Mobility Degradation Induced by Substrate-Hot-Electron Generated Interface Traps at Different Stress Voltages and Temperatures

1993 ◽  
Author(s):  
C. C.-H. Hsu ◽  
C.-J. Lin
Keyword(s):  
Interface Traps ◽  
Hot Electron ◽  
Mobility Degradation

Mobility degradation due to interface traps in plasma oxynitride PMOS devices

2008 ◽  
Author(s):  
Ahmad Ehteshamul Islam ◽  
Vrajesh D. Maheta ◽  
Hitesh Das ◽  
Souvik Mahapatra ◽  
Muhammad Ashraful Alam
Keyword(s):  
Interface Traps ◽  
Mobility Degradation

Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets

2013 ◽  
Vol 740-742 ◽  
pp. 533-536 ◽  
Author(s):  
Viktoryia Uhnevionak ◽  
Christian Strenger ◽  
Alex Burenkov ◽  
Vincent Mortet ◽  
Elena Bedel-Pereira ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Fixed Charge ◽  
Interface Traps ◽  
Electrical Characteristics ◽  
Electrical Measurements ◽  
Mobility Degradation ◽  
Current Voltage ◽  
Degradation Models ◽  
Electrical Data

4H-SiC n-channel lateral MOSFETs were manufactured and characterized electrically by current-voltage measurements and by numerical simulation. To describe the observed electrical characteristics of the SiC MOSFETs, Near-Interface Traps (NIT) and mobility degradation models were included in the simulation. The main finding of the simulation is that two models for the NIT states in the upper part of the SiC bandgap are able to describe the electrical data equally well. In one of them, acceptor-like traps and fixed charge are considered while in a newly developed one, donor-like traps are taken into account also.

Suppression of Nitridation-Induced Interface Traps and Hole Mobility Degradation by Nitrogen Plasma Nitridation

2002 ◽  
Vol 5 (4) ◽  
pp. G26 ◽  
Author(s):  
C. H. Ang ◽  
S. S. Tan ◽  
C. M. Lek ◽  
W. Lin ◽  
Z. J. Zheng ◽  
...  
Keyword(s):  
Hole Mobility ◽  
Nitrogen Plasma ◽  
Interface Traps ◽  
Plasma Nitridation ◽  
Mobility Degradation

Time-dependent evolution of interface traps in hot-electron damaged metal/SiO2/Si capacitors

1987 ◽  
Vol 8 (12) ◽  
pp. 566-568 ◽  
Author(s):  
Y. Nishioka ◽  
E.F. Da Silva ◽  
Tso-Ping Ma
Keyword(s):  
Time Dependent ◽  
Interface Traps ◽  
Hot Electron
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