Structural and Surface Characteristics of CuO and Pt/CuO Nanostructured Thin Films

2021 ◽  
Vol 14 (5) ◽  
pp. 419-424
Keyword(s):  
Thin Films ◽  
Optical Fibers ◽  
Structural Information ◽  
Surface Characteristics ◽  
X Ray Diffraction ◽  
Phonon Modes ◽  
Silar Method ◽  
Nanostructured Thin Films ◽  
Average Grain Size ◽  
Sem Micrograph

Abstract: The most prominent and utilizable platinum-coated copper Oxide nanostructured thin films are prepared using the SILAR method. Their structural properties have been studied using X-ray diffraction (XRD) and Raman spectroscopy. XRD pattern reveals the phase purity and crystallinity of CuO nanostructures. The average grain size estimated from XRD gives diameters in the range of 14 - 27 nm. Raman spectra explain the structural information of CuO and Pt/CuO nanostructured thin films, in which the peaks observed at 328 cm-1, 609.32 cm-1 and 1141.77 cm-1 are the different phonon modes of CuO. The peak at 2136 cm-1 provides strong evidence for the formation of platinum on CuO nanostructures. The SEM micrograph confirms the floral morphology, which is composed of nano petals. From the observed morphology, it is observed that the deposited thin films such as CuO and Pt/CuO will give interesting applications to our society by being self-cleaning agents, photocatalysts, semiconductor devices, optical fibers, … etc. Keywords: CuO, Pt/CuO, Structural analysis, SILAR, Crystallinity.

scholarly journals The Influence of Bath Temperature on the Properties of SILAR Deposited Cobalt Selenide Thin Films

2021 ◽  
Vol 11 (4) ◽  
pp. 7393-7398
Author(s):  
S. M. Ho ◽  
T. J. S. Anand
Keyword(s):  
Thin Films ◽  
Bath Temperature ◽  
X Ray Diffraction ◽  
Silar Method ◽  
X Ray ◽  
Glass Slides ◽  
Average Grain Size ◽  
Diffraction Patterns ◽  
C 50 ◽  
Cobalt Selenide

In this paper, cobalt selenide thin films have been deposited onto glass slides with the SILAR method under various bath temperatures. The structure, optical properties, and morphology of thin films were investigated. The X-ray diffraction patterns confirmed that the number of peak intensities increased with increasing bath temperature. From the AFM images, bigger sizes and thicker films were observed for the films prepared at 80°C. The average grain size was estimated to be 0.2µm, 0.15µm, and 0.25µm when the bath temperature was 40°C, 50°C, and 80°C respectively. The highest absorbance value was observed for films prepared at 80°C. The band gap values range from 2eV to 2.4eV.

Chemical synthesis and study of structural and optoelectronic properties of CdS thin films: Effect of SILAR growth cycles

2015 ◽  
Vol 9 (3) ◽  
pp. 2461-2469
Author(s):  
S. R. Gosavi ◽  
K. B. Chaudhari
Keyword(s):  
Thin Films ◽  
Average Crystallite Size ◽  
X Ray Diffraction ◽  
Silar Method ◽  
Growth Cycles ◽  
Glass Substrates ◽  
Layer Adsorption ◽  
Cds Thin Films ◽  
Structural And Optoelectronic Properties ◽  
Deposited Film

CdS thin films were deposited on glass substrates by using successive ionic layer adsorption and reaction (SILAR) method at room temperature. The effect of SILAR growth cycles on structural, morphological, optical and electrical properties of the films has been studied.  The thickness of the deposited film is measured by employing weight difference method. The X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) studies showed that all the films exhibit polycrystalline nature and are covered well with glass substrates. The values of average crystallite size were found to be 53 nm, 58 nm, 63 nm and 71 nm corresponding to the thin films deposited with 30, 40, 50 and 60 SILAR growth cycles respectively. From the UV–VIS spectra of the deposited thin films, it was seen that both the absorption properties and energy bandgap of the films changes with increasing number of SILAR growth cycles. A decrease of electrical resistivity has been observed with increasing SILAR growth cycle. 

