The Impact of Stationary Crossed Electrical and Magnetic Fields on Excess Charge Carriers Generated by Radiation in P-Type Mercury-Cadmium-Telluride Epitaxial Films (Review)

2010 ◽  
Vol 5 (1) ◽  
pp. 66-81
Author(s):  
Vladimir Ya. Kostyuchenko
Keyword(s):  
Magnetic Fields ◽  
Cadmium Telluride ◽  
Mercury Cadmium Telluride ◽  
Epitaxial Films ◽  
Charge Carriers ◽  
Excess Charge ◽  
Diffusion Parameters ◽  
P Type ◽  
The Impact ◽  
And Diffusion

The main characteristics of infrared photodetectors on base of p-type mercury-cadmium-telluride epitaxial films are mainly governed by recombination and diffusion parameters of minor charge carriers. The investigation of excess charge carriers behavior in epitaxial films placed in stationary crossed electrical and magnetic fields is allows determining of this parameters. This paper reviews of such photoelecromagnetic methods for investigation of excess charge carriers’ recombination and diffusion properties as methods of photomagnetic effects and photoconductivity in magnetic fields for Voight and Faradey geometry.

The Network of Photoelectromagnetics Methods For Determination of Recombination and Diffusion Parameters of Charge Carriers in Epitaxial Films Mercury-Cadmium-Telluride p-Type

2011 ◽  
Vol 6 (1) ◽  
pp. 104-115
Author(s):  
Vladimir Ya. Kostyuchenko ◽  
Dmitriy Yu. Protasov
Keyword(s):  
Magnetic Field ◽  
Hall Effect ◽  
Cadmium Telluride ◽  
Mercury Cadmium Telluride ◽  
Epitaxial Films ◽  
Charge Carriers ◽  
Diffusion Parameters ◽  
P Type ◽  
And Diffusion

In this paper the network of photoelectromagnetic methods of definition recombination and diffusion parameters developed for p-type epitaxial mercury-cadmium-tellurium films at temperature 77÷125 K is offered. The network includes the methods based on measurement of photoconductivity in a magnetic field for Voight and Faradey geometry, photomagnetic effect, Hall effect and magnitoresistance

On the time delay of the photoplastic effect

1986 ◽  
Vol 1 (1) ◽  
pp. 3-6 ◽  
Author(s):  
Joseph Pellegrino ◽  
J. M. Galligan
Keyword(s):  
Time Delay ◽  
Temperature Dependence ◽  
Cadmium Telluride ◽  
Deformation Temperature ◽  
Mercury Cadmium Telluride ◽  
Charge Carriers ◽  
Temperature Dependent ◽  
Simple Analysis ◽  
Photoplastic Effect

Photoplasticity in mercury cadmium telluride, Hg1-x Cdx Te with x = 0.3, has been studied as a function of light frequency and deformation temperature. We show that there is an easily measurable time delay accompanying irradiation of the crystal and the change in stress. This time delay is temperature dependent, suggesting a diffusion of charge carriers, introduced by the light, to the interior of the crystal. A simple analysis is given of the observed temperature dependence that is consistent with the experiments.

scholarly journals A Framework for Evaluating Variation in (U-Th)/He Datasets

Minerals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1111
Author(s):  
Francis J. Sousa ◽  
Kenneth A. Farley
Keyword(s):  
Thermal History ◽  
Synthetic Data ◽  
Diffusion Parameters ◽  
Modeling Software ◽  
History Of ◽  
Single Grain ◽  
Thermal Histories ◽  
The Impact ◽  
And Diffusion ◽  
New Framework

This paper presents a framework for evaluating variation in (U-Th)/He datasets. The framework is objective, repeatable, and based on compatibility of thermal histories derived from individual (U-Th)/He dates. The structure of this new method includes three fundamental steps. First, the allowable thermal history of each individual grain is quantitatively constrained with a model. Second, the thermal histories of all grains from a sample are visualized on the same axes. Third, the compatibility of the allowable thermal histories of each individual grain is evaluated. This allows a user to assess whether variation among single grain dates can plausibly be explained (referred to here as legitimate) or not (illegitimate). Additionally, this methodology allows for accurate representation of the impact that illegitimate variation has on the thermal history constraints of a sample. We demonstrate the application of this new framework using a variety of examples from the literature, as well as with synthetic data. Modeling presented here is executed using the modeling software QTQt (version 5.6.0) and the He diffusion kinetics based on the radiation damage accumulation and annealing model, but the framework is designed to be easily adaptable to any modeling software and diffusion parameters.

