Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets

2013 ◽  
Vol 740-742 ◽  
pp. 533-536 ◽  
Author(s):  
Viktoryia Uhnevionak ◽  
Christian Strenger ◽  
Alex Burenkov ◽  
Vincent Mortet ◽  
Elena Bedel-Pereira ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Fixed Charge ◽  
Interface Traps ◽  
Electrical Characteristics ◽  
Electrical Measurements ◽  
Mobility Degradation ◽  
Current Voltage ◽  
Degradation Models ◽  
Electrical Data

4H-SiC n-channel lateral MOSFETs were manufactured and characterized electrically by current-voltage measurements and by numerical simulation. To describe the observed electrical characteristics of the SiC MOSFETs, Near-Interface Traps (NIT) and mobility degradation models were included in the simulation. The main finding of the simulation is that two models for the NIT states in the upper part of the SiC bandgap are able to describe the electrical data equally well. In one of them, acceptor-like traps and fixed charge are considered while in a newly developed one, donor-like traps are taken into account also.

scholarly journals Investigation and Numerical Simulation of a High-Current AC Circuit Breaker

2019 ◽  
Vol 6 (3) ◽  
pp. 235-238
Author(s):  
I. Murashov ◽  
V. Frolov ◽  
A. Kvashnin ◽  
J. Valenta ◽  
D. Simek ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Mathematical Model ◽  
High Speed ◽  
Circuit Breaker ◽  
Moving Mesh ◽  
Electrical Characteristics ◽  
High Current ◽  
Spectral Diagnostics ◽  
Current Voltage ◽  
Time Calculation

The article is devoted to the study of the high-current AC circuit breaker. The results of the study are presented for various configurations of the arc divider. The study includes methods of spectral diagnostics and high-speed camera shooting synchronized with the electrical characteristics of the circuit breaker (current, voltage) in time. The obtained results allow to determine the composition of the plasma and dynamics of changes in the composition of the discharge in time. Calculation of the plasma composition and properties is made according to the obtained data, which makes it possible to take into account the products of circuit breaker materials ablation in numerical simulation. Non-stationary two-dimensional mathematical model with a moving mesh is developed. The obtained results allow to correct and verify the developed mathematical model of the circuit breaker operation. The evaluation of the arc divider influence is presented in the article.

scholarly journals Modeling of the Channel Thickness Influence on Electrical Characteristics and Series Resistance in Gate-Recessed Nanoscale SOI MOSFETs

2013 ◽  
Vol 2013 ◽  
pp. 1-10 ◽  
Author(s):  
A. Karsenty ◽  
A. Chelly
Keyword(s):  
Room Temperature ◽  
Series Resistance ◽  
Electrical Characteristics ◽  
Saturation Current ◽  
Mobility Degradation ◽  
Current Voltage ◽  
Voltage Dependent ◽  
Channel Thickness ◽  
Current Voltage Characteristics ◽  
First Time

Ultrathin body (UTB) and nanoscale body (NSB) SOI-MOSFET devices, sharing a similar W/L but with a channel thickness of 46 nm and lower than 5 nm, respectively, were fabricated using a selective “gate-recessed” process on the same silicon wafer. Their current-voltage characteristics measured at room temperature were found to be surprisingly different by several orders of magnitude. We analyzed this result by considering the severe mobility degradation and the influence of a huge series resistance and found that the last one seems more coherent. Then the electrical characteristics of the NSB can be analytically derived by integrating a gate voltage-dependent drain source series resistance. In this paper, the influence of the channel thickness on the series resistance is reported for the first time. This influence is integrated to the analytical model in order to describe the trends of the saturation current with the channel thickness. This modeling approach may be useful to interpret anomalous electrical behavior of other nanodevices in which series resistance and/or mobility degradation is of a great concern.

