Gate voltage dependent 1/fnoise variance model based on physical noise generation mechanisms in n-channel metal–oxide–semiconductor field-effect transistors

2015 ◽  
Vol 54 (4S) ◽  
pp. 04DC10
Author(s):  
Yukiko Arai ◽  
Hitoshi Aoki ◽  
Fumitaka Abe ◽  
Shunichiro Todoroki ◽  
Ramin Khatami ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Noise Generation ◽  
Variance Model ◽  
Voltage Dependent ◽  
Generation Mechanisms

ANOMALOUS LENGTH DEPENDENCE OF THE CONDUCTANCE OF A 2D CHANNEL NEAR THE THRESHOLD

1994 ◽  
Vol 08 (07) ◽  
pp. 445-454
Author(s):  
M. E. RAIKH ◽  
F. G. PIKUS
Keyword(s):  
Metal Oxide ◽  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Channel Length ◽  
Metal Oxide Semiconductor ◽  
Potential Profile ◽  
Oxide Semiconductor ◽  
Assisted Tunneling ◽  
Channel Region

The modification of the potential profile in the channel of metal oxide semiconductor field effect transistors, caused by electrons in n+ contacts attracted to the surface by the gate voltage, is considered. Effective narrowing of the channel region, in which the transport is due to the phonon-assisted tunneling, could be responsible for the dramatic increase of the conductance with channel length in the strongly localized regime, as observed by Popović, Fowler, and Washburn.1

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