P-type doping of double layer mercury cadmium telluride for junction formation

1995 ◽  
Vol 24 (5) ◽  
pp. 617-624 ◽  
Author(s):  
L. O. Bubulac ◽  
D. D. Edwall ◽  
S. J. C. Irvine ◽  
E. R. Gertner ◽  
S. H. Shin
Keyword(s):  
Cadmium Telluride ◽  
Double Layer ◽  
Mercury Cadmium Telluride ◽  
Junction Formation ◽  
P Type

Movement of charge carriers in electric and magnetic fields

2020 ◽  
pp. 89-126
Author(s):  
Hermann Kolanoski ◽  
Norbert Wermes
Keyword(s):  
Magnetic Fields ◽  
Transport Equation ◽  
Approximate Solutions ◽  
Critical Energy ◽  
Charge Carriers ◽  
Einstein Relation ◽  
Boltzmann Transport ◽  
Electric And Magnetic Fields ◽  
Electrons And Ions ◽  
And Diffusion

For the detection of charged particles many detector principles exploit the ionisation in sensing layers and the collection of the generated charges by electrical fields on electrodes, from where the signals can be deduced. In gases and liquids the charge carriers are electrons and ions, in semiconductors they are electrons and holes. To describe the ordered and unordered movement of the charge carriers in electric and magnetic fields the Boltzmann transport equation is introduced and approximate solutions are derived. On the basis of the transport equation drift and diffusion are discussed, first in general and then for applications to gases and semiconductors. It turns out that, at least for the simple approximations, the treatment for both media is very similar, for example also for the description of the movement in magnetic fields (Lorentz angle and Hall effect) or of the critical energy (Nernst-Townsend-Einstein relation).

scholarly journals Ion beam induced current analysis in GaN microwires

2020 ◽  
Vol 233 ◽  
pp. 05001
Author(s):  
Dirkjan Verheij ◽  
Marco Peres ◽  
Susana Cardoso ◽  
Luís Cerqueira Alves ◽  
Eduardo Alves ◽  
...  
Keyword(s):  
Ion Beam ◽  
Schottky Contact ◽  
Electrical Characterization ◽  
Charge Carriers ◽  
Excess Charge ◽  
Induced Current ◽  
Particle Detectors ◽  
Metal Organic ◽  
New Generation ◽  
The Impact

GaN is a wide bandgap semiconductor which is expected to withstand high radiation doses. Consequently, it is considered a promising material for new generation particle detectors in radiation related applications. We report on the fabrication and electrical characterization under proton irradiation of single microwire sensors based on a back-to-back Schottky contact configuration. The microwires are grown by metal-organic vapor phase epitaxy and processed into sensors by using optical lithography on dispersed wires. We investigate the impact of the contacts and the semiconductor bulk on the ion beam induced current (IBIC) by irradiating specific areas of the sensor and simultaneously measuring the change in conductivity. We observed that the contribution of the excess charge carriers generated in the depletion regions formed at the contact interfaces is of low influence when compared to the excess charge carriers generated in the microwire bulk.

Iron Gettering at Slip Dislocations in Czochralski Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 211-216 ◽  
Author(s):  
Kevin Lauer ◽  
Martin Herms ◽  
Anett Grochocki ◽  
Joachim Bollmann
Keyword(s):  
Dislocation Density ◽  
Linear Correlation ◽  
Iron Content ◽  
Iron Silicide ◽  
Charge Carriers ◽  
Excess Charge ◽  
The Impact ◽  
Charge Carrier Lifetime ◽  
Excess Charge Carrier

The impact of slip dislocations on the interstitial iron distribution in as-grown CZ silicon wafers is investigated by calibrated MWPCD excess charge carrier lifetime measurements, DLTS measurements and measurements of the dislocation density. In regions of high dislocation density low interstitial iron content as well as low lifetime is observed. A linear correlation between dislocation density and interstitial iron content is found. We explain this linear correlation by the thesis that slip dislocations are 60° dislocations, which have adsorbed one iron atom at each dangling bond along the dislocation axis. Interstitial iron is gettered by slip dislocations but iron silicide, which forms along the dislocation axis, is a very strong recombination center for excess charge carriers as well. Hence, gettering of interstitial iron at slip dislocations does not increase the electrical quality of silicon.

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