scholarly journals High Temperature Electrical Properties of Co-Substituted La4BaCu5O13+δ Thin Films Fabricated by Sputtering Method

Materials ◽  
2021 ◽  
Vol 14 (10) ◽  
pp. 2685
Author(s):  
Woosuck Shin ◽  
Akihiro Tsuruta ◽  
Toshio Itoh ◽  
Takafumi Akamatsu ◽  
Ichiro Terasaki
Keyword(s):  
High Temperature ◽  
Rf Sputtering ◽  
Annealing Process ◽  
Si Substrate ◽  
Carrier Generation ◽  
Cation Site ◽  
Temperature Conductivity ◽  
Sputtering Deposition ◽  
Post Annealing ◽  
Metallic Conduction

The high-temperature conductivity of the perovskite oxides of a La4BaCu5O13+δ (LBCO) thin film prepared by RF sputtering deposition and thermal annealing has been studied. While the bulk LBCO compound was metallic, the LBCO film deposited on a Si substrate by sputtering and a post annealing process showed semiconductor-like conduction, which is considered to be due to the defects and poor grain connectivity in the LBCO film on the Si substrate. The LBCO film deposited on a SrTiO3 substrate was of high film quality and showed metallic conduction. When the cation site Cu was substituted by Co, the electrical conductivity of the LBCO film increased further and its temperature dependence became smaller. The transport properties of LBCO films are investigated to understand its carrier generation mechanism.

Cu/MoS2/ITO based hybrid structure for catalysis of hydrazine oxidation

RSC Advances ◽  
2015 ◽  
Vol 5 (20) ◽  
pp. 15374-15378 ◽  
Author(s):  
Sajjad Hussain ◽  
Kamran Akbar ◽  
Dhanasekaran Vikraman ◽  
Muhmmad Arslan Shehzad ◽  
Seunho Jung ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Rf Sputtering ◽  
Hybrid Structure ◽  
Annealing Process ◽  
Large Area ◽  
Post Annealing ◽  
Hydrazine Oxidation

We have successfully demonstrated large-area and continuous MoS2 films grown on indium tin oxide (ITO) substrates by RF sputtering followed by a post-annealing process.

scholarly journals Synthesis of high-performance magnetic garnet materials and garnet-bismuth oxide nanocomposites using physical vapor deposition followed by high-temperature crystallization

2011 ◽  
Vol 83 (11) ◽  
pp. 1971-1980 ◽  
Author(s):  
Mohammad Nur-E-Alam ◽  
Mikhail Vasiliev ◽  
Kamal Alameh ◽  
Viacheslav Kotov
Keyword(s):  
High Temperature ◽  
Optical Sensors ◽  
Physical Vapor Deposition ◽  
High Performance ◽  
Near Infrared ◽  
Rf Sputtering ◽  
Nanocomposite Films ◽  
Sputtering Deposition ◽  
Garnet Phase ◽  
Iron Garnet

Bi-substituted iron garnet (Bi:IG) compounds synthesized in thin film form are the best semi-transparent magneto-optical (MO) materials for applications in magnetic recording, optical sensors, and photonics. These materials can possess attractive magnetic properties and the highest specific Faraday rotation in the visible and near-infrared spectral regions, if the deposited layers contain a high volumetric fraction of the garnet phase and possess high-quality surfaces and microstructure. In this paper, we study the effects of various deposition and annealing process parameters on the properties of Bi:IG and garnet-oxide nanocomposite films of several composition types fabricated using radio-frequency (RF) sputtering deposition followed by high-temperature isothermal crystallization. We also investigate the kinetics of garnet phase formation within a garnet-Bi-oxide nanocomposite material.

Preparation of (Bi, Pb)-2223/Ag tapes by high temperature sintering and post-annealing process

2002 ◽  
Vol 372-376 ◽  
pp. 608-611 ◽  
Author(s):  
L Hua ◽  
J.C Grivel ◽  
L Gottschalck Andersen ◽  
T Tschentscher ◽  
W.G Wang ◽  
...  
Keyword(s):  
High Temperature ◽  
Annealing Process ◽  
Post Annealing

The Influence of Chemical Alloying on the High Temperature Wear Resistance of H-Free DLC Coatings

2006 ◽  
Vol 15-17 ◽  
pp. 1026-1031
Author(s):  
Damiano Galvan ◽  
Y.T. Pei ◽  
Jeff T.M. de Hosson ◽  
Albano Cavaleiro
Keyword(s):  
High Temperature ◽  
Friction Coefficient ◽  
Sliding Friction ◽  
Rf Sputtering ◽  
Columnar Structure ◽  
Alloying Elements ◽  
Sudden Increase ◽  
Plan View ◽  
Dlc Coatings ◽  
Sputtering Deposition

