Gate Drives generating EMI in the absence of Power Converter loading

This paper shows how a power converter can generate electromagnetic interference (EMI) through the operation of gate drives only - in the absence of any power conversion. This is due to parasitic capacitances connecting the power semiconductor’s gate to the main circuit. A half bridge converter is used to illustrate this concept. Practical measurements are compared to simulations for an energized and non-energized converter. Even without loading, a converter can exceed regulatory conducted emission EMI limits. This effect is important to consider during the design of converter EMI mitigation - especially for low power converters where the load current is not dominant.

Gate Drives generating EMI in the absence of Power Converter loading

This paper shows how a power converter can generate electromagnetic interference (EMI) through the operation of gate drives only - in the absence of any power conversion. This is due to parasitic capacitances connecting the power semiconductor’s gate to the main circuit. A half bridge converter is used to illustrate this concept. Practical measurements are compared to simulations for an energized and non-energized converter. Even without loading, a converter can exceed regulatory conducted emission EMI limits. This effect is important to consider during the design of converter EMI mitigation - especially for low power converters where the load current is not dominant.

Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

The significant advance of power electronics in today’s market is calling for high-performance power conversion systems and MEMS devices that can operate reliably in harsh environments, such as high working temperature. Silicon-carbide (SiC) power electronic devices are featured by the high junction temperature, low power losses, and excellent thermal stability, and thus are attractive to converters and MEMS devices applied in a high-temperature environment. This paper conducts an overview of high-temperature power electronics, with a focus on high-temperature converters and MEMS devices. The critical components, namely SiC power devices and modules, gate drives, and passive components, are introduced and comparatively analyzed regarding composition material, physical structure, and packaging technology. Then, the research and development directions of SiC-based high-temperature converters in the fields of motor drives, rectifier units, DC–DC converters are discussed, as well as MEMS devices. Finally, the existing technical challenges facing high-temperature power electronics are identified, including gate drives, current measurement, parameters matching between each component, and packaging technology.

Performance Analysis and control strategies of Cascaded Multilevel Converters

Multilevel inverters have been widely used for high-voltage and high-power applications. Their perf0rmance is greatly superi0r t0 that 0f c0nventi0nal tw0-level inverters due t0 their reduced t0tal harm0nic dist0rti0n (THD),. This t0p0l0gy requires fewer c0mp0nents when c0mpared t0 di0de clamped, flying capacit0r and Bridgeless cascaded inverters and it requires fewer carrier signals and gate drives. Theref0re, the 0verall c0st and circuit c0mplexity are greatly reduced. This paper presents a n0vel reference and multicarrier based PWM scheme It als0 c0mpares the perf0rmance 0f the pr0p0sed scheme with that 0f c0nventi0nal cascaded bridge less rectifier (CBR) multilevel inverters. finally Simulati0n results fr0m MATLAB/SIMULINK are presented t0 verify the perf0rmance 0f the Five-level Multilevel Inverter