Controllable Vapor Growth of CsPbBr3/CdS 1D Heterostructures with Type-II Band Alignment for High-Performance Self-Powered Photodetector

CrystEngComm ◽  
2021 ◽  
Author(s):  
chao fan ◽  
Ke Yang ◽  
Xing Xu ◽  
Zhuodong Qi ◽  
Sha Jiang ◽  
...  
Keyword(s):  
High Performance ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Semiconductor Heterostructures ◽  
Type Ii ◽  
High Quality ◽  
Vapor Growth ◽  
Controllable Growth ◽  
Self Powered

The controllable growth of semiconductor heterostructures with suitable band alignment and morphology is crucial to construct high-performance optoelectronic devices, which is limited to the traditional semiconductor families. Here, high-quality CsPbBr3/CdS...

scholarly journals High performance self-powered photodetector based on 1D Te-2D WS2 mixed-dimensional heterostructure

2021 ◽  
Author(s):  
Lixiang Han ◽  
Mengmeng Yang ◽  
Peiting Wen ◽  
Wei Gao ◽  
nengjie huo ◽  
...  
Keyword(s):  
High Performance ◽  
Van Der Waals ◽  
Sharp Interface ◽  
Two Dimensional ◽  
High Quality ◽  
One Dimensional ◽  
Self Powered

One dimensional (1D)-two dimensional (2D) van der Waals (vdWs) mixed-dimensional heterostructures with advantages of atomically sharp interface, high quality and good compatibility have attracted tremendous attention in recent years. The...

scholarly journals Graphene-Based Semiconductor Heterostructures for Photodetectors

Micromachines ◽  
2018 ◽  
Vol 9 (7) ◽  
pp. 350 ◽  
Author(s):  
Dong Shin ◽  
Suk-Ho Choi
Keyword(s):  
Optical Properties ◽  
High Performance ◽  
Optoelectronic Devices ◽  
Semiconductor Heterostructures ◽  
Device Physics ◽  
Electrical And Optical Properties ◽  
Design Performance ◽  
Future Challenges ◽  
Transparent Conductive Electrodes

Graphene transparent conductive electrodes are highly attractive for photodetector (PD) applications due to their excellent electrical and optical properties. The emergence of graphene/semiconductor hybrid heterostructures provides a platform useful for fabricating high-performance optoelectronic devices, thereby overcoming the inherent limitations of graphene. Here, we review the studies of PDs based on graphene/semiconductor hybrid heterostructures, including device physics/design, performance, and process technologies for the optimization of PDs. In the last section, existing technologies and future challenges for PD applications of graphene/semiconductor hybrid heterostructures are discussed.

scholarly journals Ultrafast Charge Separation in Bilayer WS2/Graphene Heterostructure Revealed by Time- and Angle-Resolved Photoemission Spectroscopy

2021 ◽  
Vol 9 ◽  
Author(s):  
Razvan Krause ◽  
Mariana Chávez-Cervantes ◽  
Sven Aeschlimann ◽  
Stiven Forti ◽  
Filippo Fabbri ◽  
...  
Keyword(s):  
Charge Separation ◽  
Graphene Layer ◽  
Optoelectronic Devices ◽  
Visible Spectral Range ◽  
Band Alignment ◽  
Photoemission Spectroscopy ◽  
Type I ◽  
Type Ii ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Indirect Band Gap

Efficient light harvesting devices need to combine strong absorption in the visible spectral range with efficient ultrafast charge separation. These features commonly occur in novel ultimately thin van der Waals heterostructures with type II band alignment. Recently, ultrafast charge separation was also observed in monolayer WS2/graphene heterostructures with type I band alignment. Here we use time- and angle-resolved photoemission spectroscopy to show that ultrafast charge separation also occurs at the interface between bilayer WS2 and graphene indicating that the indirect band gap of bilayer WS2 does not affect the charge transfer to the graphene layer. The microscopic insights gained in the present study will turn out to be useful for the design of novel optoelectronic devices.

The strain induced type-II band re-alignment of blue phosphorus-GeX (X = C/H/Se) heterostructures

2020 ◽  
Vol 89 (1) ◽  
pp. 10103
Author(s):  
Honglin Li ◽  
Yuting Cui ◽  
Haijun Luo ◽  
Wanjun Li
Keyword(s):  
High Performance ◽  
Strain Range ◽  
Interlayer Coupling ◽  
Photovoltaic Cell ◽  
Catalytic Performance ◽  
Band Alignment ◽  
First Principles Calculation ◽  
Type Ii ◽  
2D Structure ◽  
Insight Into

Efforts to efficiently use of the next generation 2-dimension (2D) structured monolayers is getting a lot of attention for their excellent properties recently. In this work, we composite the blue phosphorus (BP) and monolayer GeX (X = C/H/Se) via van der Waals force (vdW) interaction to obtain well defined type-II band alignment heterostructures. A systematic theoretic study is conducted to explore the interlayer coupling effects and the bands re-alignment of BP-GeX (X = C/H/Se) heterostructure after the strain imposed. To devise usable and efficient materials to degrade pollutant or used as a potential photovoltaic cell material, previous researches have proved that using 2D materials as components is a feasible way to obtain high performance. Here, we prudently present a comprehensive investigation on the BP and GeX (X = C/H/Se) with different twisted angles via first-principles calculation to lay a theoretical framework on the band alignment and carriers' separation. It reveals that the intrinsic electronic properties of BP and GeX are roughly preserved in the corresponding heterostructures. Upon strain applied, band alignment can be flexibly manipulated by varying external imposed strain. The heterostructures can maintain type-II character within a certain strain range, and thus the carriers are spatially separated to different portions. This work not only provides a deep insight into the construction of the heterostructure, but presents a new possibility to search for a flexible and feasible approach to promote its catalytic performance. The corresponding results would provide meaningful guidelines for designing 2D structure based novel materials.

