Development of Thin Metal Film Corrosion Indicators

Abstract An account is given of the development of visual and electrical corrosion indicators which utilize thin metal films vacuum-deposited on non-metallic substrates. Data are presented showing the behavior of these indicators in corrosive atmospheres. Although the indicators were developed primarily to detect and mark corrosive conditions in packages and storage areas, other possible applications are described briefly. Data reported include comparative corrosion information on electrical cards and buttons in various humid atmospheres, condition of visual and resistance thin film indicators at first sign of corrosion on hardware items, and behavior of polyvinyl resistance card indicators at different sensitizations at 25 C and 60 percent relative humidity. The paper presents the progress of this development program from the feasibility studies through the final development of manufacturing protypes. 3.23

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Doppler-Shifted Cyclotron Resonance in Thin Metal Films

Canadian Journal of Physics ◽

10.1139/p72-283 ◽

1972 ◽

Vol 50 (18) ◽

pp. 2122-2137

Author(s):

R. Turner ◽

J. F. Cochran

Keyword(s):

Magnetic Field ◽

Metal Films ◽

Thin Metal Film ◽

Thin Metal ◽

Free Electrons ◽

Fermi Surfaces ◽

First Order ◽

Simple Quantum ◽

The Magnetic Field ◽

Good Agreement

According to Van Gelder the microwave absorption by a thin metal film in the presence of a static magnetic field normal to the film contains a series of peaks as the magnetic field is varied. In the present paper it is argued that these peaks correspond to Doppler-shifted cyclotron resonances of the carriers in the metal due to the quantization of electron momenta normal to the plane of the film. A simple quantum calculation is presented for the case of free electrons where the film is thin enough that to first order the microwave fields within are determined only by the boundary conditions and Maxwell's equations. The quantum expression is in good agreement with the absorption calculated using semiclassical arguments which can be readily extended to more complicated Fermi surfaces.

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Electrical conduction in ultra thin metal films II. Experimental

Proceedings of the Royal Society of London Series A - Mathematical and Physical Sciences ◽

10.1098/rspa.1969.0049 ◽

1969 ◽

Vol 309 (1498) ◽

pp. 397-417 ◽

Cited By ~ 35

Keyword(s):

Metal Films ◽

Substrate Material ◽

Thin Metal Film ◽

Thin Metal ◽

Aluminosilicate Glass ◽

Film Material ◽

Thin Metal Films ◽

Bias Effect ◽

Glass Substrates ◽

Barium Aluminosilicate

A number of thin aggregated metal films on glass substrates are analysed in terms of the model proposed earlier (Hill 1969). It is shown that the model is consistent, and that the conductivity of a thin metal film forming an island structure can be defined in terms of the island size and spacing, and of the properties of the substrate and the film material. The potential barrier heights for electron tunnelling between particles of gold, particles of platinum , and particles of silver through soda and barium aluminosilicate glass have been determined. It is shown that the bias effect in thin metal films (Hill 1964 a ) can only be observed with metals of work function close to that of the substrate material and when the substrate contains free alkali ions.

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Microscopic Aspects of Thin Metal Film Epitaxial Growth on Metallic Substrates

Berichte der Bunsengesellschaft für physikalische Chemie ◽

10.1002/bbpc.19930970348 ◽

1993 ◽

Vol 97 (3) ◽

pp. 522-537 ◽

Cited By ~ 54

Author(s):

C. Günther ◽

S. Günther ◽

E. Kopatzki ◽

R. Q. Hwang ◽

J. Schröder ◽

...

Keyword(s):

Epitaxial Growth ◽

Metal Film ◽

Thin Metal Film ◽

Thin Metal ◽

Metallic Substrates

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Effect of Crack Formation on Stretchable Silver Electrode for Dielectric Elastomer Actuators

Advances in Science and Technology ◽

10.4028/www.scientific.net/ast.79.26 ◽

2012 ◽

Vol 79 ◽

pp. 26-31

Author(s):

Sze Hsien Low ◽

Gih Keong Lau

Keyword(s):

Silver Film ◽

Crack Formation ◽

Metal Films ◽

Dielectric Elastomer ◽

Thin Metal Film ◽

Thin Metal ◽

Dielectric Elastomer Actuators ◽

Micro Cracks ◽

Silver Electrodes ◽

Improve Reliability

Thin metal films are not commonly used electrodes for dielectric elastomer actuators as it is a common presumption that they are too stiff to allow large actuated strains. However, using thin metal film electrodes can improve reliability due to their ability to self heal, as shown from their use in metalized plastic film capacitors. Typically, from literature, actuated area strains do not exceed 10% when using thin, un-patterned, metal films formed by sputtering. However, in this present work, large actuated area strains of up to 50% have been demonstrated. This was accomplished by using thin silver film electrodes formed by electroless deposition, and it has been noticed that micro-cracks were present in such electrodes. In this paper, micro-cracks in thin silver electrodes are studied and compared against sputtered silver electrodes. This includes the study of the manner in which they affect the magnitude of actuated strain and the repeatability of the actuator. It has been found that the cracks have helped to improve actuated strain, yet did not affect repeatability, as the cracks did not propagate in subsequent activations. Instead, the cracked electrodes had reached a sort of “steady-state”

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Thin Metal Films and Multi-Layers Structure as Absorbers for Infrared Detectors

Materials Science Forum ◽

10.4028/www.scientific.net/msf.663-665.352 ◽

2010 ◽

Vol 663-665 ◽

pp. 352-355

Author(s):

Huan Liu ◽

Liang Song ◽

Shun Zhou ◽

Chang Long Cai

Keyword(s):

Metal Film ◽

Metal Layer ◽

Wide Band ◽

Polyimide Film ◽

Metal Films ◽

Thin Metal Film ◽

Thin Metal ◽

Thin Metal Films ◽

Sensor Material ◽

Quarter Wave

As thin metal films are known to act as wide-band absorbers for infrared radiation, in this paper Ni metal films are prepared on the Ge surface of double-sided polishing, The results showed the absorbing properties of the metal layer are strongly influenced by the dielectric function of the sensor material. This paper also describes one multi-layers structure as absorber. The structure included a reflector layer of 100-nm-thick Ti (e-beam evaporation), 2-µm-thick polyimide(spin-coating), and 14.9-nm-thick Ni film (e-beam evaporation). These contain a half transmissive thin metal film, a total reflective thin metal film and a quarter-wave polyimide film. The results showed that, measured performance matches well with theoretical predictions.

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Metal Microstructures in Advanced CMOS Devices

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100164258 ◽

1996 ◽

Vol 54 ◽

pp. 358-359

Author(s):

L. M. Gignac ◽

K. P. Rodbell

Keyword(s):

Grain Boundaries ◽

Semiconductor Device ◽

Chemical Vapor ◽

Microstructural Characterization ◽

Metal Films ◽

Thin Metal ◽

Electrical Performance ◽

Thin Metal Films ◽

Chemical Vapor Deposited ◽

Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

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