scholarly journals ENHANCEMENT IN2S3NANOSTRUCTURES OPTICAL AND ELECTRICAL CHARACTERISTICS USING SPRAY PYROLYSIS GROWTH AS PROMISING MATERIAL FOR OPTOELECTRONIC APPLICATIONS

2021 ◽  
Vol 03 (02) ◽  
pp. 10-17
Author(s):  
Neran F. Abd JABBAR ◽  
N.K. HASSAN ◽  
Raid A ISMAIL
Keyword(s):  
Spray Pyrolysis ◽  
Glass Substrate ◽  
Spray Pyrolysis Technique ◽  
Hall Effect Measurement ◽  
Sem Analysis ◽  
Molar Ratio ◽  
Chemical Spray Pyrolysis ◽  
Indium Sulfide ◽  
Amorphous Glass ◽  
Direct Band

In the present work, indium sulfide In2S3 thin films were grown on amorphous glass substrate by the chemical spray pyrolysis technique .The different molar ratio of In2S3 powder and thiocyanate ( 0.05,0.1,0.15) M used to grow In2S3 nanostructure with160nm thickness on the glass substrate under 310 Co temperature. Thickness of the films were measured by optical interferometer method. Structural properties were examined using X-Ra diffraction analysis is revealed that all the films were polycrystalline in nature with a dominant 0021peak which indicates that the In2S3 nanostructures are cubic phases. The evaluated crystallite size varied in the range 67.64-81.82nm with the increase of molarity. SEM analysis revealed that all The films have no voids and cracks. Optical properties of the grown films showed that the direct band gap values were found to decrease in the range 3.1-2.75eV which are means that it has the possibility of using indium sulfide in the manufacture of optoelectronic devices. Electrical properties using Hall effect measurement showed that all films N_type semiconductor. the conductivity for all films decreases with increasing of molarity. Results indicates the possibility of using indium sulfide in the manufacturing of detector or a gas sensor.

scholarly journals Spray Pyrolysis Deposition of Nanostructured Tin Oxide Thin Films

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
G. E. Patil ◽  
D. D. Kajale ◽  
V. B. Gaikwad ◽  
G. H. Jain
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Spray Pyrolysis ◽  
Glass Substrate ◽  
Spray Pyrolysis Technique ◽  
Compositional Analysis ◽  
Xrd Analysis ◽  
Chemical Spray Pyrolysis ◽  
Visible Absorption ◽  
Spray Pyrolysis Deposition

Nanostructured SnO2 thin films were grown by the chemical spray pyrolysis (CSP) method. Homemade spray pyrolysis technique is employed to prepare thin films. SnO2 is wide bandgap semiconductor material whose film is deposited on glass substrate using aqueous solution of SnCl4·5H2O as a precursor. XRD (X-ray diffraction), UV (ultraviolet visible spectroscopy), FESEM (field emission scanning electron microscopy), and EDS (energy dispersive spectroscopy) analysis are done for structural, optical, surface morphological, and compositional analysis. XRD analysis shows polycrystalline nature of samples with pure phase formation. Crystallite size calculated from diffraction peaks is 29.92 nm showing nanostructured thin films. FESEM analysis shows that SnO2 thin film contains voids with nanoparticles. EDS analysis confirms the composition of deposited thin film on glass substrate. UV-visible absorption spectra show that the bandgap of SnO2 thin film is 3.54 eV. Bandgap of SnO2 thin film can be tuned that it can be used in optical devices.

scholarly journals The Effect of Molarity on some Physical Properties of In2S3 Thin Films Deposited by Chemical Spray Pyrolysis Technique

2016 ◽  
Vol 63 ◽  
pp. 134-140
Author(s):  
Nadir Fadhil Habubi ◽  
Raid A. Ismail ◽  
Mahmood M. Abbod
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Visible Region ◽  
Optical Transmittance ◽  
Molar Ratio ◽  
Chemical Spray Pyrolysis ◽  
Indium Chloride ◽  
Chemical Spray ◽  
High Degree

