Effect of hydrogen dilution on the silicon cluster volume fraction of a hydrogenated amorphous silicon film prepared using plasma-enhanced chemical vapor deposition

2020 ◽  
Vol 20 (1) ◽  
pp. 191-195 ◽  
Author(s):  
Yeonwon Kim ◽  
Kazunori Koga ◽  
Masaharu Shiratani
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Volume Fraction ◽  
Silicon Film ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Cluster ◽  
Amorphous Silicon Film ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

Light-Induced Effects on Fluorinated Amorphous and Microcrystalline Silicon Films

1996 ◽  
Vol 420 ◽  
Author(s):  
Hong-Seok Choi ◽  
Keun-Ho Jang ◽  
Jhun-Suk Yoo ◽  
Min-Koo Han
Keyword(s):  
Band Gap ◽  
Vapor Deposition ◽  
Optical Band Gap ◽  
Silicon Film ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
Microcrystalline Silicon ◽  
Amorphous Silicon Film ◽  
Hydrogenated Amorphous

AbstractThe fluorinated amorphous and microcrystalline silicon (a,μc-Si:H;F) films have been prepared by rf plasma enhanced chemical vapor deposition (PECVD) with SiH 4 and SiF 4 gas mixtures. The stretching Si-O (1085 cm-1) and SiH2 (2100 cm-1) bands estimated from infrared (IR) spectroscope data have related to the evolution of crystallinity and the optical band gap was shifted by introducing Si-O bonds. The sub-band gap absorption coefficient in a,μc-Si:H;F films was about one order lower than that in hydrogenated amorphous silicon film (a-Si:H). The subband gap absorption in a-Si:H;F film was comparable to that in tic-Si:H;F films. The lightinduced degradation of a,μc-Si:H;F films were also suppressed.

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