scholarly journals Growth of MoO3 Films by RF Magnetron Sputtering: Studies on the Structural, Optical, and Electrochromic Properties

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
S. Subbarayudu ◽  
V. Madhavi ◽  
S. Uthanna
Keyword(s):  
Magnetron Sputtering ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rf Magnetron Sputtering ◽  
Crystallographic Structure ◽  
Silicon Substrates ◽  
Glass Substrates ◽  
Partial Pressures ◽  
Vibrational Bands ◽  
The Fourier Transform

Molybdenum oxide (MoO3) films were deposited on glass and silicon substrates held at temperature 473 K by RF magnetron sputtering of molybdenum target at various oxygen partial pressures in the range 8×10-5–8×10-4 mbar. The deposited MoO3 films were characterized for their chemical composition, crystallographic structure, surface morphology, chemical binding configuration, and optical properties. The films formed at oxygen partial pressure of 4×10-4 mbar were nearly stoichiometric and nanocrystalline MoO3 with crystallite size of 27 nm. The Fourier transform infrared spectrum of the films formed at 4×10-4 mbar exhibited the characteristics vibrational bands of MoO3. The optical band gap of the films increased from 3.11 to 3.28 eV, and the refractive index increased from 2.04 to 2.16 with the increase of oxygen partial pressure from 8×10-5 to 8×10-4 mbar, respectively. The electrochromic performance of MoO3 films formed on ITO coated glass substrates was studied and achieved the optical modulation of about 13% with color efficiency of about 20 cm2/C.

scholarly journals Structural, Electrical, and Optical Properties of Reactively Sputtered Ag-Cu-O Films

2012 ◽  
Vol 2012 ◽  
pp. 1-7
Author(s):  
P. Narayana Reddy ◽  
A. Sreedhar ◽  
M. Hari Prasad Reddy ◽  
S. Uthanna
Keyword(s):  
Optical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rf Magnetron Sputtering ◽  
Crystallographic Structure ◽  
Low Oxygen ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Partial Pressures ◽  
Effect Of Oxygen

Thin films of silver-copper-oxide were deposited on glass substrates by RF magnetron sputtering of Ag80Cu20 target under various oxygen partial pressures in the range 5×10−3–8×10−2 Pa. The effect of oxygen partial pressure on the crystallographic structure and surface morphology and electrical and optical properties was systematically studied and the results were reported. The oxygen content in the films was correlated with the oxygen partial pressure maintained during the growth of the films. The films which formed at low oxygen partial pressure of 5×10−3 Pa were mixed in phase of Ag2Cu2O3 and Ag while those deposited at 2×10−2 Pa were grown with Ag2Cu2O3 and Ag2Cu2O4 phases. The films which formed at oxygen partial pressure of 2×10−2 Pa showed electrical resistivity of 2.3 Ωcm and optical band gap of 1.47 eV.

Influence of partial pressure of oxygen on thermochromic performance of VO2 thin films by RF magnetron sputtering

2019 ◽  
Vol 33 (28) ◽  
pp. 1950349 ◽  
Author(s):  
Pengfei Guo ◽  
Caijuan Liu ◽  
Junhui Liu ◽  
Ruoping Li ◽  
Mingju Huang
Keyword(s):  
Magnetron Sputtering ◽  
Partial Pressure ◽  
Rf Magnetron Sputtering ◽  
Solar Modulation ◽  
Partial Pressure Of Oxygen ◽  
Smart Windows ◽  
Glass Substrates ◽  
Partial Pressures ◽  
Phase Surface ◽  
Vo2 Thin Films

In order to obtain a material with high solar modulation ability [Formula: see text] and crystalline quality, [Formula: see text] films were prepared on quartz glass substrates using RF magnetron sputtering under various oxygen partial pressures. Their phase, surface, transmittance, and film sheet resistance properties were analyzed. As the oxygen partial pressure increased, the luminous transmittance [Formula: see text] of the film increased to as high as 55.6%, while the [Formula: see text] first increased to a maximum of 10.8% and then decreased. This paper is a meaningful aid in the application of [Formula: see text] films to smart windows.

scholarly journals Sputter Power Influenced Structural, Electrical, and Optical Behaviour of Nanocrystalline CuNiO2 Films Formed by RF Magnetron Sputtering

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
A. Sreedhar ◽  
M. Hari Prasad Reddy ◽  
S. Uthanna ◽  
J. F. Pierson
Keyword(s):  
Magnetron Sputtering ◽  
Nickel Oxide ◽  
Rf Magnetron Sputtering ◽  
Spectroscopic Studies ◽  
Crystallographic Structure ◽  
Silicon Substrates ◽  
Copper Nickel ◽  
Alloy Target ◽  
Vibrational Bands ◽  
Binding Configuration

Copper nickel oxide (CuNiO2) films were deposited on glass and silicon substrates using RF magnetron sputtering of equimolar Cu50Ni50 alloy target at different sputter powers in the range of 3.1–6.1 W/cm2. The effect of sputter power on the chemical composition, crystallographic structure, chemical binding configuration, surface morphology, and electrical and optical properties of CuNiO2 films was investigated. The films formed at sputter power of 5.1 W/cm2 were of nearly stoichiometric CuNiO2. Fourier transform infrared spectroscopic studies indicated the presence of the characteristic vibrational bands of copper nickel oxide. The nanocrystalline CuNiO2 films were formed with the increase in grain size from 75 to 120 nm as the sputter power increased from 3.1 to 5.1 W/cm2. The stoichiometric CuNiO2 films formed at sputter power of 5.1 W/cm2 exhibited electrical resistivity of 27 Ωcm, Hall mobility of 21 cm2/Vsec, and optical bandgap of 1.93 eV.

