scholarly journals Corrigendum: Photo-Diodes Based on CH3NH3PbCl3 Perovskite Single Crystals by Epitaxial Growth for Ultraviolet Photo-Detection

2021 ◽  
Vol 9 ◽  
Author(s):  
Jingda Zhao ◽  
Xin Wang ◽  
Yuzhu Pan ◽  
Yubing Xu ◽  
Yuwei Li ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Single Crystals ◽  
Photo Detection

scholarly journals Photo-Diodes Based on CH3NH3PbCl3 Perovskite Single Crystals by Epitaxial Growth for Ultraviolet Photo-Detection

2021 ◽  
Vol 9 ◽  
Author(s):  
Jingda Zhao ◽  
Xin Wang ◽  
Yuzhu Pan ◽  
Yubing Xu ◽  
Yuwei Li ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Single Crystals ◽  
Epitaxial Layer ◽  
Wide Band ◽  
Uv Detection ◽  
Single Crystal Substrate ◽  
Wide Band Gap ◽  
Crystal Substrate ◽  
Photo Detection

Organic-inorganic hybrid methylammonium lead halide perovskite MAPbX3 (where MA = CH3NH3, and X = Cl, Br, I) single crystals are potential semiconductors for photo-detection due to their excellent optoelectronic performance. In particular, MAPbCl3 single crystal is a wide-band-gap (2.9 eV) semiconductor which is suitable for ultraviolet (UV) detection. In this work, n−-n+ photo-diodes are fabricated through solution-processed epitaxial growth, growing Bi-doped MAPbCl3 epitaxial layer on MAPbCl3 single crystal substrate. The epitaxial layer effectively improves the interface between n−-type and n+-type layers and leads to low dark current. This work provides useful information for UV detection based on perovskites.

Crystallization of Intrinsic Amorphous Layers Produced by Stoichiometric Implantation of Al and O Ions in A-Axis Oriented Al2O3 Single Crystals

1989 ◽  
Vol 157 ◽  
Author(s):  
W. Zhou ◽  
D.X. Cao ◽  
D.K. Sood
Keyword(s):  
Free Surface ◽  
Epitaxial Growth ◽  
Single Crystals ◽  
Isothermal Annealing ◽  
Interface Velocity ◽  
Planar Interface ◽  
Rapid Crystallization ◽  
Substrate Orientation ◽  
Prolonged Annealing ◽  
Tentative Model

ABSTRACTIsothermal annealing behaviour of intrinsic amorphous layers produced by stoichiometric implantation in a—axis oriented α—Al2O3 single crystals has been studied. The amorphous phase transforms directly to α—Al2O3 at a well defined planar interface which moves towards the free surface. The epitaxial growth slows down after initial rapid crystallization, indicating two separate regimes. The interface velocity shows Arrhenius behaviour in both regimes with activation energies of 0.6 and 0.08 eV respectively. There is an evidence for additional surface or random crystallization into κ or γ-Al2O3 phases within the first few nm on the surface, after prolonged annealing. These results are remarkably different from those reported previously for c–axis oriented Al2O3 crystals, showing the importance of substrate orientation during crystallization. A tentative model to explain the crystallization behaviour is discussed.

AlN Substrates and Epitaxy Results

2010 ◽  
Vol 645-648 ◽  
pp. 1183-1186
Author(s):  
Yuri N. Makarov ◽  
T.Yu. Chemekova ◽  
O.V. Avdeev ◽  
N. Mokhov ◽  
S.S. Nagalyuk ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Single Crystals ◽  
Uv Light ◽  
Laser Diodes ◽  
Ultra Violet ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Light Emitting ◽  
Saw Devices ◽  
Bulk Single Crystals

AlN substrates are produced by Physical Vapor Transport (PVT) growth of AlN bulk single crystals followed by post growth processing of the crystals (calibration, slicing, lapping, and polishing). The AlN substrates are suitable for epitaxial growth. The substrates may be used for development of devices such as ultra violet (UV) light emitting diodes (LEDs) and laser diodes (LDs), Piezo-Electric Transducers, SAW devices, RF Transistors, etc.

Direct observation of the epitaxial growth of molecular layers on molecular single crystals

2006 ◽  
Vol 89 (26) ◽  
pp. 261905 ◽  
Author(s):  
A. Sassella ◽  
A. Borghesi ◽  
M. Campione ◽  
S. Tavazzi ◽  
C. Goletti ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Single Crystals ◽  
Direct Observation ◽  
Molecular Layers

Role of Cadmium on Epitaxial Growth of PbSe on InP Single Crystals

2003 ◽  
Vol 150 (2) ◽  
pp. C89 ◽  
Author(s):  
M. Froment ◽  
L. Beaunier ◽  
H. Cachet ◽  
A. Etcheberry
Keyword(s):  
Epitaxial Growth ◽  
Single Crystals

Epitaxial growth of Mg2 Si films on strontium titanate single crystals

2013 ◽  
Vol 10 (12) ◽  
pp. 1688-1691 ◽  
Author(s):  
Kensuke Akiyama ◽  
Atsuo Katagiri ◽  
Shota Ogawa ◽  
Masaaki Matsushima ◽  
Hiroshi Funakubo
Keyword(s):  
Epitaxial Growth ◽  
Single Crystals ◽  
Strontium Titanate ◽  
Si Films
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