Deposition of TiO2 Thin Films Using Magnetron Sputtering

2011 ◽  
Vol 217-218 ◽  
pp. 1743-1746
Author(s):  
Xing Long Guo
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Profile Analysis ◽  
Line Profile Analysis ◽  
Analysis Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Average Grain Size ◽  
Diffraction Patterns

TiO2 with 20nm in diameter have been prepared by using magnetron sputtering technique. The structure of these powers was determined by X-ray diffraction experiments. The average grain size and particle size in these powers were measured by the line profile analysis method of X-ray diffraction patterns and by scan electron microscopy, respectively. The thin films were investigated by using XRD, SEM measurements.

Structural studies on Tl–Ca–Ba–Cu−0 superconducting thin films

1993 ◽  
Vol 8 (4) ◽  
pp. 720-726 ◽  
Author(s):  
Bruno Morosin ◽  
Grant M. Norton ◽  
Barry C. Carter ◽  
E.L. Venturini ◽  
D.S. Ginley
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Profile Analysis ◽  
Defect Layer ◽  
Line Profile Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Fringe ◽  
Transmission Electron ◽  
Good Agreement

The microstructure of mixed phase, c-axis oriented Tl–Ca–Ba–Cu–O thin films, exhibiting excellent superconducting properties, has been examined by transmission electron microscopy and x-ray diffraction. Although the stoichiometry of the as-deposited films corresponds to the Tl2Ca2Ba2Cu3O10 phase (Tl-2223, c = 3.6 nm), x-ray diffraction showed these films contain up to 50% of the Tl2CaBa2Cu2O8 phase (Tl-2122, c ≍ 2.9 nm). The x-ray diffraction peaks of the 3.6 nm phase are noticeably broader than those of the 2.9 nm phase, suggesting a smaller coherent size along the c-axis for the 3.6 nm phase Lattice-fringe images of the 2.9 nm phase typically show only an occasional or no defect layer; however, such layer defects are more abundant in the 3.6 nm phase and, though random, occur with sufficiently wide separation and regularity to be consistent with an average coherency of ∼40 nm. The coherent sizes along the c-axis, as determined by x-ray line profile analysis, were 140 nm and 40 nm, respectively, for the 2.9 nm and 3.6 nm phases, in good agreement with those determined by electron microscopy. The estimated width of the layer defects observed in the lattice-fringe images is suggestive, for the most part, of the four Cu-layered phases (Tl-1324 or Tl-2324) and to a lesser degree the two Cu-layered phases (Tl-1122 or Tl-2122).

scholarly journals Microstructure, Stress and Texture in Sputter Deposited TiN Thin Films: Effect of Substrate Bias

2014 ◽  
Vol 996 ◽  
pp. 855-859 ◽  
Author(s):  
Jay Chakraborty ◽  
Tias Maity ◽  
Kishor Kumar ◽  
S. Mukherjee
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Profile Analysis ◽  
Lattice Parameter ◽  
Line Profile Analysis ◽  
Substrate Bias ◽  
X Ray Diffraction ◽  
Strain Anisotropy ◽  
X Ray ◽  
Tin Thin Films

Titanium nitride thin films deposited by reactive dc magnetron sputtering under various substrate bias voltages have been investigated by X-ray diffraction. TiN thin films exhibits lattice parameter anisotropy for all bias voltages. Preferential entrapment of argon atoms in TiN lattice has been identified as the major cause of lattice parameter anisotropy. Bombardment of argon ions during film growth has produced stacking faults on {111} planes of TiN crystal. Stacking fault probability increases with increasing substrate bias voltages. X-ray diffraction line profile analysis indicates strain anisotropy in TiN thin films. Diffraction stress analysis by d-sin2ψ method reveals pronounced curvature in the plot of inter-planar spacing (d) (or corresponding lattice parameter (a)) versus sin2ψ. Direction dependent elastic grain interaction has been considered as possible source of the observed anisotropic line broadening.

