Self-Heating Effects and Analog Performance Optimization of Fin-Type Field-Effect Transistors

2013 ◽  
Vol 52 (4S) ◽  
pp. 04CC03 ◽  
Author(s):  
Tsunaki Takahashi ◽  
Nobuyasu Beppu ◽  
Kunro Chen ◽  
Shunri Oda ◽  
Ken Uchida
Keyword(s):  
Performance Optimization ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Self Heating ◽  
Heating Effects ◽  
Analog Performance

Strained-Si Mos Field-Effect Transistors: Building Devices on Relaxed -SI1−xGEx Buffer Layers

1995 ◽  
Vol 379 ◽  
Author(s):  
Jeffrey J. Welser
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Buffer Layers ◽  
Mos Transistors ◽  
Strained Si ◽  
Self Heating ◽  
Experimental Application ◽  
Heating Effects ◽  
Enhanced Mobility ◽  
Output Characteristics

ABSTRACTThe experimental application of strained-Si / relaxed-Si1−xGex heterostructures to n-MOSFETs is discussed, focusing on the enhanced mobility provided by the strain. This paper provides an overview of the theoretically-predicted electronic properties of these heterostructures, as well as their growth. Several practical issues which arise in MOS applications are covered, including the effect of the relaxed-Si1−xGex, buffer layers on diode performance, and the observation of self-heating effects in the output characteristics of the MOS transistors.

scholarly journals Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?

2020 ◽  
Vol 2 (9) ◽  
pp. 4179-4186 ◽  
Author(s):  
Pedro C. Feijoo ◽  
Francisco Pasadas ◽  
Marlene Bonmann ◽  
Muhammad Asad ◽  
Xinxin Yang ◽  
...  
Keyword(s):  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drift Diffusion Model ◽  
Drift Diffusion ◽  
Velocity Saturation ◽  
Self Heating ◽  
Heating Effects ◽  
Carrier Velocity ◽  
High Frequency Performance

A drift–diffusion model including self-heating effects in graphene transistors to investigate carrier velocity saturation for optimal high frequency performance.

Analysis of Thermal Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Using Micro-Raman Spectroscopy

2021 ◽  
Vol 21 (11) ◽  
pp. 5736-5741
Author(s):  
Jengsu Yoo ◽  
Soo-Kyung Chang ◽  
Gunwoo Jung ◽  
Kyuheon Kim ◽  
Tae-Soo Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Heat Dissipation ◽  
Field Effect Transistors ◽  
Thermal Characteristics ◽  
Electrode Structure ◽  
Self Heating ◽  
Gate Structure ◽  
Heating Effects ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

We investigated the heat dissipation in heterostructure field-effect transistors (HFETs) using microRaman measurement of the temperature in active AIGaN/GaN. By varying the gate structure, the heat dissipation through the gate was clearly revealed. The temperature increased to 120 °C at the flat gate device although the inserted gate increased to only 37 °C. Our results showed that the inserted gate structure reduced the self-heating effect by three times compared to the flat gate structure. Temperature mapping using micro-Raman measurement confirmed that the temperature of the near gate area was lower than that of the near drain area. This indicated that the inserted gate electrode structure effectively prohibited self-heating effects.

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