scholarly journals Structural, Electrical, and Optical Properties of Reactively Sputtered Ag-Cu-O Films

2012 ◽  
Vol 2012 ◽  
pp. 1-7
Author(s):  
P. Narayana Reddy ◽  
A. Sreedhar ◽  
M. Hari Prasad Reddy ◽  
S. Uthanna
Keyword(s):  
Optical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rf Magnetron Sputtering ◽  
Crystallographic Structure ◽  
Low Oxygen ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Partial Pressures ◽  
Effect Of Oxygen

Thin films of silver-copper-oxide were deposited on glass substrates by RF magnetron sputtering of Ag80Cu20 target under various oxygen partial pressures in the range 5×10−3–8×10−2 Pa. The effect of oxygen partial pressure on the crystallographic structure and surface morphology and electrical and optical properties was systematically studied and the results were reported. The oxygen content in the films was correlated with the oxygen partial pressure maintained during the growth of the films. The films which formed at low oxygen partial pressure of 5×10−3 Pa were mixed in phase of Ag2Cu2O3 and Ag while those deposited at 2×10−2 Pa were grown with Ag2Cu2O3 and Ag2Cu2O4 phases. The films which formed at oxygen partial pressure of 2×10−2 Pa showed electrical resistivity of 2.3 Ωcm and optical band gap of 1.47 eV.

scholarly journals Process-Parameter-Dependent Structural, Electrical, and Optical Properties of Reactive Magnetron Sputtered Ag-Cu-O Films

2011 ◽  
Vol 2011 ◽  
pp. 1-8 ◽  
Author(s):  
P. Narayana Reddy ◽  
A. Sreedhar ◽  
M. Hari Prasad Reddy ◽  
S. Uthanna ◽  
J. F. Pierson
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rf Magnetron Sputtering ◽  
Low Oxygen ◽  
Electrical And Optical Properties ◽  
Partial Pressures ◽  
Effect Of Oxygen ◽  
Parameter Dependent

Silver-copper-oxide thin films were formed by RF magnetron sputtering technique using Ag80Cu20target at various oxygen partial pressures in the range 5 × 10−3–8 ×10−2 Pa and substrate temperatures in the range 303–523 K. The effect of oxygen partial pressure and substrate temperature on the structure and surface morphology and electrical and optical properties of the films were studied. The Ag-Cu-O films formed at room temperature (303 K) and at low oxygen partial pressure of 5 × 10−3 Pa were mixed phase of Ag2Cu2O3and Ag, while those deposited at 2 × 10−2 Pa were composed of Ag2Cu2O4and Ag2Cu2O3phases. The crystallinity of the films formed at oxygen partial pressure of 2 × 10−2Pa increased with the increase of substrate temperature from 303 to 423 K. Further increase of substrate temperature to 523 K, the films were decomposed in to Ag2O and Ag phases. The electrical resistivity of the films decreased from 0.8 Ωcm with the increase of substrate temperature from 303 to 473 K due to improvement in the crystallinity of the phase. The optical band gap of the Ag-Cu-O films increased from 1.47 to 1.83 eV with the increase of substrate temperature from 303 to 473 K.

scholarly journals Effect of Oxygen Partial Pressure on the Electrical and Optical Properties of DC Magnetron Sputtered AmorphousTiO2Films

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
M. Chandra Sekhar ◽  
P. Kondaiah ◽  
B. Radha Krishna ◽  
S. Uthanna
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Optical Transmittance ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Schottky Effect ◽  
Partial Pressures ◽  
Effect Of Oxygen

Titanium dioxide (TiO2) thin films were deposited on p-Si (100) and Corning glass substrates held at room temperature by DC magnetron sputtering at different oxygen partial pressures in the range9×10−3–9×10−2 Pa. The influence of oxygen partial pressure on the structural, electrical, and optical properties of the deposited films was systematically studied. XPS studies confirmed that the film formed at an oxygen partial pressure of6×10−2 Pa was nearly stoichiometric. TiO2films formed at all oxygen partial pressures were X-ray amorphous. The optical transmittance gradually increased and the absorption edge shifted towards shorter wavelengths with the increase of oxygen partial pressure. Thin film capacitors with configuration of Al/TiO2/p-Si have been fabricated. The results showed that the leakage current density of films formed decreased with the increase of oxygen partial pressure to6×10−2Pa owing to the decrease in the oxygen defects in the films thereafter it was increased. The current transport mechanism in the TiO2thin films is shown to be Schottky effect and Fowler-Nordheim tunnelling currents.