Microstructural Characterization of Electro-Deposited CdSe Thin Films

2009 ◽  
Vol 68 ◽  
pp. 44-51 ◽  
Author(s):  
S. Thanikaikarasan ◽  
T. Mahalingam ◽  
S.R. Srikumar ◽  
Tae Kyu Kim ◽  
Yong Deak Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Profile Analysis ◽  
Microstructural Characterization ◽  
Bath Temperature ◽  
Hexagonal Structure ◽  
Line Profile Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Microstructural Parameters ◽  
Deposited Films

Thin films of CdSe were electrodeposited on tin oxide coated conducting glass substrates at various bath temperatures. The deposited films were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM). X-ray diffraction studies revealed that the deposited films are found to be hexagonal structure with preferential orientation along (002) plane. The microstructural parameters such as crystallite size, R.M.S strain, dislocation density, stacking fault probability were calculated using x-ray line profile analysis technique. The variation of microstructural parameters with bath temperature and film thickness were studied and discussed.

Recrystallization of Cu–In–S thin films studiedin situby energy-dispersive X-ray diffraction

2010 ◽  
Vol 43 (5) ◽  
pp. 1053-1061 ◽  
Author(s):  
Humberto Rodriguez-Alvarez ◽  
Roland Mainz ◽  
Björn Marsen ◽  
Daniel Abou-Ras ◽  
Hans Werner Schock
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Profile Analysis ◽  
Energy Dispersive ◽  
Line Profile Analysis ◽  
Material System ◽  
X Ray Diffraction ◽  
Sulfur Pressure ◽  
X Ray ◽  
Pure Cu

The recrystallization of Cu–In–S thin films has been monitored in real time by means of synchrotron-based energy-dispersive X-ray diffraction. To trigger recrystallization, nanocrystalline Cu–In–S layers with [Cu]/[In] < 1 were covered with layers of CuS or pure Cu, so that the overall ratio [Cu]/[In] > 1. The bilayer films were heated to 773 K and the evolution of the microstructure was monitoredin situ viadiffraction spectra. In the first step of the analysis, the diffraction data were used to identify solid-state phase transitions as a function of temperature. In a further step, single-line profile analysis of the 112 CuInS2reflection was used to study grain growth in this material system. The recrystallization was investigated under two sulfur pressure conditions and for different [Cu]/[In] ratios. The recrystallization is composed of three steps: consumption of the CuIn5S8phase, grain growth, and a transition from the Cu–Au-type to the chalcopyrite-type structure of CuInS2. Increasing the sulfur pressure during heating systematically reduces the temperature at which grain growth sets in. Various paths to control the recrystallization of Cu–In–S thin films are proposed.

Dislocation densities and prevailing slip-system types determined by X-ray line profile analysis in a textured AZ31 magnesium alloy deformed at different temperatures

2013 ◽  
Vol 46 (1) ◽  
pp. 55-62 ◽  
Author(s):  
Bertalan Jóni ◽  
Talal Al-Samman ◽  
Sandip Ghosh Chowdhury ◽  
Gábor Csiszár ◽  
Tamás Ungár
Keyword(s):  
Magnesium Alloy ◽  
Tensile Deformation ◽  
Profile Analysis ◽  
High Angular Resolution ◽  
Line Profile Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dislocation Densities ◽  
Different Temperatures ◽  
Diffraction Patterns

Tension experiments were carried out at room temperature, 473 K and 673 K on AZ31-type extruded magnesium alloy samples. The tensile deformation has almost no effect on the typical extrusion texture at any of the investigated temperatures. X-ray diffraction patterns provided by a high-angular-resolution diffractometer were analyzed for the dislocation density and slip activity after deformation to fracture. The diffraction peaks were sorted into two groups corresponding either to the major or to the random texture components in the specimen. The two groups of reflections were evaluated simultaneously as if the two texture components were two different phases. The dislocation densities in the major texture components are found to be always larger than those in the randomly oriented grain populations. The overwhelming fraction of dislocations prevailing in the samples is found to be of 〈a〉 type, with a smaller fraction of 〈c + a〉-type dislocations. The fraction of 〈c〉-type dislocations is always obtained to be zero within experimental error.