Silicon Surface Chemical Treatments in Oxide/Nitride Dielectric Stack Properties

2002 ◽  
Vol 716 ◽  
Author(s):  
D. Jacques ◽  
S. Petitdidier ◽  
J.L. Regolini ◽  
K. Barla
Keyword(s):  
Oxygen Content ◽  
Oxide Thickness ◽  
Morphological Data ◽  
Electrical Characteristics ◽  
Electrical Measurements ◽  
Chemical Cleaning ◽  
Force Microscopy ◽  
Chemical Treatments ◽  
Atomic Force ◽  
Interfacial Oxygen

AbstractOxide/Nitride dielectric stack is widely used as the standard dielectric for DRAM capacitors. The influence of the chemical cleaning prior to the stack formation has been studied in this work. As a result, morphological data such as stack surface roughness (Atomic Force Microscopy) and silicon nitride (SiN) incubation time for growth are comparable for all the studied cases on <Si>. However, Tof-SIMS exhibits different oxygen content at the Si/stack interface following the different chemical treatments. Electrical measurements show comparable C-V and I-V results, for the same Equivalent Oxide Thickness (same capacitance at strong accumulation i.e.-3V) while the different studied interfaces bring different interface states density with lower values for higher interfacial oxygen content. For DRAM applications, a clear improvement in electrical characteristics is obtained under low interfacial oxygen content conditions. Results are compared in embedded-DRAM cells for which we developed an industrially compatible dielectric deposition sequence to obtain minimum leakage current with maximum specific capacitance and no particular linking constraints.

Nanoprobing Applications with Capacitance-Voltage and Pulsed Current-Voltage Measurements for Device Failure Analysis

2015 ◽  
Author(s):  
LiLung Lai ◽  
Nan Li ◽  
Qi Zhang ◽  
Tim Bao ◽  
Robert Newton
Keyword(s):  
Failure Analysis ◽  
High Speed ◽  
Pulsed Current ◽  
Electrical Measurements ◽  
Device Failure ◽  
Mos Devices ◽  
Atomic Force ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Rising Time

Abstract Owing to the advancing progress of electrical measurements using SEM (Scanning Electron Microscope) or AFM (Atomic Force Microscope) based nanoprober systems on nanoscale devices in the modern semiconductor laboratory, we already have the capability to apply DC sweep for quasi-static I-V (Current-Voltage), high speed pulsing waveform for the dynamic I-V, and AC imposed for C-V (Capacitance-Voltage) analysis to the MOS devices. The available frequency is up to 100MHz at the current techniques. The specification of pulsed falling/rising time is around 10-1ns and the measurable capacitance can be available down to 50aF, for the nano-dimension down to 14nm. The mechanisms of dynamic applications are somewhat deeper than quasi-static current-voltage analysis. Regarding the operation, it is complicated for pulsing function but much easy for C-V. The effective FA (Failure Analysis) applications include the detection of resistive gate and analysis for abnormal channel doping issue.

Preparation and Electrical Characteristics of (100), (111), and Randomly Oriented PZT Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Chang Jung Kim ◽  
Dae Sung Yoon ◽  
Joon Sung Lee ◽  
Chaun Gi Choi ◽  
Won Jong Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Test System ◽  
Electrical Characteristics ◽  
Pzt Thin Films ◽  
Pole Figures ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Drying Conditions

ABSTRACTThe (100), (111) and randomly oriented PZT thin films were fabricated on Pt/Ti/Coming 7059 glass using sol-gel method. The thin films having different orientation were fabricated by different drying conditions for pyrolysis. The preferred orientations of the PZT thin films were observed using XRD, rocking curves, and pole figures. The microstructures were investigated using SEM. The hysteresis loops and capacitance-voltage characteristics of the films were investigated using a standardized ferroelectric test system. The dielectric constant and current-voltage characteristics of the films were investigated using an impedance analyzer and pA meter, respectively. The films oriented in a particular direction showed superior electrical characteristics to the randomly oriented films.

