Improved device performance of recessed-gate AlGaN/GaN HEMTs using by in-situ N2O radical treatment

2022 ◽  
Author(s):  
Xinchuang Zhang ◽  
Mei Wu ◽  
Bin Hou ◽  
Xuerui Niu ◽  
Hao Lu ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
High Electron Mobility Transistors ◽  
Device Performance ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Transmission Electron ◽  
Order Of Magnitude ◽  
Recessed Gate ◽  
Gate Recess

Abstract In this work, the N2O radicals in-situ treatment on gate region has been employed to improve device performance of recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs). The samples after gate recess etching were treated by N2O radicals without physical bombardment. After in-situ treatment (IST) processing, the gate leakage currents decreased by more than one order of magnitude compared to the sample without IST. The fabricated HEMTs with the IST process show a low reverse gate current of 10-9 A/mm, high on/off current ratio of 108, and high fT×Lg of 13.44 GHz·μm. A transmission electron microscope (TEM) imaging illustrates an oxide layer with a thickness of 1.8 nm exists at the AlGaN surface. X-ray photoelectron spectroscopy (XPS) measurement shows that the content of the Al-O and Ga-O bonds elevated after IST, indicating that the Al-N and Ga-N bonds on the AlGaN surface were broken and meanwhile the Al-O and Ga-O bonds formed. The oxide formed by a chemical reaction between radicals and the surface of the AlGaN barrier layer is responsible for improved device characteristics.

scholarly journals Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

Materials ◽  
2020 ◽  
Vol 13 (7) ◽  
pp. 1538 ◽  
Author(s):  
Hyun-Seop Kim ◽  
Myoung-Jin Kang ◽  
Jeong Jin Kim ◽  
Kwang-Seok Seo ◽  
Ho-Young Cha
Keyword(s):  
High Electron Mobility Transistors ◽  
Gate Insulator ◽  
High Electron ◽  
Aluminum Oxynitride ◽  
Characterization Methods ◽  
Field Plate ◽  
Electron Mobility Transistors ◽  
Gate Structure ◽  
Recessed Gate ◽  
Gate Recess

This study investigated the effects of a thin aluminum oxynitride (AlOxNy) gate insulator on the electrical characteristics of AlGaN/GaN-on-SiC metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). The fabricated AlGaN/GaN-on-SiC MIS-HEMTs exhibited a significant reduction in gate leakage and off-state drain currents in comparison with the conventional Schottky-gate HEMTs, thus enhancing the breakdown voltage. The effects of gate recess were also investigated while using recessed MIS-HEMT configuration. The Johnson’s figures of merit (= fT × BVgd) for the fabricated MIS-HEMTs were found to be in the range of 5.57 to 10.76 THz·V, which is the state-of-the-art values for GaN-based HEMTs without a field plate. Various characterization methods were used to investigate the quality of the MIS and the recessed MIS interface.

Growth of Crack-Free GaN on Si HEMTs with Fe-Doped GaN Using Un-Doped GaN Interlayer

2016 ◽  
Vol 858 ◽  
pp. 1194-1197
Author(s):  
Atsushi Era ◽  
Susumu Hatakenaka ◽  
Hiroyuki Okazaki ◽  
Yoshitaka Kamo ◽  
Takehiro Nishida ◽  
...  
Keyword(s):  
High Electron Mobility Transistors ◽  
Threading Dislocations ◽  
High Electron ◽  
Fe Doping ◽  
Electron Mobility Transistors ◽  
Transmission Electron ◽  
Microscope Images ◽  
Gan On Si ◽  
Reflectance Measurements

We show the influence of Fe-doping upon bowing and cracking in GaN-on-Si based high-electron-mobility transistors (HEMTs) and report how to prevent from bowing and cracking. In-situ reflectance measurements revealed that stress relaxation occurred during the growth of GaN:Fe on Al0.25Ga0.75N, resulting in the wafer bowing and cracking. In-situ measurements and transmission electron microscope images showed that the relaxation was caused by the 3D growth of GaN:Fe and the propagation of threading dislocations. To suppress the relaxation, a 100 nm-thick un-doped GaN interlayer was inserted between GaN:Fe and Al0.25Ga0.75N. As a result, a crack-free low-bow surface was obtained for GaN-on-Si HEMTs with GaN:Fe.

Impacts of Gate Recess and Passivation on AlGaN/GaN High Electron Mobility Transistors

2007 ◽  
Vol 46 (2) ◽  
pp. 478-484 ◽  
Author(s):  
Chih-Yuan Chan ◽  
Ting-Chi Lee ◽  
Shawn S. H. Hsu ◽  
Leaf Chen ◽  
Yu-Syuan Lin
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gate Recess

The Use of Low Temperature AlInAs and GalnAs Lattice Matched to InP in the Fabrication of HBTs and HEMTs

1991 ◽  
Vol 241 ◽  
Author(s):  
R. A. Metzger ◽  
A. S. Brown ◽  
R. G. Wilson ◽  
T. Liu ◽  
W. E. Stanchina ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Normal Growth ◽  
High Electron Mobility Transistors ◽  
Bipolar Transistors ◽  
Device Performance ◽  
High Electron ◽  
High Electron Mobility ◽  
Temperature Range ◽  
Electron Mobility Transistors ◽  
Lattice Matched

ABSTRACTAlInAs and GaInAs lattice matched to InP and grown by MBE over a temperature range of 200 to 350°C (normal growth temperature of 500°C) has been used to enhance the device performance of inverted (where the donor layer lies below the channel) High Electron Mobility Transistors (HEMTs) and Heterojunction Bipolar Transistors (HBTs), respectively. We will show that an AlInAs spacer grown over a temperature range of 300 to 350°C and inserted between the AlInAs donor layer and GaInAs channel significantly reduces Si movement from the donor layer into the channel. This produces an inverted HEMT with a channel charge of 3.0×1012 cm−2 and mobility of 9131 cm2/V-s, as compared to the same HEMT with a spacer grown at 500 °C resulting in a channel charge of 2.3×1012 cm−2 and mobility of 4655 cm2/V-s. We will also show that a GaInAs spacer grown over a temperature range of 300 to 350°C and inserted between the AlInAs emitter and GalnAs base of an npn HBT significantly reduces Be movement from the base into the emitter, thereby allowing higher Be base dopings (up to 1×1020 cm−3) confined to 500 Å base widths, resulting in an AlInAs/GaInAs HBT with an fmax of 73 GHz and ft of 110 GHz.

Dual Gate-Recess Structure of Metamorphic High-Electron-Mobility Transistors for Enhancing f[sub max]

2008 ◽  
Vol 155 (12) ◽  
pp. H987 ◽  
Author(s):  
Jung-Hun Oh ◽  
Min Han ◽  
Sung-Woon Moon ◽  
Seokhun Lee ◽  
In-Seok Hwang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Dual Gate ◽  
Gate Recess
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