In2S3thin films were grown by the chemical spray pyrolysis (CSP) method using indium chloride and thiourea as precursors at a different molar ratio (0.05, 0.1, 0.15 and 0.2)M. The deposition was carried out at 400 °C on glass substrates. The film thickness is about 0.4 μm. The X-ray diffraction analysis revealed that all the films were polycrystalline in nature with a strong (311) plane as the preferred orientation and consisted of cubic phases. The evaluated crystallite size varied in the range of (7.32–8.32) nm with the increase of molarity concentration. Morphological analysis showed that the granular structure and the granular density decrease with the raise of molarity concentration. The optical properties of the layers were also investigated using UV-Vis. analysis, which indicated that all the In2S3films had the optical transmittance (60-85)% with increasing in molarity in the visible region, and the evaluated energy band varied in the range of (3.5–3.3) eV with the raise of molarity. The purpose of the preparation of a thin film of indium sulfide at several rates is to get thin films with a high degree of chemical balance (Stoichometery) and a high degree of crystallization.

scholarly journals A Study of the Structural and Optical Properties of SnS:F prepared by chemical spray pyrolysis technique

2014 ◽  
Vol 11 (2) ◽  
pp. 518-526
Author(s):  
Baghdad Science Journal
Keyword(s):  
Optical Properties ◽  
Spray Pyrolysis ◽  
Energy Gap ◽  
Spray Pyrolysis Technique ◽  
Chemical Spray Pyrolysis ◽  
Structural And Optical Properties ◽  
Optical Energy Gap ◽  
Optical Energy ◽  
Chemical Spray Pyrolysis Technique ◽  
Chemical Spray

Thin films of pure tin mono-sulfide SnS and tin mono-sulfide for (1,2,3,4)% fluorine SnS:F with Thicknesses of (0.85 ±0.05) ?m and (0.45±0.05) ?m respectively were prepared by chemical spray pyrolysis technique. the effect of doping of F on structural and optical properties has been studied. X-Ray diffraction analysis showed that the prepared films were polycrystalline with orthorhombic structure. It was found that doping increased the intensity of diffraction peaks. Optical properties of all samples were studied by recording the absorption and transmission spectrum in range of wave lengths (300-900) nm. The optical energy gap for direct forbidden transition and indirect allowed transition were evaluated It is found that for doping less than 2% the optical energy gap increases as the percentage of doping increases in the samples while for doping more than 2% the values of the optical energy gap decreases as the percentage of doping increases.

scholarly journals Structural and Electrical Properties of Sprayed In2S3 Films on ITO/Glass Substrate

2021 ◽  
Author(s):  
J. Koaib ◽  
N. Bouguila ◽  
M. Kraini ◽  
I. Halidou ◽  
K. Khirouni ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Indium Tin Oxide ◽  
Glass Substrate ◽  
Spray Pyrolysis Technique ◽  
Electrical Conductance ◽  
Average Crystallite Size ◽  
Chemical Spray Pyrolysis ◽  
Electrical Equivalent Circuit ◽  
Ito Glass

Abstract In2S3 thin films were grown on indium tin oxide (ITO) glass substrate by chemical spray pyrolysis technique at 360°C. The structural analysis of the deposited films shows a combination of tetragonal and cubic structures. The average crystallite size is about 25 nm. The electrical properties of In2S3 thin films have been investigated in a wide frequency (40Hz-100MHz) and temperature (400 K-660 K) ranges.We find that the electrical conductance of the In2S3 thin films is frequency and temperature dependent. The dc conductance shows a semi-conductor behavior for In2S3 films over the explored range of temperature and it follows the Arrhenius law with different activation energies. The variation of ac conductance and the frequency exponent `s’ are explained by the correlated barrier hopping (CBH) model. The Nyquist plots of impedance exhibit semicircle arcs and an electrical equivalent circuit has been suggested to interpret the impedance results.

scholarly journals Structural, Morphological and Optical Characterization of SnO2:F Thin Films Prepared by Chemical Spray Pyrolysis

2013 ◽  
Vol 18 ◽  
pp. 90-102 ◽  
Author(s):  
Salam Amir Yousif ◽  
Jenan Mohamed Abass
Keyword(s):  
Spray Pyrolysis ◽  
Tin Oxide ◽  
Spray Pyrolysis Technique ◽  
Quartz Substrate ◽  
Visible Region ◽  
Ammonium Fluoride ◽  
Chemical Spray Pyrolysis ◽  
Fluorine Doping ◽  
Diffraction Patterns ◽  
D Values

