A comparison of modeling approaches for current transport in polysilicon-channel nanowire and macaroni GAA MOSFETs

Abstract In this paper, we compare quantitatively the results obtained from the numerical simulation of current transport in polysilicon-channel MOSFETs under different modeling assumptions typically adopted to reproduce the basic physics of the devices, including the effective medium approximation and the description of polysilicon as the haphazard ensemble of monocrystalline silicon grains separated by highly defective grain boundaries. In the latter case, both pure drift-diffusion transport and a mix of intra-grain drift-diffusion and inter-grain thermionic emission are considered. Interest is focused on cylindrical nanowire and macaroni gate-all-around structures, due to their relevance in the field of 3-Dimensional NAND Flash memories, focusing not only on the average behavior but also on the variability in the electrical characteristics of the devices.

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Enhancement of electrical characteristics of the coupling ratio and the program/erase operation for NAND flash memories with an asymmetric interpoly-dielectric structure

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.064306 ◽

2014 ◽

Vol 53 (6) ◽

pp. 064306 ◽

Cited By ~ 1

Author(s):

Ju Tae Ryu ◽

Sung Hwan Jang ◽

Tae Whan Kim

Keyword(s):

Electrical Characteristics ◽

Nand Flash ◽

Dielectric Structure ◽

Coupling Ratio ◽

Flash Memories

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On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements

Applied Physics A ◽

10.1007/s00339-020-04086-0 ◽

2020 ◽

Vol 126 (12) ◽

Author(s):

Abbas Sabahi Namini ◽

Mehdi Shahedi Asl ◽

Gholamreza Pirgholi-Givi ◽

Seyed Ali Delbari ◽

Javid Farazin ◽

...

Keyword(s):

Series Resistance ◽

Thermionic Emission ◽

Reverse Current ◽

Current Transport ◽

Electrical Characteristics ◽

Transport Mechanisms ◽

Electrical Parameters ◽

Zero Bias ◽

Current Voltage ◽

Significant Increment

AbstractThe present study aims to investigate the effect of (PVP: Sn-TeO2) interfacial layer on the electrical parameters of the Al/p-Si diode. For this aim, (Sn-TeO2) nanostructures were developed by the ultrasound-assisted method, and both their electrical and optical characteristics were investigated by XRD, SEM, EDS, and UV–Vis methods. The bandgap of Sn-TeO2 was found as 4.65 eV from the (αhυ)2 vs (hυ) plot. The main electrical parameters of the Al/p-Si diodes with/ without (PVP: Sn-TeO2) interlayer, such as ideality factor (n), zero-bias barrier height (Φ0), and series resistance (Rs), were calculated by applying and comparing two methods of thermionic emission theory and Cheung’s functions. These results show that the presence of the (PVP: Sn-TeO2 interlayer, along with the increase of Φ0, and the decrease of n and Rs, led to a significant increment in the rectification of MPS when compared to MS diode. The current-transport mechanisms (CTMs) of them were examined through the forward LnIF − LnVF and reverse LnIR − VR0.5 bias currents, and then, the Poole–Frenkel and Schottky field-lowering coefficients (β) were calculated and obtained its value from the theoretical and experimental methods showed that the mechanism of the reverse current of MS and MPS diodes is governing by the Schottky emission and Pool-Frenkel mechanism, respectively.

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Random Telegraph Noise in 3D NAND Flash Memories

Micromachines ◽

10.3390/mi12060703 ◽

2021 ◽

Vol 12 (6) ◽

pp. 703

Author(s):

Alessandro S. Spinelli ◽

Gerardo Malavena ◽

Andrea L. Lacaita ◽

Christian Monzio Compagnoni

Keyword(s):

Working Conditions ◽

Simulation Models ◽

Integration Scheme ◽

Current Transport ◽

Nand Flash ◽

Flash Memories ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

Relevant Role ◽

The Impact

In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the polycrystalline nature of the string silicon channels on current transport. Starting from that, experimental data for RTN in 3D arrays are presented and explained via theoretical and simulation models. The attention is drawn, in particular, to the changes in the RTN dependences on the array working conditions that resulted from the transition from planar to 3D architectures. Such changes are explained by considering the impact of highly-defective grain boundaries on percolative current transport in cell channels in combination with the localized nature of the RTN traps.

