RELIEF RECORDING SILVER AT DIRECT LASER EXPOSURE ON THE LAYER OF AMORPHOUS SILICON
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Results of direct laser recording on a two-component medium consisting of deposited layers of amorphous silicon and silver on a glass substrate by magnetron sputtering are presented. A single-mode semiconductor laser with λ = 405 nm for amorphous silicon film on glass substrate with a power of 120 mW is used for direct laser recording on amorphous silicon. Formation of the relief on the silver film with direct recording pulses of a semiconductor laser with λ = 405 nm at the a-Si layer is taken on the electron microscope TESCAN VEGA 3 LMH.
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1987 ◽
Vol 26
(S4)
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pp. 47
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2019 ◽
Vol 112
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pp. 363-367
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1992 ◽
Vol 60-61
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pp. 29-38
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2006 ◽
Vol 45
(10A)
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pp. 7675-7676
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