The emission mechanism has also been investigated in terms of the correlation between the emitted electron energy and the structure of PPS layer. The observed energy distribution curve of output electrons suggests that the PPS layer acts as a ballistic transport medium and the emission occurs based on multiple tunnelling through silicon nanocrystallites. The PPS layer is also formed on the polysilicon layer deposited on a glass substrate by Plasma Enhanced Chemical Vapour Deposition (PCVD) technique. In this case, the film is treated by an electrochemical oxidation (ECO) in an H2SO4 solution. Similar emission characteristics are observed, although the emission current is lower than that formed on silicon substrate. We also demonstrate the 2.6 inches diagonal 53×40 pixels multicolour flat panel display. We name it ballistic electron surface-emitting display device (BSD). BSD shows the possible application to the future flat panel display.


2018 ◽  
Vol 4 (11) ◽  
pp. 133
Author(s):  
HyungTae Kim ◽  
EungJoo Ha ◽  
KyungChan Jin ◽  
ByungWook Kim

A system for inspecting flat panel displays (FPDs) acquires scanning images using multiline charge-coupled device (CCD) cameras and industrial machine vision. Optical filters are currently installed in front of these inspection systems to obtain high-quality images. However, the combination of optical filters required is determined manually and by using empirical methods; this is referred to as passive color control. In this study, active color control is proposed for inspecting FPDs. This inspection scheme requires the scanning of images, which is achieved using a mixed color light source and a mixing algorithm. The light source utilizes high-power light emitting diodes (LEDs) of multiple colors and a communication port to dim their level. Mixed light illuminates an active-matrix organic light-emitting diode (AMOLED) panel after passing through a beam expander and after being shaped into a line beam. The image quality is then evaluated using the Tenenbaum gradient after intensity calibration of the scanning images. The dimming levels are determined using the simplex search method which maximizes the image quality. The color of the light was varied after every scan of an AMOLED panel, and the variation was iterated until the image quality approached a local maximization. The number of scans performed was less than 225, while the number of dimming level combinations was 20484. The proposed method can reduce manual tasks in setting-up inspection machines, and hence is useful for the inspection machines in FPD processes.


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