scholarly journals Growth of MoO3 Films by RF Magnetron Sputtering: Studies on the Structural, Optical, and Electrochromic Properties

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
S. Subbarayudu ◽  
V. Madhavi ◽  
S. Uthanna
Keyword(s):  
Magnetron Sputtering ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rf Magnetron Sputtering ◽  
Crystallographic Structure ◽  
Silicon Substrates ◽  
Glass Substrates ◽  
Partial Pressures ◽  
Vibrational Bands ◽  
The Fourier Transform

Molybdenum oxide (MoO3) films were deposited on glass and silicon substrates held at temperature 473 K by RF magnetron sputtering of molybdenum target at various oxygen partial pressures in the range 8×10-5–8×10-4 mbar. The deposited MoO3 films were characterized for their chemical composition, crystallographic structure, surface morphology, chemical binding configuration, and optical properties. The films formed at oxygen partial pressure of 4×10-4 mbar were nearly stoichiometric and nanocrystalline MoO3 with crystallite size of 27 nm. The Fourier transform infrared spectrum of the films formed at 4×10-4 mbar exhibited the characteristics vibrational bands of MoO3. The optical band gap of the films increased from 3.11 to 3.28 eV, and the refractive index increased from 2.04 to 2.16 with the increase of oxygen partial pressure from 8×10-5 to 8×10-4 mbar, respectively. The electrochromic performance of MoO3 films formed on ITO coated glass substrates was studied and achieved the optical modulation of about 13% with color efficiency of about 20 cm2/C.

OXYGEN PARTIAL PRESSURE AND SUBSTRATE BIAS VOLTAGE INFLUENCED STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF RF MAGNETRON SPUTTERED Ag2Cu2O3 FILMS

2011 ◽  
Vol 10 (04n05) ◽  
pp. 653-657 ◽  
Author(s):  
S. UTHANNA ◽  
M. HARI PRASAD REDDY ◽  
J. F. PIERSON
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Bias Voltage ◽  
Single Phase ◽  
Rf Magnetron Sputtering ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Glass Substrates ◽  
Partial Pressures ◽  
20 Nm

Ag2Cu2O3 films were deposited on glass substrates held at 303 K by RF magnetron sputtering of Ag70 Cu30 target at different oxygen partial pressures and substrate bias voltages. Single phase Ag2Cu2O3 films were formed at an oxygen partial pressure of 2 × 10-2 Pa . The films deposited at oxygen partial pressure 2 × 10-2 Pa and substrate bias voltage of -60 V were nanocrystalline with crystallite size of 20 nm, low electrical resistivity of 3.9 Ωcm and optical band gap of 2.02 eV.

Tensile Properties and Creep Behavior of SiC-Based Fibers under Various Oxygen Partial Pressures

2005 ◽  
Vol 475-479 ◽  
pp. 1333-1336 ◽  
Author(s):  
Jan Ji Sha ◽  
J.S. Park ◽  
Tatsuya Hinoki ◽  
Akira Kohyama ◽  
J. Yu
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Tensile Properties ◽  
Creep Behavior ◽  
Elevated Temperatures ◽  
Low Oxygen ◽  
X Ray Diffraction ◽  
Sic Fibers ◽  
Partial Pressures ◽  
Ar Gas

Three kinds of atmospheres (air, highly-pure Ar and ultra highly-pure Ar gas) with different oxygen partial pressures were applied to investigate the tensile properties and creep behavior of SiC fibers such as Hi-NicalonTM and TyrannoTM-SA. These fibers were annealed and crept at elevated temperatures ranging from1273-1773 K in such environments. After annealing at 1773 K, the room temperature tensile strengths of SiC-based fibers decreased with decreasing the oxygen partial pressure and the near stoichiometric fiber TyrannoTM-SA shows excellent strength retention. At temperatures above the 1573 K, the creep resistance of SiC fibers evaluated by bending stress relaxation (BSR) method under high oxygen partial pressure was lower than that of in low oxygen partial pressure. The microstructural features on these fibers were examined by scanning electron microscopy (SEM) and X-ray diffraction (XRD).

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