Average SWCNT bundle length estimated by resistance measurement

The length of single-walled carbon nanotubes (SWCNTs) affects the optoelectronic and mechanical properties of macroscopic SWCNT layers. Modern methods are capable to measure the length of short nanotubes, and also require complex sample preparation procedures. In this work we show that the average length of SWCNTs can be estimated by measuring the resistance of randomly oriented SWCNTs array. We observe the change in the slope of the resistance dependence on the distance between the contacts with the interval between 100 and 200 μm. The change of resistance slope indicates a change in the path of current flow through the SWCNT. The change in the conduction path can be associated with the “effective bundle length”, which should be related to the average nanotube length. Thus, we have demonstrated a simple and quick technique to measure SWCNT bundle length, which can be used in-situ and does not require special sample preparation.

CNT as Interconnects

The chapter will start with brief introduction to the interconnects and its importance in an integrated circuit at deep sub-micron technology nodes. The brief discussion about the concept of scaling, interconnects models, and material in use are presented. The limitations of conventional materials at scaled down technology nodes will be discussed next. The focus of the chapter is to present the electrical equivalent circuit model to estimate the impedance parameters of SWCNT bundle and MWCNT bundle as interconnects at different nano-scaled technology nodes for global level interconnect length. Using ESC model of SWCNT, MWCNT, and copper, the performance comparative analysis for delay and power delay product (PDP) will be presented for different interconnect lengths at nano-scaled technology nodes. Finally, the chapter summary and conclusion will be written at the end of the chapter.