A commercial RF-sputtering deposition rig was employed to deposit H-free diamond-like carbon (DLC) coatings. The influence of alloying elements such as Ti and Si on the structure, mechanical and tribological properties of the coatings was investigated. The coating was observed in cross section and in plan view with SEM, TEM and AFM. Because of the highly-ionized plasma generated by the RF-powered glow discharge, ion bombardment suppresses the formation of a columnar structure regardless of the composition of the coatings. The method produces featureless microstructures and smooth surfaces. TEM investigations confirm that no crystalline phases form in the coatings regardless of the presence of considerable concentrations of Ti and Si. Tribological tests were performed with a high-temperature tribometer in a ball-on-disk configuration, using coated disks and different materials for the ball countepart. At ambient T the sliding friction coefficient decreases as the concentration of alloying elements increases. Nevertheless, high-T tribotests with a constant thermal load showed that the presence of alloying elements decreases the thermal stability of the coatings. For each coating a temperature exists above which a sudden increase of friction coefficient is observed, with subsequent detachment and failure of the coatings. The mechanism of disruption of the self-lubrication effects is identified and the influence of the alloying elements on the thermal degradation of tribological performance of the coatings is discussed.

scholarly journals Considerable Enhancement of Field Emission of SnO2 Nanowires by Post-Annealing Process in Oxygen at High Temperature

2009 ◽  
Vol 4 (10) ◽  
pp. 1135-1140 ◽  
Author(s):  
J. B. Wang ◽  
K. Li ◽  
X. L. Zhong ◽  
Y. C. Zhou ◽  
X. S. Fang ◽  
...  
Keyword(s):  
High Temperature ◽  
Field Emission ◽  
Annealing Process ◽  
Post Annealing ◽  
Sno2 Nanowires ◽  
Considerable Enhancement

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

Titania Based Nano-ionic Memristive Crossbar Arrays: Fabrication and Resistive Switching Characteristics

2019 ◽  
Vol 9 (4) ◽  
pp. 486-493 ◽  
Author(s):  
S. Sahoo ◽  
P. Manoravi ◽  
S.R.S. Prabaharan
Keyword(s):  
Resistive Switching ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Hysteresis Curve ◽  
Bipolar Switching ◽  
Post Annealing ◽  
Endurance Tests ◽  
Bilayer Device ◽  
Switching Characteristics ◽  
Pinched Hysteresis

Introduction: Intrinsic resistive switching properties of Pt/TiO2-x/TiO2/Pt crossbar memory array has been examined using the crossbar (4×4) arrays fabricated by using DC/RF sputtering under specific conditions at room temperature. Materials and Methods: The growth of filament is envisaged from bottom electrode (BE) towards the top electrode (TE) by forming conducting nano-filaments across TiO2/TiO2-x bilayer stack. Non-linear pinched hysteresis curve (a signature of memristor) is evident from I-V plot measured using Pt/TiO2-x /TiO2/Pt bilayer device (a single cell amongst the 4×4 array is used). It is found that the observed I-V profile shows two distinguishable regions of switching symmetrically in both SET and RESET cycle. Distinguishable potential profiles are evident from I-V curve; in which region-1 relates to the electroformation prior to switching and region-2 shows the switching to ON state (LRS). It is observed that upon reversing the polarity, bipolar switching (set and reset) is evident from the facile symmetric pinched hysteresis profile. Obtaining such a facile switching is attributed to the desired composition of Titania layers i.e. the rutile TiO2 (stoichiometric) as the first layer obtained via controlled post annealing (650oC/1h) process onto which TiO2-x (anatase) is formed (350oC/1h). Results: These controlled processes adapted during the fabrication step help manipulate the desired potential barrier between metal (Pt) and TiO2 interface. Interestingly, this controlled process variation is found to be crucial for measuring the switching characteristics expected in Titania based memristor. In order to ensure the formation of rutile and anatase phases, XPS, XRD and HRSEM analyses have been carried out. Conclusion: Finally, the reliability of bilayer memristive structure is investigated by monitoring the retention (104 s) and endurance tests which ensured the reproducibility over 10,000 cycles.

Tuning the pinning direction of giant magnetoresistive sensor by post annealing process

2021 ◽  
Vol 64 (6) ◽  
Author(s):  
Zhiqiang Cao ◽  
Yiming Wei ◽  
Wenjing Chen ◽  
Shaohua Yan ◽  
Lin Lin ◽  
...  
Keyword(s):  
Annealing Process ◽  
Magnetoresistive Sensor ◽  
Post Annealing

scholarly journals Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1802
Author(s):  
Dan Liu ◽  
Peng Shi ◽  
Yantao Liu ◽  
Yijun Zhang ◽  
Bian Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Maximum Size ◽  
Cross Sectional ◽  
Post Annealing ◽  
Maximum Conductivity ◽  
Different Temperatures ◽  
Post Annealing Temperature

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.

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