The Fabrication of Fe-Doped TiCoSb Thin Films by Magnetron Sputtering and Rapid Thermal Annealing

2013 ◽  
Vol 341-342 ◽  
pp. 129-133
Author(s):  
Juan Qin ◽  
Niu Yi Sun ◽  
Guo Hua Wang ◽  
Min Zhang ◽  
Wei Min Shi ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Seebeck Coefficient ◽  
Diffraction Patterns ◽  
P Type ◽  
Narrow Band Gap Semiconductors

TiCoSb-based half-Heusler compounds, which are narrow band gap semiconductors with a high Seebeck coefficient, have been intensively studied in bulk form but rarely in thin films. In this article TiFexCo1-xSb (x=0, 0.17) thin films were synthesized on n-type single crystal Si (100) and MgO (100) substrates by DC magnetron sputtering followed by rapid thermal annealing. The X-ray diffraction patterns show that Fe doping does not affect the crystallization temperature of TiCoSb phase, but seem to induce the formation of binary phases like TiSb. Hall measurements reveal that the undoped TiCoSb thin films are n-type semiconducting, while TiFe0.2Co0.8Sb turns to p-type with half-order higher carrier concentration of 1.5×1021cm-3. The vibrating sample magnetometer spectrum indicate that the TiCoSb thin film is non-magnetic and TiFexCo1-xSb (x=0.17) is weak magnetic.

Preparation and Microstructural Studies of Electrodeposited FeSe Thin Films

2009 ◽  
Vol 68 ◽  
pp. 60-68
Author(s):  
Kyung Sik Kim ◽  
S. Thanikaikarasan ◽  
T. Mahalingam ◽  
Subramaniam Velumani ◽  
Tae Kyu Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Profile Analysis ◽  
Bath Temperature ◽  
Deposition Potential ◽  
Line Profile Analysis ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Microstructural Parameters ◽  
Deposited Films

Iron selenide (FeSe) thin films were electrodeposited onto tin oxide coated conducting glass substrates using aqueous solution mixture containing FeSO4 and SeO2 at various bath temperatures and deposition potentials. The deposited films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive analysis by x-rays (EDX) for their structural, morphological and compositional properties. X-ray diffraction patterns revealed that the deposited films are found to be tetragonal structure with preferential orientation along (100) plane. The x-ray line profile analysis technique by the method of variance has been used to evaluate the microstructural parameters such as, crystallite size, R.M.S strain, dislocation density and stacking fault probability. The influence of bath temperature and deposition potential on the microstructual parameters was investigated. The SEM observation reveals uniform surface morphology for films deposited at higher bath temperatures. The experimental observations are discussed in detail.

scholarly journals The Influence of Bath Temperature on the Properties of SILAR Deposited Cobalt Selenide Thin Films

2021 ◽  
Vol 11 (4) ◽  
pp. 7393-7398
Author(s):  
S. M. Ho ◽  
T. J. S. Anand
Keyword(s):  
Thin Films ◽  
Bath Temperature ◽  
X Ray Diffraction ◽  
Silar Method ◽  
X Ray ◽  
Glass Slides ◽  
Average Grain Size ◽  
Diffraction Patterns ◽  
C 50 ◽  
Cobalt Selenide

In this paper, cobalt selenide thin films have been deposited onto glass slides with the SILAR method under various bath temperatures. The structure, optical properties, and morphology of thin films were investigated. The X-ray diffraction patterns confirmed that the number of peak intensities increased with increasing bath temperature. From the AFM images, bigger sizes and thicker films were observed for the films prepared at 80°C. The average grain size was estimated to be 0.2µm, 0.15µm, and 0.25µm when the bath temperature was 40°C, 50°C, and 80°C respectively. The highest absorbance value was observed for films prepared at 80°C. The band gap values range from 2eV to 2.4eV.

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