Determining the C60 molecular arrangement in thin films by means of X-ray diffraction

2011 ◽  
Vol 44 (5) ◽  
pp. 983-990 ◽  
Author(s):  
Chris Elschner ◽  
Alexandr A. Levin ◽  
Lutz Wilde ◽  
Jörg Grenzer ◽  
Christian Schroer ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Information ◽  
Grazing Incidence ◽  
Test Material ◽  
C60 Fullerene ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molecular Arrangement ◽  
Diffraction Patterns

The electrical and optical properties of molecular thin films are widely used, for instance in organic electronics, and depend strongly on the molecular arrangement of the organic layers. It is shown here how atomic structural information can be obtained from molecular films without further knowledge of the single-crystal structure. C60 fullerene was chosen as a representative test material. A 250 nm C60 film was investigated by grazing-incidence X-ray diffraction and the data compared with a Bragg–Brentano X-ray diffraction measurement of the corresponding C60 powder. The diffraction patterns of both powder and film were used to calculate the pair distribution function (PDF), which allowed an investigation of the short-range order of the structures. With the help of the PDF, a structure model for the C60 molecular arrangement was determined for both C60 powder and thin film. The results agree very well with a classical whole-pattern fitting approach for the C60 diffraction patterns.

scholarly journals Chemically synthesized PbS Nano particulate thin films for a rapid NO2 gas sensor

2016 ◽  
Vol 34 (1) ◽  
pp. 204-211 ◽  
Author(s):  
Vishal V. Burungale ◽  
Rupesh S. Devan ◽  
Sachin A. Pawar ◽  
Namdev S. Harale ◽  
Vithoba L. Patil ◽  
...  
Keyword(s):  
Thin Films ◽  
Gas Sensor ◽  
Gas Sensing ◽  
Operating Temperature ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
Gas Sensitivity ◽  
Silar Method ◽  
Layer Adsorption ◽  
Gas Sensing Properties

AbstractRapid NO2 gas sensor has been developed based on PbS nanoparticulate thin films synthesized by Successive Ionic Layer Adsorption and Reaction (SILAR) method at different precursor concentrations. The structural and morphological properties were investigated by means of X-ray diffraction and field emission scanning electron microscope. NO2 gas sensing properties of PbS thin films deposited at different concentrations were tested. PbS film with 0.25 M precursor concentration showed the highest sensitivity. In order to optimize the operating temperature, the sensitivity of the sensor to 50 ppm NO2 gas was measured at different operating temperatures, from 50 to 200 °C. The gas sensitivity increased with an increase in operating temperature and achieved the maximum value at 150 °C, followed by a decrease in sensitivity with further increase of the operating temperature. The sensitivity was about 35 % for 50 ppm NO2 at 150 °C with rapid response time of 6 s. T90 and T10 recovery time was 97 s at this gas concentration.

Preparation of Cu2ZnSnS4 Thin Films by Successive Ionic Layer Adsorption and Reaction (SILAR) Method for Supercapacitor Applications

2020 ◽  
Vol 20 (10) ◽  
pp. 6235-6244 ◽  
Author(s):  
A. Murugan ◽  
V. Siva ◽  
A. Shameem ◽  
S. Asath Bahadur
Keyword(s):  
Thin Films ◽  
Electrochemical Behavior ◽  
Electrochemical Impedance ◽  
X Ray Diffraction ◽  
Silar Method ◽  
Layer Adsorption ◽  
Diffraction Patterns ◽  
Czts Thin Films ◽  
Supercapacitor Applications ◽  
Ionic Layer

The Cu2ZnSnS4 (CZTS) thin films have been prepared at different deposition cycles, deposited on a glass substrate by successive ionic layer adsorption and reaction (SILAR) method followed by the annealing process at elevated temperature. The investigations on the films have been carried out to understand and confirm its structure, functional group present, crystalline morphology, optical and electrochemical behavior. The powder X-ray diffraction patterns recorded indicate that the deposited films are formed in the tetragonal structure. Other parameters like grain size, dislocation density, and microstrain are also calculated. The uniform surface of the films with spherical shaped morphology has been observed by Scanning Electron Microscopy, and the elemental compositions have been confirmed by EDAX. Electrochemical behavior such as cyclic voltammetry, electrochemical impedance spectroscopy and galvanostatic charge–discharge analysis have been carried out by electrochemical workstation. The modified electrode exhibits maximum specific capacitance value as 416 F/g for a pure sample. Optical studies have shown that the band gaps are estimated between 1.40 eV and 1.57 eV.

