A Compact Model of Gate-Voltage-Dependent Quantum Effects in Short-Channel Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

Compact Model ◽

Oxide Semiconductor ◽

Short Channel ◽

Surrounding Gate ◽

Voltage Dependent

Simple Model for Gate-Voltage Dependent Parasitic Resistancein Short Channel Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors

10.1143/jjap.30.l535 ◽

1991 ◽

Vol 30 (Part 2, No. 4A) ◽

pp. L535-L537 ◽

Cited By ~ 2

Author(s):

Jung-Il Lee ◽

Myung-Bok Lee ◽

Sang Young Lee ◽

Kwang Nham Kang ◽

Kyung Sik Yoon

Keyword(s):

Simple Model ◽

Metal Oxide ◽

Gate Voltage ◽

Field Effect ◽

Oxide Semiconductor ◽

Short Channel ◽

Voltage Dependent ◽

Lightly Doped Drain

A compact model for gate tunneling currents in undoped cylindrical surrounding-gate metal-oxide-semiconductor field-effect transistors

Microelectronic Engineering ◽

10.1016/j.mee.2019.111086 ◽

2019 ◽

Vol 216 ◽

pp. 111086

Author(s):

Fatimah Arofiati Noor ◽

Christoforus Bimo ◽

Ibnu Syuhada ◽

Toto Winata ◽

Khairurrijal Khairurrijal

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Compact Model ◽

Oxide Semiconductor ◽

Surrounding Gate ◽

Gate Tunneling ◽

Tunneling Currents

Gate voltage dependent 1/fnoise variance model based on physical noise generation mechanisms in n-channel metal–oxide–semiconductor field-effect transistors

10.7567/jjap.54.04dc10 ◽

2015 ◽

Vol 54 (4S) ◽

pp. 04DC10

Author(s):

Yukiko Arai ◽

Hitoshi Aoki ◽

Fumitaka Abe ◽

Shunichiro Todoroki ◽

Ramin Khatami ◽

...

Keyword(s):

Metal Oxide ◽

Gate Voltage ◽

Field Effect ◽

Oxide Semiconductor ◽

Noise Generation ◽

Variance Model ◽

Voltage Dependent ◽

Generation Mechanisms

A New Two-Dimensional Analytical Threshold Voltage Model for Short-Channel Triple-Material Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

10.1143/jjap.51.054301 ◽

2012 ◽

Vol 51 ◽

pp. 054301 ◽

Cited By ~ 5

Author(s):

Hsin-Kai Wang ◽

Sean Wu ◽

Te-Kuang Chiang ◽

Maw-Shung Lee

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Short Channel ◽

Surrounding Gate ◽

Threshold Voltage Model

A New Two-Dimensional Analytical Threshold Voltage Model for Short-Channel Triple-Material Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

10.7567/jjap.51.054301 ◽

2012 ◽

Vol 51 (5R) ◽

pp. 054301 ◽

Cited By ~ 14

Author(s):

Hsin-Kai Wang ◽

Sean Wu ◽

Te-Kuang Chiang ◽

Maw-Shung Lee

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Short Channel ◽

Surrounding Gate ◽

Threshold Voltage Model

Theory of Short-Channel Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect-Transistors

10.1143/jjap.46.1437 ◽

2007 ◽

Vol 46 (4A) ◽

pp. 1437-1440 ◽

Cited By ~ 15

Author(s):

Guang-Xi Hu ◽

Ran Liu ◽

Ting-Ao Tang ◽

Shi-Jin Ding ◽

Ling-Li Wang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Short Channel ◽

Surrounding Gate

Modeling the performance of short-channel fully depleted silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs)

Silicon-On-Insulator (SOI) Technology ◽

10.1533/9780857099259.1.77 ◽

2014 ◽

pp. 77-101

Author(s):

S. Ghosh

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted

A Simple Model for Substrate Current Characteristics in Short-Channel Ultrathin-Film Metal-Oxide-Semiconductor Field-Effect Transistors by Separation by Implanted Oxygen

10.1143/jjap.34.4722 ◽

1995 ◽

Vol 34 (Part 1, No. 9A) ◽

pp. 4722-4727 ◽

Cited By ~ 6

Author(s):

Yasuhisa Omura

Keyword(s):

Simple Model ◽

Metal Oxide ◽

Field Effect ◽

Ultrathin Film ◽

Oxide Semiconductor ◽

Short Channel ◽

Substrate Current ◽

Current Characteristics

A New Two-Dimensional Analytical Model for Short-Channel Symmetrical Dual-Material Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors

10.1143/jjap.46.3283 ◽

2007 ◽

Vol 46 (6A) ◽

pp. 3283-3290 ◽

Cited By ~ 20

Author(s):

Te-Kuang Chiang ◽

Mei-Li Chen

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Oxide Semiconductor ◽

Double Gate ◽

Two Dimensional ◽

Short Channel ◽

Dual Material

A Physics-Based Short-Channel Current-Voltage Model for Lightly-Doped-Drain Metal-Oxide-Semiconductor Field-Effect-Transistors

10.1143/jjap.36.3448 ◽

1997 ◽

Vol 36 (Part 1, No. 6A) ◽

pp. 3448-3459 ◽

Cited By ~ 5

Author(s):

Man-Chun Hu ◽

Sheng-Lyang Jang ◽

Chwan-Gwo Chyau

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Short Channel ◽

Channel Current ◽

Current Voltage ◽

Lightly Doped Drain