scholarly journals Corrugated Photoactive Thin Films for Flexible Strain Sensor

Materials ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 1970 ◽  
Author(s):  
Donghyeon Ryu ◽  
Alfred Mongare
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Tensile Strain ◽  
Strain Sensor ◽  
Strain Sensors ◽  
Optical And Electrical Properties ◽  
Strain Sensing ◽  
Dc Voltage ◽  
Flexible Strain Sensor

In this study, a flexible strain sensor is devised using corrugated bilayer thin films consisting of poly(3-hexylthiophene) (P3HT) and poly(3,4-ethylenedioxythiophene)-polystyrene(sulfonate) (PEDOT:PSS). In previous studies, the P3HT-based photoactive non-corrugated thin film was shown to generate direct current (DC) under broadband light, and the generated DC voltage varied with applied tensile strain. Yet, the mechanical resiliency and strain sensing range of the P3HT-based thin film strain sensor were limited due to brittle non-corrugated thin film constituents. To address this issue, it is aimed to design a mechanically resilient strain sensor using corrugated thin film constituents. Buckling is induced to form corrugation in the thin films by applying pre-strain to the substrate, where the thin films are deposited, and releasing the pre-strain afterwards. It is known that corrugated thin film constituents exhibit different optical and electronic properties from non-corrugated ones. Therefore, to design the flexible strain sensor, it was studied to understand how the applied pre-strain and thickness of the PEDOT:PSS conductive thin film affects the optical and electrical properties. In addition, strain effect was investigated on the optical and electrical properties of the corrugated thin film constituents. Finally, flexible strain sensors are fabricated by following the design guideline, which is suggested from the studies on the corrugated thin film constituents, and the DC voltage strain sensing capability of the flexible strain sensors was validated. As a result, the flexible strain sensor exhibited a tensile strain sensing range up to 5% at a frequency up to 15 Hz with a maximum gauge factor ~7.

scholarly journals Corrugated Photoactive Thin Films for Flexible Strain Sensor

2018 ◽  
Author(s):  
Donghyeon Ryu ◽  
Alfred Mongare
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Tensile Strain ◽  
Strain Sensor ◽  
Strain Effect ◽  
Optical And Electrical Properties ◽  
Strain Sensing ◽  
Dc Voltage ◽  
Flexible Strain Sensor

In this study, a flexible strain sensor is devised using corrugated poly(3-hexylthiophene) (P3HT) thin film. In the previous studies, the P3HT-based photoactive thin film was shown to generate direct current (DC) under broadband light, and the generated DC voltage varied with applied tensile strain. Yet, the mechanical resiliency and strain sensing range of the P3HT-based thin film strain sensor were limited due to relatively more brittle thin film constituent—poly(3,4-ethylenedioxythiophene)-polystyrene(sulfonate) (PEDOT:PSS) conductive thin film as a bottom electrode. To address this issue, it is aimed to design mechanically resilient strain sensor using corrugated thin film constituents. Buckling is induced to form corrugation in the thin films by applying pre-strain to the substrate, where the thin films are deposited, and releasing the pre-strain afterwards. It is known that corrugated thin film constituents exhibit different optical and electronic properties from non-corrugated ones. Therefore, to optimize design of the flexible strain sensor, it was studied to understand how the applied pre-strain and thickness of the PEDOT:PSS thin film affect the optical and electrical properties. Also, pre-strain effect on light absorptivity of the corrugated P3HT-based thin films was studied. In addition, strain effect was investigated on the optical and electrical properties of the corrugated thin film constituents. Finally, flexible strain sensors are fabricated by following the design guideline, which is suggested from the studies on the corrugated thin film constituents, and DC voltage strain sensing capability was validated. As a result, flexible strain sensor exhibited tensile strain sensing range up to 5% at frequency up to 15 Hz with maximum gage factor ~7.