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The Effects of Taper-Angle on the Electrical Characteristics of Vertical NAND Flash Memories

IEEE Electron Device Letters ◽

10.1109/led.2017.2747631 ◽

2017 ◽

Vol 38 (10) ◽

pp. 1375-1378 ◽

Cited By ~ 3

Author(s):

Kee Tae Kim ◽

Sung Woo An ◽

Hyun Soo Jung ◽

Keon-Ho Yoo ◽

Tae Whan Kim

Keyword(s):

Electrical Characteristics ◽

Nand Flash ◽

Flash Memories ◽

Taper Angle

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Temperature-Dependent Electrical Characteristics of Ag Schottky Contacts to Differently Grown O-Polar Bulk ZnO

Journal of Electronic Packaging ◽

10.1115/1.4023404 ◽

2013 ◽

Vol 135 (1) ◽

Cited By ~ 3

Author(s):

Hogyoung Kim ◽

Ahrum Sohn ◽

Yunae Cho ◽

Dong-Wook Kim

Keyword(s):

Electron Transport ◽

Electrical Properties ◽

Schottky Contact ◽

Thermionic Emission ◽

Schottky Contacts ◽

Current Transport ◽

Electrical Characteristics ◽

Temperature Dependent ◽

Barrier Heights ◽

Two Samples

The temperature-dependent electrical properties of Ag Schottky contacts to differently grown O-polar bulk ZnO single crystals were comparatively investigated in the temperature range of 100–300 K. Schottky contact to hydrothermal ZnO produced the higher barrier heights (lower ideality factors) than that of pressurized melt-grown ZnO. The modified Richardson plots for two samples produced the larger Richardson constant compared to the theoretical value of 32 A cm−2 K−2 for n-type ZnO, indicating that the inhomogeneous barrier height with the thermionic emission (TE) model could not explain the current transport. The conductive accumulation layers on the ZnO surfaces might not be removed effectively for two samples, which degraded the rectifying characteristics. The different electron transport characteristics between hydrothermal and pressurized melt-grown ZnO could be explained by the different degree of Ag-O formation at the interface.

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Time dependent threshold-voltage fluctuations in NAND flash memories: From basic physics to impact on array operation

2015 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2015.7409699 ◽

2015 ◽

Cited By ~ 10

Author(s):

Akira Goda ◽

Carmine Miccoli ◽

Christian Monzio Compagnoni

Keyword(s):

Threshold Voltage ◽

Time Dependent ◽

Nand Flash ◽

Flash Memories ◽

Voltage Fluctuations ◽

Basic Physics

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A Heavy-ion Beam Monitor Based on 3D NAND Flash Memories

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2021.3072298 ◽

2021 ◽

pp. 1-1

Author(s):

S. Gerardin ◽

M. Bagatin ◽

A. Paccagnella ◽

S. Beltrami ◽

A. Costantino ◽

...

Keyword(s):

Ion Beam ◽

Heavy Ion ◽

Nand Flash ◽

Flash Memories ◽

Beam Monitor ◽

Heavy Ion Beam

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Current Transport in Ti/Al/Ni/Au Ohmic Contacts to GaN and AlGaN

Materials Science Forum ◽

10.4028/www.scientific.net/msf.556-557.1027 ◽

2007 ◽

Vol 556-557 ◽

pp. 1027-1030 ◽

Cited By ~ 2

Author(s):

Ferdinando Iucolano ◽

Fabrizio Roccaforte ◽

Filippo Giannazzo ◽

A. Alberti ◽

Vito Raineri

Keyword(s):

Contact Resistance ◽

Field Emission ◽

Ohmic Contacts ◽

Theoretical Models ◽

Specific Contact Resistance ◽

Strong Increase ◽

Current Transport ◽

Electrical Characteristics ◽

Structural And Electrical Properties ◽

Specific Contact

In this work, the structural and electrical properties of Ti/Al/Ni/Au contacts on n-type Gallium Nitride were studied. An ohmic behaviour was observed after annealing above 700°C. The structural analysis showed the formation of an interfacial TiN layer and different phases in the reacted layer (AlNi, AlAu4, Al2Au) upon annealing. The temperature dependence of the specific contact resistance demonstrated that the current transport occurs through thermoionic field emission in the contacts annealed at 600°C, and field emission after annealing at higher temperatures. By fitting the data with theoretical models, a reduction of the Schottky barrier from 1.21eV after annealing at 600°C to 0.81eV at 800°C was demonstrated, together with a strong increase of the carrier concentration at the interface. The reduction of the contact resistance upon annealing was discussed by correlating the structural and electrical characteristics of the contacts.

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