Chemical vapor deposition condition dependence of reconstructed surfaces on 4H-SiC (0001), (000$\bar{{\bf{1}}}$), and (1$\bar{{\bf{1}}}$00) surfaces

2019 ◽  
Vol 58 (11) ◽  
pp. 115501
Author(s):  
Kenta Chokawa ◽  
Emi Makino ◽  
Norikazu Hosokawa ◽  
Shoichi Onda ◽  
Yoshihiro Kangawa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Condition Dependence ◽  
Deposition Condition ◽  
Reconstructed Surfaces

Growth of Highly Luminescent Silicon Nanocrystals by Rapid Thermal Chemical Vapor Deposition

2005 ◽  
Vol 277-279 ◽  
pp. 977-982 ◽  
Author(s):  
Hea Jeong Cheong ◽  
Jung Hyun Kang ◽  
Jae Kwon Kim ◽  
Kim Yong
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Nanocrystals ◽  
Quantum Confinement Effect ◽  
Chemical Vapor ◽  
Thickness Variation ◽  
Deposition Condition ◽  
Thermal Chemical Vapor Deposition ◽  
Si Nanocrystals ◽  
Si Wafer

We investigate the growth of highly luminescent silicon nanocrystals by rapid thermal chemical vapor deposition (RTCVD), employing SiH4 and N2O as source gases. For [N2O]/[SiH4] = 7 ∼ 8 and a growth temperature of 650°C, we obtain the optimized deposition condition for silicon rich oxide (SRO) layer having highly luminescent Si nanocrystals after post-deposition annealing. The cross sectional transmission electron microscope investigation reveals the existence of Si nanocrystals in the SRO matrix. Thus, the photoluminescence (PL) from the SRO layer is attributed to the quantum confinement effect of carriers in Si nanocrystals. Based on a single layer growth study, we fabricate ultra-thin SRO/SiO2 superlattice having 25 periods on a 3-inch Si wafer. The superlattice has continuous thickness variation from the center to the edge positions of the Si wafer due to inherent wafer temperature variation during growth. Photoluminescence spectra show a systematic blue-shift from a thicker position (center position) to a thinner position (edge position) which is indicative of nanocrystal size control by SRO layer thickness in the superlattice.

Effects of Fe film Thickness and Ammonia on the Growth Behavior of Carbon Nanotubes grown by thermal Chemical Vapor Deposition

2001 ◽  
Vol 706 ◽  
Author(s):  
Jung Inn Sohn ◽  
Chel-Jong Choi ◽  
Tae-Yeon Seong ◽  
Seonghoon Lee
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Surface Region ◽  
Film Deposition ◽  
Condition Dependence ◽  
Pretreatment Condition ◽  
Thermal Chemical Vapor Deposition

AbstractThe growth behaviour of carbon nanotubes on the Fe-deposited Si (001) substrates by thermal chemical vapor deposition (CVD) has been investigated using transmission electron microscopy (TEM), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The Fe films are deposited for 20 s–20 min by pulse-laser deposition. SEM results show that the growth characteristics of carbon nanotubes strongly depend on the Fe film deposition time. TEM and SEM results show that the pretreatment annealing at 800 °C causes the continuous Fe films to be broken up into nanoparticles 8–50 nm across and discontinuous islands 100 nm– 1.1 μm in size. It is shown that the Fe nanoparticles are essentially required for the formation of aligned carbon nanotubes. SEM results show that the growth behaviors of carbon nanotubes are strongly dependent on the pretreatment atmospheres. In addition, for the Ar gas-pretreated sample, a carbonaceous layer is formed near the surface region. TEM results show direct evidence that a base growth mode is responsible for the growth of carbon nanotubes in the present work. Based on the microscopy results, the pretreatment condition dependence of the growth behaviors of carbon nanotubes is discussed.

scholarly journals Effects of catalyst support and chemical vapor deposition condition on synthesis of multi-walled carbon nanocoils

2016 ◽  
Author(s):  
Yoshiyuki Suda ◽  
Tetsuo Iida ◽  
Hirofumi Takikawa ◽  
Toru Harigai ◽  
Hitoshi Ue ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Catalyst Support ◽  
Chemical Vapor ◽  
Deposition Condition

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

Coating of continuous carbon fibers with double layers by chemical vapor deposition

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-885-Pr3-892 ◽  
Author(s):  
N. Popovska ◽  
S. Schmidt ◽  
E. Edelmann ◽  
V. K. Wunder ◽  
H. Gerhard ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Fibers ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Double Layers
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