Development of the Structural, Optical, and Electrical Properties of PEDOT:PSS Conducting Polymer Thin Film for Energy Applications

2021 ◽  
Vol 902 ◽  
pp. 65-70
Author(s):  
Samar Aboulhadeed ◽  
Mohsen Ghali ◽  
Mohamad M. Ayad
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Conducting Polymer ◽  
Film Surface ◽  
Volume Ratio ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Optical And Electrical Properties ◽  
Energy Applications

We report on a development of the structural, optical and electrical properties of poly (3,4-ethylenedioxythiophene)-poly (styrenesulfonate) (PEDOT:PSS) conducting polymer thin films. The PEDOT:PSS thin films were deposited by a controlled thin film applicator and their physical properties were found to be effectively modified by isopropanol. The deposited films were investigated by several techniques including XRD, UV–Vis, SPM and Hall-effect. Interestingly, by optimizing the PEDOTS:PSS/ISO volume ratio (v:v), we find that the film charge carriers type can be switched from p to n-type with a high bulk carriers concentration reaching 6×1017 cm-3. Moreover, the film surface roughness becomes smoother and reaching a small value of only 1.9 nm. Such development of the PEDOT:PSS film properties makes it very promising to act as an electron transport layer for different energy applications.

scholarly journals Preparation of polymer thin film using as NH3 gas Sensor

2014 ◽  
Vol 11 (2) ◽  
pp. 598-604
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Gas Sensor ◽  
Organic Semiconductor ◽  
Glass Substrate ◽  
Room Temperature ◽  
Oxidative Polymerization ◽  
Optical And Electrical Properties ◽  
Polymer Thin Film

Polyaniline organic Semiconductor polymer thin films have been prepared by oxidative polymerization at room temperature, this polymer was deposited on glass substrate with thickness 900nm, FTIR spectra was tested , the structural,optical and electrical properties were studied through XRD ,UV-Vis ,IR measurements ,the results was appeared that polymer thin film sensing to NH3 gas.

Optical and electrical properties of nano-crystalline GaN thin films and their application for thin-film transistor

1998 ◽  
Vol 189-190 ◽  
pp. 749-752 ◽  
Author(s):  
Satoshi Kobayashi ◽  
Shuichi Nonomura ◽  
Kenichi Ushikoshi ◽  
Koichi Abe ◽  
Motoi Nishio ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Thin Film Transistor ◽  
Optical And Electrical Properties ◽  
Nano Crystalline

Optical and electrical properties of solution processable TiOx thin films for solar cell and sensor applications

2011 ◽  
Vol 1352 ◽  
Author(s):  
Jiguang Li ◽  
Lin Pu ◽  
Mool C. Gupta
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Resistivity ◽  
Refractive Index ◽  
Solar Cells ◽  
Solar Cell ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Electrical Resistance ◽  
Optical And Electrical Properties

ABSTRACTRecently, few tens of nanometer thin films of TiOx have been intensively studied in applications for organic solar cells as optical spacers, environmental protection and hole blocking. In this paper we provide initial measurements of optical and electrical properties of TiOx thin films and it’s applications in solar cell and sensor devices. The TiOx material was made through hydrolysis of the precursor synthesized from titanium isopropoxide, 2-methoxyethanol, and ethanolamine. The TiOx thin films of thickness between 20 nm to 120 nm were obtained by spin coating process. The refractive index of TiOx thin films were measured using an ellipsometric technique and an optical reflection method. At room temperature, the refractive index of TiOx thin film was found to be 1.77 at a wavelength of 600 nm. The variation of refractive index under various thermal annealing conditions was also studied. The increase in refractive index with high temperature thermal annealing process was observed, allowing the opportunity to obtain refractive index values between 1.77 and 2.57 at a wavelength 600 nm. The refractive index variation is due to the TiOx phase and density changes under thermal annealing.The electrical resistance was measured by depositing a thin film of TiOx between ITO and Al electrode. The electrical resistivity of TiOx thin film was found to be 1.7×107 Ω.cm as measured by vertical transmission line method. We have also studied the variation of electrical resistivity with temperature. The temperature coefficient of electrical resistance for 60 nm TiOx thin film was demonstrated as - 6×10-3/°C. A linear temperature dependence of resistivity between the temperature values of 20 – 100 °C was observed.The TiOx thin films have been demonstrated as a low cost solution processable antireflection layer for Si solar cells. The results indicate that the TiOx layer can reduce the surface reflection of the silicon as low as commonly used vacuum deposited Si3N4 thin films.

