scholarly journals P6.9 - Development of New Capacitive Strain Sensor Based on Transparent Conductive Oxides Thin Films

2011 ◽  
Author(s):  
A. Ghinea ◽  
A. Klein
2021 ◽  
pp. 2010830
Author(s):  
Funian Mo ◽  
Yan Huang ◽  
Qing Li ◽  
Zifeng Wang ◽  
Ruijuan Jiang ◽  
...  

Materials ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 1970 ◽  
Author(s):  
Donghyeon Ryu ◽  
Alfred Mongare

In this study, a flexible strain sensor is devised using corrugated bilayer thin films consisting of poly(3-hexylthiophene) (P3HT) and poly(3,4-ethylenedioxythiophene)-polystyrene(sulfonate) (PEDOT:PSS). In previous studies, the P3HT-based photoactive non-corrugated thin film was shown to generate direct current (DC) under broadband light, and the generated DC voltage varied with applied tensile strain. Yet, the mechanical resiliency and strain sensing range of the P3HT-based thin film strain sensor were limited due to brittle non-corrugated thin film constituents. To address this issue, it is aimed to design a mechanically resilient strain sensor using corrugated thin film constituents. Buckling is induced to form corrugation in the thin films by applying pre-strain to the substrate, where the thin films are deposited, and releasing the pre-strain afterwards. It is known that corrugated thin film constituents exhibit different optical and electronic properties from non-corrugated ones. Therefore, to design the flexible strain sensor, it was studied to understand how the applied pre-strain and thickness of the PEDOT:PSS conductive thin film affects the optical and electrical properties. In addition, strain effect was investigated on the optical and electrical properties of the corrugated thin film constituents. Finally, flexible strain sensors are fabricated by following the design guideline, which is suggested from the studies on the corrugated thin film constituents, and the DC voltage strain sensing capability of the flexible strain sensors was validated. As a result, the flexible strain sensor exhibited a tensile strain sensing range up to 5% at a frequency up to 15 Hz with a maximum gauge factor ~7.


2021 ◽  
Author(s):  
Cuong Do ◽  
Ashwin A. Seshia

Temperature variation is one of the most crucial factors that need to be cancelled in MEMS sensors. Many traditional methodologies require an additional circuit to compensate for temperature. This work describes a new active temperature compensation method for MEMS capacitive strain sensor without any additional circuit. The proposed method is based on a complement 2-D capacitive structure design. It consumes zero-power, which is essential toward the realization of a low-power temperature-compensated sensor in battery-powered or energy-harvesting applications<br>


2014 ◽  
Vol 40 (1) ◽  
pp. 385-391 ◽  
Author(s):  
Ha-Rim An ◽  
ChangYeoul Kim ◽  
Sung-Tag Oh ◽  
Hyo-Jin Ahn

2018 ◽  
Vol 5 (4) ◽  
pp. 715-726 ◽  
Author(s):  
Viet Huong Nguyen ◽  
Ulrich Gottlieb ◽  
Anthony Valla ◽  
Delfina Muñoz ◽  
Daniel Bellet ◽  
...  

A new model is presented to describe charge scattering at grain boundaries in degenerately doped polycrystalline semiconductors such as transparent conductive oxides.


2021 ◽  
pp. 1-1
Author(s):  
Chi Zhang ◽  
Shang-Yang Zhang ◽  
Li-Feng Wang

2020 ◽  
Vol 8 (18) ◽  
pp. 6034-6041 ◽  
Author(s):  
V. Kesava Rao ◽  
Nitzan Shauloff ◽  
XiaoMeng Sui ◽  
H. Daniel Wagner ◽  
Raz Jelinek

Highly sensitive and stretchable PDA–PAA–Cr3+ hydrogel capacitive strain sensor is fabricated and used to monitor mechanical deformation and human motion.


2020 ◽  
Vol 1570 ◽  
pp. 012033
Author(s):  
ZHONG Jun ◽  
LI Chun-na ◽  
ZHU Wen-liang ◽  
ZHOU Hong ◽  
LIU Yong-feng ◽  
...  

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