The electric field modulation of electronic properties in a type-II phosphorene/PbI2 van der Waals heterojunction

2019 ◽  
Vol 21 (15) ◽  
pp. 7765-7772 ◽  
Author(s):  
Yuting Wei ◽  
Fei Wang ◽  
Wenli Zhang ◽  
Xiuwen Zhang
Keyword(s):  
Solar Energy ◽  
Electric Field ◽  
Electronic Properties ◽  
External Electric Field ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Type Ii ◽  
Direct Bandgap ◽  
Field Modulation

The 0.52/0.83 eV direct bandgap of P/PbI2 possesses a type-II band alignment, can effectively be regulated to 0.90/1.54 eV using an external electric field in DFT/HSE06, and is useful for solar energy and optoelectronic devices.

A two-dimensional GeSe/SnSe heterostructure for high performance thin-film solar cells

2019 ◽  
Vol 7 (18) ◽  
pp. 11265-11271 ◽  
Author(s):  
Yuliang Mao ◽  
Congsheng Xu ◽  
Jianmei Yuan ◽  
Hongquan Zhao
Keyword(s):  
First Principles ◽  
High Performance ◽  
Band Alignment ◽  
Thin Film Solar Cells ◽  
Photoelectric Conversion Efficiency ◽  
Type Ii ◽  
First Principles Calculations ◽  
Photoelectric Conversion ◽  
Direct Band Gap ◽  
Direct Band

Based on first-principles calculations, we demonstrated that a GeSe/SnSe heterostructure has a type-II band alignment and a direct band gap. The predicted photoelectric conversion efficiency (PCE) for the GeSe/SnSe heterostructure reaches 21.47%.

Tunable electronic and optical properties of InSe/InTe van der Waals heterostructures toward optoelectronic applications

2018 ◽  
Vol 6 (27) ◽  
pp. 7201-7206 ◽  
Author(s):  
Jimin Shang ◽  
Longfei Pan ◽  
Xiaoting Wang ◽  
Jingbo Li ◽  
Hui-Xiong Deng ◽  
...  
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Normal Strain ◽  
Type Ii ◽  
Van Der Waals Heterostructures ◽  
Typical Type ◽  
Direct Band

2D InSe/InTe van der Waals heterostructures with a direct band structure and typical type-II band alignment, effectively tuned by applying normal strain, are systematically discussed for future optoelectronic devices.

scholarly journals High-Responsivity Photovoltaic Photodetectors Based on MoTe2/MoSe2 van der Waals Heterojunctions

Crystals ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 315 ◽  
Author(s):  
Hao Luo ◽  
Bolun Wang ◽  
Enze Wang ◽  
Xuewen Wang ◽  
Yufei Sun ◽  
...  
Keyword(s):  
High Efficiency ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Optoelectronic Devices ◽  
Type Ii ◽  
Zero Bias ◽  
High Responsivity ◽  
Metal Dichalcogenides ◽  
Self Powered ◽  
Ultrafast Charge Transfer

Van der Waals heterojunctions based on transition metal dichalcogenides (TMDs) show promising potential in optoelectronic devices, due to the ultrafast separation of photoexcited carriers and efficient generation of the photocurrent. Herein, this study demonstrated a high-responsivity photovoltaic photodetector based on a MoTe2/MoSe2 type-II heterojunction. Due to the interlayer built-in potential, the MoTe2/MoSe2 heterojunction shows obvious photovoltaic behavior and its photoresponse can be tuned by the gate voltage due to the ultrathin thickness of the heterojunction. This self-powered photovoltaic photodetector exhibits an excellent responsivity of 1.5 A W−1, larger than previously reported TMDs-based photovoltaic photodetectors. Due to the high-efficiency separation of electron-hole pairs and ultrafast charge transfer, the light-induced on/off ratio of current switching is larger than 104 at zero bias, and the dark current is extremely low (~10−13 A). These MoTe2/MoSe2 type-II heterojunctions are expected to provide more opportunities for future nanoscale optoelectronic devices.

Enhanced current rectification and self-powered photoresponse in multilayer p-MoTe2/n-MoS2 van der Waals heterojunctions

Nanoscale ◽  
2017 ◽  
Vol 9 (30) ◽  
pp. 10733-10740 ◽  
Author(s):  
Bin Wang ◽  
Shengxue Yang ◽  
Cong Wang ◽  
Minghui Wu ◽  
Li Huang ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Current Rectification ◽  
Self Powered

The vertically stacked MoTe2/MoS2 p–n heterojunctions have excellent electronic and optoelectronic characteristics with a type-II band alignment.

Interface engineering of a hierarchical ZnxCd1−xS architecture with favorable kinetics for high-performance solar water splitting

2021 ◽  
Vol 23 (15) ◽  
pp. 9347-9356
Author(s):  
Miaomiao Zhang ◽  
Xianqiang Chu ◽  
Hui Zhang ◽  
Fangzhi Huang ◽  
Pianpian Liu ◽  
...  
Keyword(s):  
Water Splitting ◽  
High Performance ◽  
Nanorod Array ◽  
Band Alignment ◽  
Type Ii ◽  
Interface Engineering ◽  
Solar Water ◽  
Solar Water Splitting ◽  
Binder Free

A hierarchical ZnxCd1−xS nanorod array with binder-free heterojunction interfaces and favorable type-II band alignment displays significantly enhanced photoactivity and stability.

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