scholarly journals Thermal Stability and Electrical Properties of HfOxNyGate Dielectrics with TaN Gate Electrode

2003 ◽  
Vol 4 (3) ◽  
pp. 34-37
Author(s):  
Jeon-Ho Kim ◽  
Kyu-Jeong Choi ◽  
Nak-Jin Seong ◽  
Soon-Gil Yoon ◽  
Won-Jae Lee ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Electrical Properties ◽  
Gate Electrode

Formation of a Thermally Stable NiSi FUSI Gate Electrode by a Novel Integration Process

2006 ◽  
Vol 958 ◽  
Author(s):  
Shiang Yu Tan ◽  
Hsien-Chia Chiu ◽  
Chun-Yen Hu
Keyword(s):  
Thermal Stability ◽  
Electrical Properties ◽  
Process Integration ◽  
Measurement Techniques ◽  
Nickel Silicide ◽  
High Resistivity ◽  
Thermally Stable ◽  
Integration Process ◽  
Gate Electrode ◽  
Thermal Stability Of

ABSTRACTNickel silicide is promising to be the choice material as contact to the source, drain, and gate for sub-65 nm and 45 nm CMOS devices. However, the thermal stability of NiSi is worse as the high resistivity phase of NiSi2 nucleates at about 750 °C and film agglomeration occurs even at a temperature as low as 600 °C. The process integration issues and formation thermally stable NiSi are needed to be understood and addressed. In order to obtain a thermally stable Ni-FUSI gate electrode, we introduced a novel integration process by using a two-step anneal process associating with properly tuned thickness of the initial Ni film and implant BF2 atoms during the poly-gate formation. As results, push the transformation of NiSi2 to a higher temperatures at about 900 °C. Several measurement techniques such as XRD, TEM, SEM and Resistivity are carried out to demonstrate its physical and electrical properties.

Effect of Size Fractionation on Purity, Thermal Stability and Electrical Properties of Natural Hematite

2021 ◽  
Author(s):  
Saheli Ghosh ◽  
Shubham Roy ◽  
Souravi Bardhan ◽  
Nibedita Khatua ◽  
Barsha Bhowal ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Electrical Properties ◽  
Size Fractionation

scholarly journals Electrical properties and thermal stability in stack structure of HfO2/Al2O3/InSb by atomic layer deposition

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Min Baik ◽  
Hang-Kyu Kang ◽  
Yu-Seon Kang ◽  
Kwang-Sik Jeong ◽  
Youngseo An ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

The effect of blocking layer of Al2O3 on thermal stability and electrical properties of HfO2 dielectric films deposited on SiGe layer

2008 ◽  
Vol 85 (9) ◽  
pp. 1888-1891 ◽  
Author(s):  
Xinhong Cheng ◽  
Dawei He ◽  
Zhaorui Song ◽  
Yuehui Yu ◽  
DaShen Shen
Keyword(s):  
Thermal Stability ◽  
Electrical Properties ◽  
Sige Layer ◽  
Dielectric Films ◽  
Blocking Layer

ChemInform Abstract: Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO4Precursor.

ChemInform ◽  
2009 ◽  
Vol 40 (17) ◽  
Author(s):  
Jeong Hwan Han ◽  
Sang Woon Lee ◽  
Gyu-Jin Choi ◽  
Sang Young Lee ◽  
Cheol Seong Hwang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Chemical Vapor

High Mobility IGZO/ITO Double-layered Transparent Composite Electrode: A Thermal Stability Study

2013 ◽  
Vol 1577 ◽  
Author(s):  
Aritra Dhar ◽  
T. L. Alford
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Electrical Properties ◽  
Indium Tin Oxide ◽  
High Mobility ◽  
Bottom Layer ◽  
Optoelectronic Device ◽  
Stability Study ◽  
Visible Range ◽  
Vis Spectroscopy

ABSTRACTThe fabrication of a thin film optoelectronic device involves the exposure of the transparent conductive oxide (TCO) to a high process temperature. Indium gallium zinc oxide (InGaZnO4 or IGZO) is a well known TCO with high optical transparency, moderate conductivity and high mobility. However, its electrical properties deteriorate after subsequent high temperature processes in air atmosphere. On the other hand indium tin oxide (ITO) has higher conductivity than IGZO and better thermal stability. Therefore, IGZO/ITO bilayers have been deposited on glass by radio frequency magnetron sputtering at room temperature and subsequently annealed at high temperatures in order to study their thermal stability. In the present work, a-IGZO layers with a thickness ranging from 10 nm to 100 nm were deposited over a 50 nm thick ITO layer. Results are compared with those from a single IGZO layered thin film without the ITO bottom layer. The structural, optical and electrical properties of the multilayers are studied with the use of scanning electron microscopy, UV–Vis spectroscopy and Hall measurement. An IGZO optimal thickness of 50 nm is found to improve the bilayer thermal stability at temperatures upto 400 °C keeping good opto-electrical properties. The sheet resistance for the optimized IGZO/ITO composite films is about 22 Ohm/sq, and the transmittance in the visible range is about 90%. The composite shows an excellent mobility above 40 cm2 /V-s and thus can be potentially applied as channel layer in thin film transistors (TFTs)

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