Suppression of Nitridation-Induced Interface Traps and Hole Mobility Degradation by Nitrogen Plasma Nitridation

2002 ◽  
Vol 5 (4) ◽  
pp. G26 ◽  
Author(s):  
C. H. Ang ◽  
S. S. Tan ◽  
C. M. Lek ◽  
W. Lin ◽  
Z. J. Zheng ◽  
...  
Keyword(s):  
Hole Mobility ◽  
Nitrogen Plasma ◽  
Interface Traps ◽  
Plasma Nitridation ◽  
Mobility Degradation

Mobility degradation due to interface traps in plasma oxynitride PMOS devices

2008 ◽  
Author(s):  
Ahmad Ehteshamul Islam ◽  
Vrajesh D. Maheta ◽  
Hitesh Das ◽  
Souvik Mahapatra ◽  
Muhammad Ashraful Alam
Keyword(s):  
Interface Traps ◽  
Mobility Degradation

Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets

2013 ◽  
Vol 740-742 ◽  
pp. 533-536 ◽  
Author(s):  
Viktoryia Uhnevionak ◽  
Christian Strenger ◽  
Alex Burenkov ◽  
Vincent Mortet ◽  
Elena Bedel-Pereira ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Fixed Charge ◽  
Interface Traps ◽  
Electrical Characteristics ◽  
Electrical Measurements ◽  
Mobility Degradation ◽  
Current Voltage ◽  
Degradation Models ◽  
Electrical Data

4H-SiC n-channel lateral MOSFETs were manufactured and characterized electrically by current-voltage measurements and by numerical simulation. To describe the observed electrical characteristics of the SiC MOSFETs, Near-Interface Traps (NIT) and mobility degradation models were included in the simulation. The main finding of the simulation is that two models for the NIT states in the upper part of the SiC bandgap are able to describe the electrical data equally well. In one of them, acceptor-like traps and fixed charge are considered while in a newly developed one, donor-like traps are taken into account also.

Quantifying hole mobility degradation in pMOSFETs with a strained-Si0.7Ge0.3 surface-channel under an ALD TiN/Al2O3/HfAlOx/Al2O3 gate stack

2004 ◽  
Vol 48 (5) ◽  
pp. 721-729 ◽  
Author(s):  
S. Persson ◽  
D. Wu ◽  
P.-E. Hellström ◽  
S.-L. Zhang ◽  
M. Östling
Keyword(s):  
Hole Mobility ◽  
Gate Stack ◽  
Mobility Degradation

Effects of Nitrogen Reactive Species on Germanium Plasma Nitridation Processes

2006 ◽  
Vol 917 ◽  
Author(s):  
Takuya Sugawara ◽  
Raghavasimhan Sreenivasan ◽  
Paul C. McIntyre
Keyword(s):  
Substrate Temperature ◽  
Nitrogen Concentration ◽  
Plasma Chemistry ◽  
Nitrogen Plasma ◽  
Reactive Species ◽  
Silicon Substrates ◽  
Plasma Nitridation ◽  
Nitridation Process ◽  
Germanium Substrate ◽  
Nitrogen Reactive Species

AbstractRoles of reactive species of germanium and silicon plasma nitridation were investigated by comparing nitrogen plasma chemistry and oxynitride layer physical properties. In high pressure remote plasma nitridation process, hydrogen containing neutral radicals (NH* and H*) were important to nitride germanium and silicon substrates. This process required high substrate temperature to nitride germanium substrate, whereas silicon substrates could be nitrided at low substrate temperature. In low pressure RLSA plasma nitridation process, N2+ ion species acted as dominant reactive species. Using this process, germanium could be nitrided at low substrate temperature without hydrogen and high nitrogen concentration (~22at.%) GeON was obtained.

Sign in / Sign up

Export Citation Format

Share Document