Optimization of atomic layer deposition temperature of ZrO2 protective coat for GaInAsP photonic crystal nanolaser sensor

2019 ◽  
Vol 59 (1) ◽  
pp. 012001
Author(s):  
Akihiro Sakata ◽  
Keisuke Watanabe ◽  
Toshihiko Baba
Keyword(s):  
Photonic Crystal ◽  
Atomic Layer Deposition ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Protective Coat

Atomic layer deposition of noble metals: Exploration of the low limit of the deposition temperature

2004 ◽  
Vol 19 (11) ◽  
pp. 3353-3358 ◽  
Author(s):  
Titta Aaltonen ◽  
Mikko Ritala ◽  
Yung-Liang Tung ◽  
Yun Chi ◽  
Kai Arstila ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Crystal Orientation ◽  
Deposition Temperature ◽  
Noble Metals ◽  
Film Growth ◽  
Atomic Layer ◽  
Temperature Limit ◽  
Pure Oxygen ◽  
Layer Deposition

The low limit of the deposition temperature for atomic layer deposition (ALD) of noble metals has been studied. Two approaches were taken; using pure oxygen instead of air and using a noble metal starting surface instead of Al2O3. Platinum thin films were obtained by ALD from MeCpPtMe3 and pure oxygen at deposition temperature as low as 200 °C, which is significantly lower than the low-temperature limit of300 °C previously reported for the platinum ALD process in which air was used as the oxygen source. The platinum films grown in this study had smooth surfaces, adhered well to the substrate, and had low impurity contents. ALD of ruthenium, on the other hand, took place at lower deposition temperatures on an iridium seed layer than on an Al2O3 layer. On iridium surface, ruthenium films were obtained from RuCp2 and oxygen at 225 °C and from Ru(thd)3 and oxygen at 250 °C, whereas no films were obtained on Al2O3 at temperatures lower than 275 and 325 °C, respectively. The crystal orientation of the ruthenium films was found to depend on the precursor. ALD of palladium from a palladium β-ketoiminate precursor and oxygen at 250 and 275 °C was also studied. However, the film-growth rate did not saturate to a constant level when the precursor pulse times were increased.

Non-laminated growth of chlorine-doped zinc oxide films by atomic layer deposition at low temperatures

2015 ◽  
Vol 3 (32) ◽  
pp. 8336-8343 ◽  
Author(s):  
Yong-June Choi ◽  
Kyung-Mun Kang ◽  
Hong-Sub Lee ◽  
Hyung-Ho Park
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Low Temperatures ◽  
Deposition Temperature ◽  
Oxide Films ◽  
Atomic Layer ◽  
Zinc Oxide Films ◽  
Chlorine Doping ◽  
Layer Deposition ◽  
Low Deposition Temperature

Chlorine doping in a ZnO matrix to a concentration of 0.65 ± 0.05 at% was accomplished via atomic layer deposition using a home-made chlorine source at a low deposition temperature of 140 °C.

Surface passivation of a photonic crystal band-edge laser by atomic layer deposition of SiO2and its application for biosensing

Nanoscale ◽  
2015 ◽  
Vol 7 (8) ◽  
pp. 3565-3571 ◽  
Author(s):  
Hyungrae Cha ◽  
Jeongkug Lee ◽  
Luke R. Jordan ◽  
Si Hoon Lee ◽  
Sang-Hyun Oh ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Atomic Layer Deposition ◽  
Surface Passivation ◽  
Atomic Layer ◽  
Band Edge ◽  
Layer Deposition

scholarly journals Positive onset potential and stability of Cu2O-based photocathodes in water splitting by atomic layer deposition of a Ga2O3buffer layer

2015 ◽  
Vol 8 (5) ◽  
pp. 1493-1500 ◽  
Author(s):  
Changli Li ◽  
Takashi Hisatomi ◽  
Osamu Watanabe ◽  
Mamiko Nakabayashi ◽  
Naoya Shibata ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Water Splitting ◽  
Energy Band ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Band Alignment ◽  
Onset Potential ◽  
Layer Deposition

The improved energy band alignment of Pt/TiO2/Ga2O3/Cu2O structure results in a positive onset potential of ∼1 Vvs.RHE and a stable cathodic photocurrent under appropriate TiO2deposition temperature.

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