Area-efficient reconfigurable ring oscillator for device and circuit level characterization of static and dynamic variations

2014 ◽  
Vol 53 (4S) ◽  
pp. 04EE08 ◽  
Author(s):  
A. K. M. Mahfuzul Islam ◽  
Hidetoshi Onodera
Keyword(s):  
Ring Oscillator ◽  
Dynamic Variations ◽  
Area Efficient

Design and Characterization of Area-Efficient Trench Termination for 4H-SiC Devices

2019 ◽  
Vol 7 (3) ◽  
pp. 1519-1526 ◽  
Author(s):  
Hengyu Wang ◽  
Jue Wang ◽  
Li Liu ◽  
Na Ren ◽  
Jiupeng Wu ◽  
...  
Keyword(s):  
Area Efficient

AC Hot-Carrier Effects Characterization by Circuit Modification Using Focused Ion Beam

1998 ◽  
Author(s):  
Yong-koo Yoo ◽  
Chong-ha Lee ◽  
Jung-hwan Lee
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ring Oscillator ◽  
Voltage Waveform ◽  
Hot Carrier ◽  
Before And After ◽  
Wafer Processing ◽  
Hot Carrier Effects ◽  
Stress Voltage

Abstract Focused Ion Beam (FIB) is used to modify a ring-oscillator circuit to enable the direct characterization of AC hot-carrier effects. Probe access to internal device nodes is necessary to find out the amount of individual device degradation resulting from AC hot-carrier stress. The circuit modification on an existing wafer by FIB enables the direct measurement of individual device in the circuit before and after AC hotcarrier stressing without resorting to new mask sets and silicon wafer processing for new hotcarrier reliability test circuits that can provide realistic stress voltage waveform. Small pads produced by FIB have small acceptable impact on the stress waveform of the circuit and they still allow accurate measurement of the internal device nodes. FIB’s ‘cut and paste’ technique is used to form these probe pads. Some suggestions are made for the proper FIB work in this paper. The results of AC hot-carrier tests with the circuit modified by FIB are also presented with some illustrative figures.

Fabrication of Thin-Film Transistors Using PECVD-Grown Carbon Nanotubes and Their Application to Integrated Circuits

2012 ◽  
Vol 1451 ◽  
pp. 159-168
Author(s):  
Takashi Mizutani ◽  
Shigeru Kishimoto
Keyword(s):  
Integrated Circuits ◽  
Scanning Probe Microscopy ◽  
High Speed ◽  
Chemical Vapor ◽  
Ring Oscillator ◽  
Scanning Probe ◽  
Preferential Growth ◽  
Current Voltage ◽  
Current Voltage Characteristics

ABSTRACTMedium scale integrated circuits with 108 CNT-TFTs have been fabricated using CNTs grown by plasma enhanced chemical vapor deposition (PECVD) which has the advantage of preferential growth of CNTs with semiconducting behavior in the FET current–voltage characteristics. High-speed operation with a switching time of 0.51 μs/gate, which is highest in the CNT-TFT integrated circuits to our knowledge, was demonstrated by a 53-stage ring oscillator. Characterization of CNT-TFTs using scanning probe microscopy has also been performed. The island-like structure in the electrical properties of the CNT network was observed even in a high-density CNT network in the subthreshold regime. This was explained by the decrease of the effective number of CNTs which contribute the electrical conduction.

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