Impact of Parasitic Bipolar Effect on Single-Event Upset in p-Type Metal–Oxide–Semiconductor Field Effect Transistor with Embedded SiGe

2013 ◽  
Vol 52 (4S) ◽  
pp. 04CC15 ◽  
Author(s):  
Takashi Kato ◽  
Taiki Uemura ◽  
Hiroko Mori ◽  
Yoshihiro Ikeda ◽  
Kaina Suzuki ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Single Event Upset ◽  
Single Event ◽  
Effect Transistor ◽  
P Type

An asymmetric Si/Si1−xGex channel vertical p-type metal-oxide-semiconductor field-effect transistor

2001 ◽  
Vol 45 (2) ◽  
pp. 281-285 ◽  
Author(s):  
Xiangdong Chen ◽  
Qiqing Ouyang ◽  
Sankaran Kartik Jayanarayanan ◽  
Freek E. Prins ◽  
Sanjay Banerjee
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Effect Transistor ◽  
P Type

Radiation damage of Si1-xGex S/D p-type metal oxide semiconductor field effect transistor with different Ge concentrations

2012 ◽  
Vol 520 (8) ◽  
pp. 3337-3340 ◽  
Author(s):  
T. Nakashima ◽  
T. Idemoto ◽  
I. Tsunoda ◽  
K. Takakura ◽  
M. Yoneoka ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Radiation Damage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Effect Transistor ◽  
P Type
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