Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory
2011 ◽
Vol 29
(1)
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pp. 01AD03
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2017 ◽
Vol 57
(1)
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pp. 011501
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2016 ◽
Vol 37
(4)
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pp. 408-411
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2016 ◽
Vol 24
(04)
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pp. 1750048
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2019 ◽
Vol 19
(12)
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pp. 8045-8051
2019 ◽
Vol 66
(3)
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pp. 1276-1280
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Keyword(s):
2011 ◽
Vol 14
(2)
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pp. H103
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