Fluorine doped tin oxide (FTO) films were successfully prepared on glass and quartz substrate at a substrate temperature equal to 450 °C for different fluorine doping (0, 0.05, 0.1, 0.15) by a homemade spray pyrolysis technique. The spray solution prepared from tin tetrachloride pentahydrate (SnCl4 · 5H2O) dissolved in distilled water at (0.1 M) concentration and ammonium fluoride (NH4F) was added into the solution for fluorine doping. X-ray diffraction patterns of the spray-deposited (SnO2: F) films for different fluorine doping show that all the diffractograms contain the characteristic SnO2 orientations. The matching of the observed and standard d-values confirm that the deposited films are of tin oxide with tetragonal structure and the films are polycrystalline with (110) as a preferred growth orientation. The surface morphology of SnO2: F thin film has been examined by atomic force microscopy (AFM). The average transmittance in the visible region (at 550 nm) has been found (40%, 47%, 52%, 59%, 61%) for the fluorine doping (0, 0.05, 0.1, 0.15, 0.2) respectively.

scholarly journals Influence of Ag-Dopant on Structural Optical and Electrical Properties of Cu(1-x)AgxO Thin Films Prepared By Chemical Spray Pyrolysis Technique

2018 ◽  
Vol 4 (5) ◽  
pp. 542-545 ◽  
Author(s):  
R. Shabu ◽  
A. Moses Ezhil Raj
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
Optical Band Gap ◽  
Spray Pyrolysis Technique ◽  
Precursor Solution ◽  
Oxide Semiconductor ◽  
Chemical Spray Pyrolysis ◽  
Chemical Spray Pyrolysis Technique ◽  
Chemical Spray

As major attention has been paid to transition metal oxide semiconductor suitable for solar cell, photo detector and gas sensor, present study embark on the structural, optical and electrical characterization of Ag doped CuO thin films prepared using chemical spray pyrolysis technique at the constant substrate temperature of 350 �C. For Ag doping, various concentrations of silver acetate (0.5-3.0 wt.%) was used in the sprayed precursor solution. Confirmed monoclinic lattice shows the tenorite phase formation of CuO in the pure and Ag doped films. The optical band gap of the films was in the range of 2.4 -3.4 eV. A minimum resistivity of 0.0017x103 ohmcm was achieved in the 0.5 wt.% Ag doped film, and its optical band gap was 2.74 eV.

Investigation on V2O5 Thin Films Prepared by Spray Pyrolysis Technique

2018 ◽  
Vol 17 (03) ◽  
pp. 1760037 ◽  
Author(s):  
A. Nancy Anna Anasthasiya ◽  
K. Gowtham ◽  
R. Shruthi ◽  
R. Pandeeswari ◽  
B. G. Jeyaprakash
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Glass Substrate ◽  
Spray Pyrolysis Technique ◽  
Precursor Solution ◽  
Xrd Pattern ◽  
Good Crystallinity ◽  
Solution Volume

The spray pyrolysis technique was employed to deposit V2O5 thin films on a glass substrate. By varying the precursor solution volume from 10[Formula: see text]mL to 50[Formula: see text]mL in steps of 10[Formula: see text]mL, films of various thicknesses were prepared. Orthorhombic polycrystalline V2O5 films were inferred from the XRD pattern irrespective of precursor solution volume. The micro-Raman studies suggested that annealed V2O5 thin film has good crystallinity. The effect of precursor solution volume on morphological and optical properties were analysed and reported.

Structural and Optical Characterization of Chemically Synthesized Nanostructured Zinc Oxide Thin Film

2021 ◽  
Vol 1 (1) ◽  
Author(s):  
Akintunde Ayodeji Ajayi ◽  
Aderemi Babatunde Alabi ◽  
Olutayo Wale Abodunrin ◽  
Kazeem Adeleke Musiliyu
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Spray Pyrolysis Technique ◽  
Optical Characterization ◽  
Sem Analysis ◽  
Oxide Thin Film ◽  
Ultraviolet Region ◽  
Chemical Spray Pyrolysis ◽  
Zno Thin Film ◽  
Electron Microscopic

Zinc Oxide (ZnO) thin film has been synthesized using the chemical spray pyrolysis technique and ethylene glycol has been used as solvent during the synthesis. X-ray diffraction (XRD) results show cubic and tetragonal phases of ZnO and the grain size was calculated to be 2.57nm. Optical characterization reveals very high transmittance within the visible-ultraviolet region and a bandgap of 3.49 eV was obtained for ZnO thin film. Scanning Electron Microscopic (SEM) analysis showed a void-free non-homogenous surface.

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