OXYGEN PARTIAL PRESSURE AND SUBSTRATE BIAS VOLTAGE INFLUENCED STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF RF MAGNETRON SPUTTERED Ag2Cu2O3 FILMS

2011 ◽  
Vol 10 (04n05) ◽  
pp. 653-657 ◽  
Author(s):  
S. UTHANNA ◽  
M. HARI PRASAD REDDY ◽  
J. F. PIERSON
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Bias Voltage ◽  
Single Phase ◽  
Rf Magnetron Sputtering ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Glass Substrates ◽  
Partial Pressures ◽  
20 Nm

Ag2Cu2O3 films were deposited on glass substrates held at 303 K by RF magnetron sputtering of Ag70 Cu30 target at different oxygen partial pressures and substrate bias voltages. Single phase Ag2Cu2O3 films were formed at an oxygen partial pressure of 2 × 10-2 Pa . The films deposited at oxygen partial pressure 2 × 10-2 Pa and substrate bias voltage of -60 V were nanocrystalline with crystallite size of 20 nm, low electrical resistivity of 3.9 Ωcm and optical band gap of 2.02 eV.

scholarly journals Process-Parameter-Dependent Structural, Electrical, and Optical Properties of Reactive Magnetron Sputtered Ag-Cu-O Films

2011 ◽  
Vol 2011 ◽  
pp. 1-8 ◽  
Author(s):  
P. Narayana Reddy ◽  
A. Sreedhar ◽  
M. Hari Prasad Reddy ◽  
S. Uthanna ◽  
J. F. Pierson
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rf Magnetron Sputtering ◽  
Low Oxygen ◽  
Electrical And Optical Properties ◽  
Partial Pressures ◽  
Effect Of Oxygen ◽  
Parameter Dependent

Silver-copper-oxide thin films were formed by RF magnetron sputtering technique using Ag80Cu20target at various oxygen partial pressures in the range 5 × 10−3–8 ×10−2 Pa and substrate temperatures in the range 303–523 K. The effect of oxygen partial pressure and substrate temperature on the structure and surface morphology and electrical and optical properties of the films were studied. The Ag-Cu-O films formed at room temperature (303 K) and at low oxygen partial pressure of 5 × 10−3 Pa were mixed phase of Ag2Cu2O3and Ag, while those deposited at 2 × 10−2 Pa were composed of Ag2Cu2O4and Ag2Cu2O3phases. The crystallinity of the films formed at oxygen partial pressure of 2 × 10−2Pa increased with the increase of substrate temperature from 303 to 423 K. Further increase of substrate temperature to 523 K, the films were decomposed in to Ag2O and Ag phases. The electrical resistivity of the films decreased from 0.8 Ωcm with the increase of substrate temperature from 303 to 473 K due to improvement in the crystallinity of the phase. The optical band gap of the Ag-Cu-O films increased from 1.47 to 1.83 eV with the increase of substrate temperature from 303 to 473 K.

The effect of oxygen partial pressure during cooling on lead zirconate titanate thin film growth by using rf magnetron sputtering method

1998 ◽  
Vol 13 (12) ◽  
pp. 3442-3448 ◽  
Author(s):  
Dong Joo Kim ◽  
Tae Song Kim ◽  
Jeon Kook Lee ◽  
Hyung Jin Jung
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Lead Zirconate Titanate ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Zirconate Titanate ◽  
Pzt Films ◽  
Grain Distribution

The lead zirconate titanate (PZT) thin film was deposited on platinized silicon wafer substrate by the rf magnetron sputtering method. In order to investigate the effect of cooling ambient, oxygen partial pressure was controlled during cooling PZT films. The PZT films cooled at lower oxygen partial pressure had perovskite phase and pyrochlore phase in both as-grown and postannealed films, but in the PZT films cooled at higher oxygen partial pressure, pyrochlore phases were not detected by XRD. As the oxygen partial pressure became lower during cooling, the capacitors had low values of remanent polarization and coercive field for as-grown films. The PZT capacitor with such a low value was recovered by postannealing in air, but its electrical properties had the same tendency before and after annealing. Microstructure was also affected by cooling ambient. Higher oxygen partial pressure on cooling reduced the number of very fine grains, and enhanced uniform grain distribution. Fatigue characteristics were also enhanced by cooling at higher oxygen partial pressure. However, the imprint was negligible irrespective of oxygen partial pressure upon cooling. The cooling procedure at higher oxygen ambients is believed to reduce the amounts of nonferroelectric second phases and oxygen vacancies. We find that oxygen partial pressure during cooling is a considerable process parameter. Therefore, care should be taken in treating the parameter after depositing films.

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