Embedded Nanowire Network Growth and Node Device Fabrication for GaAs-Based High-Density Hexagonal BDD Quantum Circuits

One-dimensional nanowire quantum devices and basic quantum logic AND and OR unit on hexagonal nanowire units controlled by wrap gate (WPG) were designed and fabricated on GaAs-based one-dimensional electron gas (1-DEG) regular nanowire network with hexagonal topology. These basic quantum logic units worked correctly at 35 K, and clear quantum conductance was achieved on the node device, logic AND circuit unit, and logic OR circuit unit. Binary-decision-diagram- (BDD-) based arithmetic logic unit (ALU) is realized on GaAs-based regular nanowire network with hexagonal topology by the same fabrication method as that of the quantum devices and basic circuits. This BDD-based ALU circuit worked correctly at room temperature. Since these quantum devices and circuits are basic units of the BDD ALU combinational circuit, the possibility of integrating these quantum devices and basic quantum circuits into the BDD-based quantum circuit with more complicated structures was discussed. We are prospecting the realization of quantum BDD combinational circuitries with very small of energy consumption and very high density of integration.

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Lithium‐Metal Anodes: A Lightweight 3D Cu Nanowire Network with Phosphidation Gradient as Current Collector for High‐Density Nucleation and Stable Deposition of Lithium (Adv. Mater. 48/2019)

Advanced Materials ◽

10.1002/adma.201970336 ◽

2019 ◽

Vol 31 (48) ◽

pp. 1970336 ◽

Cited By ~ 1

Author(s):

Chen Zhang ◽

Ruiyang Lyu ◽

Wei Lv ◽

Huan Li ◽

Wei Jiang ◽

...

Keyword(s):

Current Collector ◽

High Density ◽

Lithium Metal ◽

Nanowire Network ◽

Lithium Metal Anodes ◽

Metal Anodes

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Indium phosphide nanowire network: growth and characterization for thermoelectric conversion

10.1117/12.929861 ◽

2012 ◽

Cited By ~ 3

Author(s):

Kate J. Norris ◽

Junce Zhang ◽

David M. Fryauf ◽

Alison Rugar ◽

Amanda Flores ◽

...

Keyword(s):

Indium Phosphide ◽

Network Growth ◽

Thermoelectric Conversion ◽

Nanowire Network

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Resist trimming in high-density CF[sub 4]/O[sub 2] plasmas for sub-0.1 μm device fabrication

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1503791 ◽

2002 ◽

Vol 20 (5) ◽

pp. 1974 ◽

Cited By ~ 18

Author(s):

Chian-Yuh Sin ◽

Bing-Hung Chen ◽

W. L. Loh ◽

J. Yu ◽

P. Yelehanka ◽

...

Keyword(s):

Device Fabrication ◽

High Density

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Planar defects in ordered (Ga,In)P

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100106570 ◽

1988 ◽

Vol 46 ◽

pp. 902-903

Author(s):

S. McKernan ◽

C. B. Carter ◽

D. Bour ◽

J. R. Shealy

Keyword(s):

Electron Diffraction ◽

Vapor Phase ◽

Growth Direction ◽

High Density ◽

Ordered Structure ◽

Planar Defects ◽

Diffraction Patterns ◽

Ternary Semiconductors ◽

Anion Species ◽

Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

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Quantitative defect studies in semiconductor TEM samples prepared by low angle ion milling

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138932 ◽

1995 ◽

Vol 53 ◽

pp. 512-513

Author(s):

L. Mulestagno ◽

J.C. Holzer ◽

P. Fraundorf

Keyword(s):

Sample Preparation ◽

Milling Time ◽

High Density ◽

Low Density ◽

Ion Milling ◽

High Quality ◽

Variable Angle ◽

Major Disadvantage ◽

Induced Defects

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).

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Structural changes in silicon-on-insulator material during post-implantation annealing

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100145054 ◽

1986 ◽

Vol 44 ◽

pp. 736-737

Author(s):

C. O. Jung ◽

S. J. Krause ◽

S.R. Wilson

Keyword(s):

Integrated Circuits ◽

Oxide Layer ◽

High Speed ◽

Structural Changes ◽

Device Fabrication ◽

Silicon On Insulator ◽

High Quality ◽

Radiation Hardened ◽

Post Implantation ◽

Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

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Using the scanning electron microscope for failure analysis of high density magnetic media

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126755 ◽

1987 ◽

Vol 45 ◽

pp. 392-393

Author(s):

Evelyn R. Ackerman ◽

Gary D. Burnett

Keyword(s):

Electron Microscope ◽

Scanning Electron Microscope ◽

Failure Analysis ◽

High Density ◽

Magnetic Media ◽

Specific Data ◽

Retrieval Systems ◽

Operating Environments ◽

The Media ◽

Scanning Electron

Advancements in state of the art high density Head/Disk retrieval systems has increased the demand for sophisticated failure analysis methods. From 1968 to 1974 the emphasis was on the number of tracks per inch. (TPI) ranging from 100 to 400 as summarized in Table 1. This emphasis shifted with the increase in densities to include the number of bits per inch (BPI). A bit is formed by magnetizing the Fe203 particles of the media in one direction and allowing magnetic heads to recognize specific data patterns. From 1977 to 1986 the tracks per inch increased from 470 to 1400 corresponding to an increase from 6300 to 10,800 bits per inch respectively. Due to the reduction in the bit and track sizes, build and operating environments of systems have become critical factors in media reliability.Using the Ferrofluid pattern developing technique, the scanning electron microscope can be a valuable diagnostic tool in the examination of failure sites on disks.

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