Conductive AFM: Probing Nano-scale Electrical Properties of Model Cell Membranes

2012 ◽  
Vol 1465 ◽  
Author(s):  
Paul Farrar ◽  
Del Atkinson ◽  
Andrew J. Gallant
Keyword(s):  
Lipid Bilayers ◽  
Electrical Contact ◽  
Pyrolytic Graphite ◽  
Elastic Response ◽  
Electrical Measurements ◽  
Contact Mode ◽  
Biologically Relevant ◽  
Atomic Force ◽  
Current Voltage ◽  
Model Cell

ABSTRACTBiologically relevant lipid bilayers supported on highly ordered pyrolytic graphite (HOPG) were probed both mechanically and electrically with a Conductive Atomic Force Microscope (C-AFM) capable of measuring ultra-low currents. Results show that these membranes undergo an elastic response up to 26 nN on average when compressed with an AFM tip. Measuring the films with a low contact force demonstrates that contact mode AFM can be used repeatedly to image without damaging the film. Based on current-voltage measurements made with the C-AFM, it is shown that apparently high resistances seen for the films could be the result of variable electrical contact between the tip and surface. As a result, the paper proposes that the deflection of the cantilever should always be measured in order to ensure knowledge of the location of the tip during all electrical measurements.

Measurement of parameters of the superconducting non-insulated coils

2021 ◽  
pp. 41-46
Author(s):  
Evgeniy P. Krasnoperov ◽  
Valentin V. Guryev ◽  
Vasyli V. Sychugov ◽  
Dmitri S. Yashkin ◽  
Sergei V. Shavkin
Keyword(s):  
Normal State ◽  
Superconducting State ◽  
Critical Value ◽  
Magnetic Characteristics ◽  
Electrical Characteristics ◽  
Linear Current ◽  
Superconducting Coils ◽  
Current Voltage ◽  
Current Input

The electrical characteristics of superconducting coils with non-insulated windings are studied. The procedures for measuring the parameters of uninsulated superconducting windings are described. In particular, the inductance is measured by voltage with a linear current input at a given rate. Attention is focused on the impossibility of correctly determining the inductance in a winding with an uninsulated superconductor in a normal state. It is noted that in a superconducting state at currents below the critical value, the inductance of the winding is comparable to the inductance with an insulated wire. The results of measurements of inductance, radial resistance, static current-voltage and magnetic characteristics of two tape coils with non-insulated superconducting windings, one of which had a soldered connection, are presented. Conditions for measuring the parameters of non-insulated superconducting windings are formulated when they are compared with insulated windings.

Temperature Sensors Based on AlN/4H-SiC Diodes

2021 ◽  
Vol 13 (7) ◽  
pp. 1318-1323
Author(s):  
Myeong-Cheol Shin ◽  
Dong-Hyeon Kim ◽  
Seong-Woo Jung ◽  
Michael A. Schweitz ◽  
Sang-Mo Koo
Keyword(s):  
Annealing Temperature ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Temperature Sensors ◽  
Electrical Characteristics ◽  
Voltage Range ◽  
Radio Frequency Sputtering ◽  
Sensing Applications ◽  
Current Voltage ◽  
Dc Bias

ABSTRACTThis study report on the formation of AlN/SiC heterostructure Schottky diodes for use of temperature sensing applications enhance the sensitivity. We analyzed the sensitivity of the AlN/SiC Schottky diode sensor depending on the annealing temperature. AlN/4H-SiC Schottky diodes were fabricated by depositing aluminum nitride (AlN) thin film on 4H/SiC by radio frequency sputtering. The forward bias electrical characteristics were determined under DC bias (in the voltage range of 0–1.5 V). The ideality factor, barrier height, and sensitivity were derived through current–voltage–temperature (I–V–T) measurements in the temperature range of 300–500 K. The sensitivity of the AlN/4H-SiC Schottky barrier diode ranged from 2.5–5.0 mV/K.

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