scholarly journals Effect of Temperature on the Properties of Nickel Sulfide Films Performed by Spray Pyrolysis Technique

2020 ◽  
Vol 20 (3) ◽  
pp. 36-51
Author(s):  
A. Gahtar ◽  
S. Benramache ◽  
C. Zaouche ◽  
A. Boukacham ◽  
A. Sayah
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Spray Pyrolysis ◽  
Nickel Sulfide ◽  
Spray Pyrolysis Technique ◽  
Hexagonal Structure ◽  
Effect Of Temperature ◽  
Optical And Electrical Properties ◽  
Xrd Diffraction

AbstractIn this work, we have prepared new materials of the nickel sulfide thin films by using the spray pyrolysis technique for promising co-catalyst to improve the photocatalytic performance or superconductivity. The effect of deposition temperature (523, 573 and 623 K) on structural, optical and electrical properties was investigated. The XRD diffraction shows that the prepared nickel sulfide at 523, 573 and 623 K having an orthorhombic, hexagonal and hexagonal structure, which were Ni3S2, Ni17S18 and NiS2, respectively. The minimum value of crystallite size (45,9 nm) was measured of deposited film at 573K. The thin films prepared at 523 and 573 K have an average transmittance is about 20 %. The prepared Ni1S2 thin film at T=623 K has the lowest calculated optical band gap and Urbach energy. The Ni1S2 thin film also has the best calculated of the refractive index and the extinction coefficient. The FTIR spectrums of the nickel sulfide have various bands such as Ni-S, C-H, O-H, N–H and C-S. The maximum electrical conductivity is 4,29x105 (Ω.cm)−1 was obtained at 573K of the Ni17S18. The nickel sulfide thin films sprayed at 573K have good structural, optical and electrical properties.

Effect of Si substrate modification on improving the crystalline quality, optical and electrical properties of thermally-evaporated BaSi2 thin-films for solar cell applications

2020 ◽  
Vol 34 (08) ◽  
pp. 2050068
Author(s):  
Mai Thi Kieu Lien ◽  
Noritaka Usami
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Modification ◽  
Solar Cell ◽  
Electrical Properties ◽  
Crystalline Quality ◽  
Optical And Electrical Properties ◽  
Si Substrate ◽  
Thermal Evaporation Method ◽  
Substrate Modification

We have grown orthorhombic barium disilicide ([Formula: see text]) thin-films on modified silicon (Si) substrates by a thermal evaporation method. The surface modification of Si substrate was performed by a metal-assisted chemical etching method. The effects of etching time [Formula: see text] on crystalline quality as well as optical and electrical properties of the [Formula: see text] films were investigated. The obtained results showed that substrate modification can enhance the crystalline quality and electrical properties; reduce the light reflection; and increase the absorption of the [Formula: see text] thin-films. The [Formula: see text] of 8 s was chosen as the optimized condition for surface modification of Si substrate. The achieved inferred short-circuit current density, Hall mobility, and minority carrier lifetime of the [Formula: see text] film at [Formula: see text] of 8 s were [Formula: see text], [Formula: see text], and [Formula: see text]s, respectively. These results confirm that the [Formula: see text] thin-film evaporated on the modified Si substrate is a promising absorber for thin-film solar cell applications.

Structural engineering of gold thin films with channel cracks for ultrasensitive strain sensing

2016 ◽  
Vol 3 (3) ◽  
pp. 248-255 ◽  
Author(s):  
Tingting Yang ◽  
Xinming Li ◽  
Xin Jiang ◽  
Shuyuan Lin ◽  
Junchao Lao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Structural Engineering ◽  
Strain Sensors ◽  
Strain Sensing ◽  
Gold Thin Film ◽  
Gold Thin Films

A strain sensing structure with high gauge factors (GFs) is designed by engineering channel cracks in a gold thin film. The developed strain sensors possess GFs as high as 200 (ε < 0.5%), 1000 (0.5% < ε < 0.7%), and even exceeding 5000 (0.7% < ε < 1%).

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