scholarly journals Study on Noise Performance Enhancement of Tunable Low Noise Amplifier Using CMOS Active Inductor

Author(s):  
Young-Kyu Sung ◽  
Kyung-Sik Yoon
2018 ◽  
Vol 7 (2.24) ◽  
pp. 448
Author(s):  
S Manjula ◽  
M Malleshwari ◽  
M Suganthy

This paper presents a low power Low Noise Amplifier (LNA) using 0.18µm CMOS technology for ultra wide band (UWB) applications. gm boosting common gate (CG) LNA is designed to improve the noise performance.  For the reduction of on chip area, active inductor is employed at the input side of the designed LNA for input impedance matching. The proposed UWB LNA is designed using Advanced Design System (ADS) at UWB frequency of 3.1-10.6 GHz. Simulation results show that the gain of 10.74+ 0.01 dB, noise figure is 4.855 dB, input return loss <-13 dB and 12.5 mW power consumption.  


Integration ◽  
2016 ◽  
Vol 52 ◽  
pp. 323-333 ◽  
Author(s):  
A. Saberkari ◽  
Sh Kazemi ◽  
V. Shirmohammadli ◽  
M.C.E. Yagoub

2020 ◽  
Vol 9 (2) ◽  
pp. 272
Author(s):  
G. Thirunavukkarasu ◽  
G. Murugesan

The low power consumption devices are frequently focused in design and manufacturing wireless communication system. This paper gives a systematic design of a low noise amplifier for WLAN application aimed to obtain minimum noise figure. The simulation result shows that the noise figure is in the appreciable level (1.67 dB). The maximum gain is greater than 10 dB. These are the predominant requirements of an LNA. Also it posses good stability and the LNA design uses pHEMT for its appreciable noise performance.  


IJARCCE ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 166-172
Author(s):  
Subhashini V. ◽  
Maheswari Dr.M. ◽  
Abinaya A.

2007 ◽  
Vol 54 (1) ◽  
pp. 160-162 ◽  
Author(s):  
W.-C. Hua ◽  
H.-L. Chang ◽  
T. Wang ◽  
C.-Y. Lin ◽  
C.-P. Lin ◽  
...  

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