Deposition of TiO2 Thin Films Using Magnetron Sputtering

2011 ◽  
Vol 217-218 ◽  
pp. 1743-1746
Author(s):  
Xing Long Guo
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Profile Analysis ◽  
Line Profile Analysis ◽  
Analysis Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Average Grain Size ◽  
Diffraction Patterns

TiO2 with 20nm in diameter have been prepared by using magnetron sputtering technique. The structure of these powers was determined by X-ray diffraction experiments. The average grain size and particle size in these powers were measured by the line profile analysis method of X-ray diffraction patterns and by scan electron microscopy, respectively. The thin films were investigated by using XRD, SEM measurements.

scholarly journals Scanning X-Ray Diffraction: A Technique With High Compositional Resolution for Studying Phase Formation in Co-Deposited Thin Films

1994 ◽  
Vol 343 ◽  
Author(s):  
T.I. Selinder ◽  
D.J. Miller ◽  
K.E. Gray ◽  
M.A. Beno ◽  
G.S. Knapp
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Structural Information ◽  
Metastable Phase ◽  
Ternary Systems ◽  
Composition Gradient ◽  
X Ray Diffraction ◽  
X Ray ◽  
Analysis Technique ◽  
Position Sensitive

ABSTRACTInvestigation of the formation of new metastable phases in alloy thin films requires ways of quickly determining the crystalline structure of samples with different compositions. We report a novel technique for acquiring structural information from films intentionally grown with a composition gradient. For example, binary metal alloy films were deposited using a phase-spread sputtering method. In this way essentially the entire composition range could be grown in a single deposition. By using a narrow incident x-ray beam and a translating sample stage combined with a position sensitive x-ray detector technique, detailed information of the metastable phase diagram can be obtained rapidly. Compositional resolution of the order of ±0.2% can be achieved, and is limited by the brightness of the x-ray source. Initial results from studies of phase formation in Zr-Ta alloys will be presented. Extensions of the analysis technique to ternary systems will be discussed.

SURFACE MORPHOLOGY OF SUBMICRON CRYSTALS IN ALUMINUM NITRIDE FILMS GROWN BY DC MAGNETRON SPUTTERING

2005 ◽  
Vol 19 (12) ◽  
pp. 2073-2083 ◽  
Author(s):  
P. LIMSUWAN ◽  
N. UDOMKAN ◽  
S. MEEJOO ◽  
P. WINOTAI
Keyword(s):  
Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Phonon Modes ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters ◽  
X Band ◽  
Aln Film ◽  
Average Grain Size ◽  
Optimal Average

Aluminium nitride (AlN) thin films were fabricated on a glass substrate by reactive magnetron sputtering. Raman microscopy was then employed to follow the characteristics of their optical and acoustic phonon modes. At the optimal sputtering time of 30 minutes, the defect-induced first and second order Raman spectra were observed in 400–800 cm-1 band which were mostly related to the coating compositions. However, at the 30-, 60- and 90-minute sputtering, crystals of submicron size order of AlN were achieved. This could be clearly identified by the presence of Raman peak at 658–662 cm-1. Powder X-ray diffraction (PXRD) patterns revealed the development of (002) and (101) planes of hexagonal wurtzite AlN phase. The optimal average grain size measured by atomic force microscopy (AFM) is at 330 nm. It was found that the hardness was strongly dependent on roughness of the film, the maximum of which was achieved at 20.00 GPa. The presence of F-type defects in AlN films was investigated by X-band (~9.44 GHz) ESR spectrometer at 295 K. The ESR experiments were carried out by applying magnetic field perpendicular to AlN film, which showed the ESR six-peak multiplet signal at ~290 mT arising from superhyperfine interactions between nuclear spin I = 5/2 of 27 Al and electron spins trapped in nitrogen vacancies. The ESR signals are simulated and the ESR parameters are calculated. The vacancies are clearly randomly distributed as the ESR signals are independent of rotation angle (φ) about the normal of the film. All these results were analyzed and presented as a function of the deposition parameters and composition, and crystalline phases existed in the films.

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